公开(公告)号：US6053975A

公开(公告)日：2000-04-25

申请号：US39830

申请日：1998-03-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10T117/1072

摘要： In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.

摘要翻译： 在晶体保持装置中，晶种与单晶的直圆柱形部分之间的波纹状部分通过在晶体与材料熔体接触的单晶生长过程中保持提升夹具的部分来保持，随后 在旋转时拉动。 在晶体保持装置中，在提升夹具的每个保持部分的末端安装有用于与晶体的波纹部分建立表面接触的附接构件。 因此，可以可靠地保持单晶，从而可以防止在牵引操作期间单晶的断裂和下降。

公开(公告)号：US5976246A

公开(公告)日：1999-11-02

申请号：US952481

申请日：1997-11-19

申请人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  C30B29/36 ,  Y10S117/917

摘要： A MCZ method in which the single crystal is pulled while being rotated under the conditions where the crystal growth rate V.sub.1 (mm/min) and the crystal circumference velocity V.sub.2 (mm/min) satisfy the following relationships:0.4.ltoreq.V.sub.10.628.times.10.sup.4 .ltoreq.V.sub.2 .ltoreq.1.0.times.10.sup.4andV.sub.2 .ltoreq.-3.72.times.10.sup.4 V.sub.1 +4.35.times.10.sup.4It is possible to manufacture a silicon single crystal with a large diameter with the MCZ method without causing distortion.

摘要翻译： PCT No.PCT / JP97 / 00993 Sec。 371日期：1997年11月19日 102（e）1997年11月19日PCT PCT 1997年3月27日PCT公布。 第WO97 / 36025号公报 日期1997年10月2日在晶体生长速度V1（mm / min）和晶体圆周速度V2（mm / min）满足以下关系的条件下旋转单晶的MCZ法： /=V10.628x104

公开(公告)号：US5968266A

公开(公告)日：1999-10-19

申请号：US822088

申请日：1997-03-20

申请人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B33/04 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/14 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1088

摘要： An apparatus for manufacturing a single crystal of silicon includes a crucible, a heater, electrodes, and a magnet. In addition to a plurality of heat generating portions and two main electrode portions, the heater has two or more auxiliary electrode portions. Two or more heater support members having an insulating property are further provided so as to support the heater through the auxiliary electrode portions. The number of heat generating portions which may be present between a heater support member and an electrode and between heater support members if adjacent to each other is equal to or less than 4. Each generating portion of the heater has a thickness of 25 mm or more. This structure makes it possible to produce a single crystal of silicon without causing breakage of a heater, even if a large electric current flows through the heater, even if a magnetic field of a high intensity is applied to a silicon melt in the crucible, and even if the heater has a large diameter.

摘要翻译： 用于制造单晶硅的装置包括坩埚，加热器，电极和磁体。 除了多个发热部和两个主电极部之外，加热器还具有两个以上的辅助电极部。 进一步提供具有绝缘性能的两个或更多个加热器支撑构件，以便通过辅助电极部分支撑加热器。 可以存在于加热器支撑构件和电极之间以及加热器支撑构件之间的彼此相邻的发热部分的数量等于或小于4.加热器的每个产生部分的厚度为25mm以上 。 即使在坩埚中的硅熔体上施加高强度的磁场，即使大的电流流过加热器，也能够制造单晶硅，而不会导致加热器的断裂，并且 即使加热器具有大的直径。

公开(公告)号：US5968264A

公开(公告)日：1999-10-19

申请号：US109530

申请日：1998-07-02

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US5948164A

公开(公告)日：1999-09-07

申请号：US140288

申请日：1998-08-25

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/32 ,  C30B29/06 ,  D04H1/4209 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/32 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1072

摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

摘要翻译： 用于根据切克劳斯基方法操作的晶体拉制装置中的晶种保持架。 在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切口表面与保持器的插入物的接触表面之间设置耐热缓冲材料。 耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。

公开(公告)号：US5871578A

公开(公告)日：1999-02-16

申请号：US915397

申请日：1997-08-20

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/24 ,  C30B15/30 ,  C30B29/06 ,  C30B33/04 ,  H01L21/208 ,  C30B15/32

CPC分类号： C30B15/30 ,  C30B15/305 ,  Y10S117/917

摘要： Oscillation of a growing crystal is suppressed in a Czochralski method when part of the growing crystal is mechanically held. Methods for holding and pulling a single crystal in a Czochralski method, wherein a seed crystal is pulled while rotating after the seed crystal is contacted with a raw material melt, part of the growing single crystal is mechanically held during pulling and the single crystal of heavy weight can be pulled regardless of mechanical strengths of the seed crystal or a neck portion thereof, wherein the raw material melt is under application of a magnetic field thereto when the growing crystal is mechanically held.

