公开(公告)号：US08035292B2

公开(公告)日：2011-10-11

申请号：US12882041

申请日：2010-09-14

申请人： Hyeong-Suk Yoo ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-Il Park ,  Sung-Lak Choi

发明人： Hyeong-Suk Yoo ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-Il Park ,  Sung-Lak Choi

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： G02F1/133617 ,  G02F1/133602

摘要： A planar light source device includes a lower substrate, a cathode electrode a carbon nanotube, an upper substrate, a fluorescent layer, and an anode electrode. The cathode electrode is on the lower substrate. The carbon nanotube is electrically connected to the cathode electrode. The upper substrate faces the lower substrate. The fluorescent layer and the anode electrode are formed on the upper substrate. Therefore, the planar light source device generates light without using mercury.

摘要翻译： 平面光源装置包括下基板，阴极电极，碳纳​​米管，上基板，荧光层和阳极电极。 阴极位于下基板上。 碳纳米管与阴极电连接。 上基板面向下基板。 荧光层和阳极电极形成在上基板上。 因此，平面光源装置在不使用汞的情况下产生光。

公开(公告)号：US20100328582A1

公开(公告)日：2010-12-30

申请号：US12882041

申请日：2010-09-14

申请人： Hyeong-Suk YOO ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-II Park ,  Sung-Lak Choi

发明人： Hyeong-Suk YOO ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-II Park ,  Sung-Lak Choi

IPC分类号： G02F1/13357 ,  H01J1/62

CPC分类号： G02F1/133617 ,  G02F1/133602

摘要： A planar light source device includes a lower substrate, a cathode electrode a carbon nanotube, an upper substrate, a fluorescent layer, and an anode electrode. The cathode electrode is on the lower substrate. The carbon nanotube is electrically connected to the cathode electrode. The upper substrate faces the lower substrate. The fluorescent layer and the anode electrode are formed on the upper substrate. Therefore, the planar light source device generates light without using mercury.

摘要翻译： 平面光源装置包括下基板，阴极电极，碳纳​​米管，上基板，荧光层和阳极电极。 阴极位于下基板上。 碳纳米管与阴极电连接。 上基板面向下基板。 荧光层和阳极电极形成在上基板上。 因此，平面光源装置在不使用汞的情况下产生光。

公开(公告)号：US20070040960A1

公开(公告)日：2007-02-22

申请号：US11479615

申请日：2006-06-30

申请人： Hyeong-Suk Yoo ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-Il Park ,  Sung-Lak Choi

发明人： Hyeong-Suk Yoo ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-Il Park ,  Sung-Lak Choi

IPC分类号： G02F1/1335

CPC分类号： G02F1/133617 ,  G02F1/133602

摘要： A planar light source device includes a lower substrate, a cathode electrode a carbon nanotube, an upper substrate, a fluorescent layer, and an anode electrode. The cathode electrode is on the lower substrate. The carbon nanotube is electrically connected to the cathode electrode. The upper substrate faces the lower substrate. The fluorescent layer and the anode electrode are formed on the upper substrate. Therefore, the planar light source device generates light without using mercury.

摘要翻译： 平面光源装置包括下基板，阴极电极，碳纳​​米管，上基板，荧光层和阳极电极。 阴极位于下基板上。 碳纳米管与阴极电连接。 上基板面向下基板。 荧光层和阳极电极形成在上基板上。 因此，平面光源装置在不使用汞的情况下产生光。

公开(公告)号：US06727121B2

公开(公告)日：2004-04-27

申请号：US10053277

申请日：2002-01-18

申请人： Seung Ki Joo ,  Seok-Woon Lee

发明人： Seung Ki Joo ,  Seok-Woon Lee

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/2022 ,  H01L29/66772 ,  H01L29/78609 ,  H01L29/78654

摘要： The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

摘要翻译： 本发明涉及利用晶体滤波技术使薄膜晶体管的有源层结晶的方法。 根据传统的金属诱导横向结晶（MILC）方法，非晶硅层可以结晶成多晶硅层。 根据本发明的晶体滤波技术，非晶硅层可以通过由MILC结晶化的多晶区域过滤单晶成分而进行单晶化。 与包括通过常规方法制成的多晶硅有源层的TFT相比，根据本方法结晶的包括活性层的TFT具有显着改善的电特性，例如电子迁移率和漏电流。 本发明还提供了应用晶体滤波技术的各种TFT制造方法。

公开(公告)号：US06692996B2

公开(公告)日：2004-02-17

申请号：US09826438

申请日：2001-04-04

申请人： Seok Woon Lee ,  Seung Ki Joo

发明人： Seok Woon Lee ,  Seung Ki Joo

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

摘要： The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

摘要翻译： 本发明涉及利用晶体滤波技术使薄膜晶体管的有源层结晶的方法。 根据传统的金属诱导横向结晶（MILC）方法，非晶硅层可以结晶成多晶硅层。 根据本发明的晶体滤波技术，非晶硅层可以通过从MILC结晶的多晶区域中过滤单晶成分而进行单晶化。 与包括通过常规方法制成的多晶硅有源层的TFT相比，根据本方法结晶的包括活性层的TFT具有显着改善的电特性，例如电子迁移率和漏电流。 本发明还提供了应用晶体滤波技术的各种TFT制造方法。

公开(公告)号：US06586287B2

公开(公告)日：2003-07-01

申请号：US10113351

申请日：2002-04-01

申请人： Seung Ki Joo ,  Seok-Woon Lee

发明人： Seung Ki Joo ,  Seok-Woon Lee

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.

公开(公告)号：US20030102478A1

公开(公告)日：2003-06-05

申请号：US10286397

申请日：2002-11-01

申请人： Seung Ki Joo

发明人： Seung Ki Joo ,  Seok-Woon Lee

IPC分类号： H01L029/04

CPC分类号： H01L27/1277 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78621

摘要： The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a storage capacitor in the pixel region of a display panel using MILC phenomena. By applying MILC inducing metal along at least two edges of storage capacitor, the time required to crystallize the silicon layer in storage capacitor region may be significantly reduced.

摘要翻译： 本发明涉及在诸如LCD或OELD的显示面板的像素区域中使用的存储电容器的结构和制造方法。 本发明使用MILC现象在显示面板的像素区域中同时形成多晶硅TFT和存储电容器。 通过沿着存储电容器的至少两个边沿应用MILC诱导金属，可以显着地减少在存储电容器区域中结晶硅层所需的时间。

公开(公告)号：US06511871B2

公开(公告)日：2003-01-28

申请号：US09794770

申请日：2001-02-28

申请人： Seung-Ki Joo ,  Tae-Kyung Kim

发明人： Seung-Ki Joo ,  Tae-Kyung Kim

IPC分类号： H01L2100

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78675

摘要： The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.

摘要翻译： 本发明涉及一种制造薄膜晶体管的方法，其中由金属诱导横向晶化产生的金属硅化物线位于沟道区的外部。 本发明包括在衬底上形成半导体层的步骤，其中半导体层依次具有第一区域，沟道区域和第二区域，在沟道区域上形成栅极绝缘层/栅电极，掺杂第一 并且第二区域大量杂质，形成使第一区域成为金属偏移的金属膜图案，并且通过对具有金属膜的半导体层进行热处理使半导体层结晶。

公开(公告)号：US10971732B2

公开(公告)日：2021-04-06

申请号：US16238957

申请日：2019-01-03

申请人： Seung-ki Joo

发明人： Seung-ki Joo

IPC分类号： H01M4/80 ,  H01M10/052 ,  H01M4/38 ,  H01M4/66 ,  H01M4/02

摘要： Provided is a lithium negative electrode having metal foam capable of significantly improving the safety and reliability of a lithium secondary battery by suppressing volume expansion and consumption of a lithium material due to charge/discharge repetition of the lithium secondary battery, and a lithium secondary battery using the lithium negative electrode. The negative electrode for a lithium secondary battery includes: a negative electrode current collector made of metal foam having a plurality of pores whose inner portions are empty; and a lithium thin film attached to a rear surface of the electrode current collector.

公开(公告)号：US10707520B2

公开(公告)日：2020-07-07

申请号：US16121922

申请日：2018-09-05

申请人： Seung-ki Joo

发明人： Seung-ki Joo

IPC分类号： H01M10/00 ,  H01M10/0525 ,  H01M4/46 ,  H01M4/40 ,  H01M4/32 ,  H01M10/04 ,  H01M4/04 ,  H01M4/133 ,  H01M4/1393 ,  H01M4/136 ,  H01M4/80 ,  H01M4/505 ,  H01M4/1395 ,  H01M4/1397 ,  H01M4/1391 ,  H01M4/58 ,  H01M4/131 ,  H01M4/134 ,  H01M4/485 ,  H01M4/66 ,  H01M4/62 ,  H01M4/02

摘要： Provided is a method of manufacturing a lithium secondary battery, the method including: preparing positive and negative metal foams having a plurality of first pores; controlling first pore sizes of the metal foams depending on an application; filling the first pores with a slurry obtained by mixing a positive electrode active material or a negative electrode active material, a binder, a conductive material, and an organic solvent; heat-treating the metal foams to form second pores having a size smaller than those of the first pores. The first pore size of the metal foam can be controlled, so that a high capacity and high output battery can be manufactured depending on the usage.