摘要翻译： 当生长晶体的一部分被机械保持时，生长晶体的振荡被抑制在切克劳斯基法（Czochralski method）中。 用Czochralski方法保持和拉取单晶的方法，其中在晶种与原料熔体接触之后，旋转时拉晶晶体，部分生长的单晶在拉伸期间被机械地保持，并且重结晶的单晶 无论种子晶体或其颈部的机械强度如何，均可以拉伸重量，其中当机械保持生长的晶体时，原料熔体施加磁场。

公开(公告)号：US06197109B1

公开(公告)日：2001-03-06

申请号：US09329615

申请日：1999-06-10

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Wataru Kusaki ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Wataru Kusaki ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/203

摘要： There is disclosed a method for producing a silicon single crystal by growing the silicon single crystal by the Czochralski method, characterized in that the crystal is pulled at a pulling rate [mm/min] within a range of from V1 to V1+0.062×G while the crystal is doped with nitrogen during the growing, where G [K/mm] represents an average temperature gradient along the crystal growing direction, which is for a temperature range of from the melting point of silicon to 1400° C., and provided in an apparatus used for the crystal growing, and V1 [mm/min] represents a pulling rate at which an OSF ring disappears at the center of the crystal when the crystal is pulled by gradually decreasing the pulling rate. The method of the present invention can produce silicon single crystal wafers exhibiting an extremely low defect density over the entire plane of the crystal, in particular, with no small pits, and having an excellent oxide dielectric breakdown voltage, based on the CZ method under widely and easily controllable production conditions at a high production rate and high productivity.

摘要翻译： 公开了通过使用Czochralski法生长硅单晶来制造单晶的方法，其特征在于，以V1至V1 + 0.062×G的范围内的拉伸速度[mm / min]拉伸晶体，同时 晶体在生长期间掺杂有氮，其中G [K / mm]表示沿着晶体生长方向的平均温度梯度，其处于从硅熔点至1400℃的温度范围内，并且设置在 用于晶体生长的装置，V1 [mm / min]表示当通过逐渐降低拉伸速率拉动晶体时OSF环在晶体的中心消失的拉伸速率。 本发明的方法可以在广泛的CZ方法的基础上生产出在整个晶体平面上显示出非常低的缺陷密度的硅单晶晶片，特别是没有小凹坑，并且具有优异的氧化物介电击穿电压 并且以高生产率和高生产率容易控制生产条件。

公开(公告)号：US6120598A

公开(公告)日：2000-09-19

申请号：US459849

申请日：1999-12-13

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  C30B15/08

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

摘要翻译： 根据切克劳斯斯基方法生长单晶，使得通过1150-1080℃的温度区的时间为20分钟或更短，或者使得单晶的一部分的长度对应于温度 1150-1080℃的区域的温度分布为2.0cm以下。 或者，单晶生长使得通过1250-1200℃的温度区的时间为20分钟或更短，或者使得对应于1250℃的温度区的单晶的一部分的长度， 1200℃，温度分布为2.0cm以下。 该方法既降低FPD（100个缺陷/ cm 2以下），LSTD，COP（10个缺陷/ cm 2以下）等所谓的内置缺陷的密度和尺寸，能够有效地制造具有 在氧化物绝缘击穿电压特性方面，极好的芯片产量（80％以上）优异。

公开(公告)号：US06077343A

公开(公告)日：2000-06-20

申请号：US318055

申请日：1999-05-25

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/02 ,  C30B15/00 ,  C20B25/02

CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm.sup.2 /.degree. C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 从晶体中心的径向距离D（mm）和纵轴表示F / G（mm 2 /℃×min）的值，其中F是单晶的拉伸速率（mm / min），G 是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（DEG C./mm）。可以提供一种由N形成的硅单晶晶片的制造方法 在通过CZ法在晶体的整个表面中不存在富V区和富I区的条件下，可以在宽范围，高收率，高生产率下容易地控制的条件下进行。

公开(公告)号：US6048395A

公开(公告)日：2000-04-11

申请号：US197130

申请日：1998-11-20

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N.sub.2 (V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N.sub.1 (V) and N.sub.2 (V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm.sup.2 /.degree.C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G值（mm2 /℃×min），其中F是单晶的拉伸速率（mm / min），G是沿着拉伸的平均晶体内梯度（DEG C./mm） 在硅熔点的温度范围内的方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀引起的吸杂能力 整个晶圆表面，硅单面 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开而没有出现OSF环的晶体晶片。