公开(公告)号：US06197109B1

公开(公告)日：2001-03-06

申请号：US09329615

申请日：1999-06-10

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Wataru Kusaki ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Wataru Kusaki ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/203

摘要： There is disclosed a method for producing a silicon single crystal by growing the silicon single crystal by the Czochralski method, characterized in that the crystal is pulled at a pulling rate [mm/min] within a range of from V1 to V1+0.062×G while the crystal is doped with nitrogen during the growing, where G [K/mm] represents an average temperature gradient along the crystal growing direction, which is for a temperature range of from the melting point of silicon to 1400° C., and provided in an apparatus used for the crystal growing, and V1 [mm/min] represents a pulling rate at which an OSF ring disappears at the center of the crystal when the crystal is pulled by gradually decreasing the pulling rate. The method of the present invention can produce silicon single crystal wafers exhibiting an extremely low defect density over the entire plane of the crystal, in particular, with no small pits, and having an excellent oxide dielectric breakdown voltage, based on the CZ method under widely and easily controllable production conditions at a high production rate and high productivity.

摘要翻译： 公开了通过使用Czochralski法生长硅单晶来制造单晶的方法，其特征在于，以V1至V1 + 0.062×G的范围内的拉伸速度[mm / min]拉伸晶体，同时 晶体在生长期间掺杂有氮，其中G [K / mm]表示沿着晶体生长方向的平均温度梯度，其处于从硅熔点至1400℃的温度范围内，并且设置在 用于晶体生长的装置，V1 [mm / min]表示当通过逐渐降低拉伸速率拉动晶体时OSF环在晶体的中心消失的拉伸速率。 本发明的方法可以在广泛的CZ方法的基础上生产出在整个晶体平面上显示出非常低的缺陷密度的硅单晶晶片，特别是没有小凹坑，并且具有优异的氧化物介电击穿电压 并且以高生产率和高生产率容易控制生产条件。

公开(公告)号：US06261361B1

公开(公告)日：2001-07-17

申请号：US09577252

申请日：2000-05-19

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient(° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 距离晶体中心的径向距离D（mm）和纵轴表示F / G（mm2 /℃·min）的值，其中F是单晶的拉伸速率（mm / min），以及 G是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（℃/ mm）。可以提供一种制造硅单晶晶片的方法，该硅单晶晶片由 通过CZ法在可以容易地在大范围，高收率，高生产率下容易地控制的条件下，通过CZ法在晶体的整个表面中不存在富V区和富I区的N区。

公开(公告)号：US06077343A

公开(公告)日：2000-06-20

申请号：US318055

申请日：1999-05-25

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/02 ,  C30B15/00 ,  C20B25/02

CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm.sup.2 /.degree. C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 从晶体中心的径向距离D（mm）和纵轴表示F / G（mm 2 /℃×min）的值，其中F是单晶的拉伸速率（mm / min），G 是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（DEG C./mm）。可以提供一种由N形成的硅单晶晶片的制造方法 在通过CZ法在晶体的整个表面中不存在富V区和富I区的条件下，可以在宽范围，高收率，高生产率下容易地控制的条件下进行。

公开(公告)号：US06191009B1

公开(公告)日：2001-02-20

申请号：US09264514

申请日：1999-03-08

申请人： Masaro Tamatsuka ,  Makoto Iida ,  Norihiro Kobayashi

发明人： Masaro Tamatsuka ,  Makoto Iida ,  Norihiro Kobayashi

IPC分类号： H01L21322

CPC分类号： C30B15/00 ,  C30B29/06 ,  C30B33/02

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal ingot in which nitrogen is doped is grown by a Czochralski method, sliced to provide a silicon single crystal wafer, and then subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer. According to a further method, a silicon single crystal ingot is grown in which nitrogen is doped by a Czochralski method, with controlling nitrogen concentration, oxygen concentration and cooling rate, and then the silicon single crystal ingot is sliced to provide a wafer. A silicon single crystal wafer is obtained by slicing a silicon single crystal ingot grown by a Czochralski method with doping nitrogen, wherein the depth of a denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 &mgr;m, and the bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1×108 to 2×1010 number/cm3. A CZ silicon wafer is provided, wherein generation of crystal defects on the surface of the wafer, and oxygen precipitation, is accelerated in the bulk portion of the wafer. The controllable range of the depth of the denuded zone and the bulk micro-defect density can be enlarged.

摘要翻译： 在制造硅单晶晶片的方法中，通过切克拉斯基法生长氮掺杂的硅单晶锭，切片以提供硅单晶晶片，然后对其进行热扩散氮 晶片表面。 根据另外的方法，通过切克拉斯基法，通过控制氮浓度，氧浓度和冷却速度，生长氮掺杂的硅单晶锭，然后将硅单晶锭切片以提供晶片。 通过用掺杂氮气切片通过切克劳斯基法生长的硅单晶锭获得硅单晶晶片，其中吸杂热处理或器件制造热处理后的裸露区的深度为2〜12μm， 吸气热处理或器件制造热处理后的缺陷密度为1×10 8〜2×10 10个/ cm 3。 提供了一种CZ硅晶片，其中晶片表面上的晶体缺陷的产生和氧沉淀在晶片的主体部分被加速。 可以扩大裸露区域的深度的可控范围和体积微缺陷密度。

公开(公告)号：US06841450B2

公开(公告)日：2005-01-11

申请号：US10130431

申请日：2001-09-18

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Makoto Iida

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Makoto Iida

IPC分类号： B60R1/06 ,  B01J35/02 ,  B60J1/00 ,  C03C17/34 ,  C09K3/18 ,  H01L21/304 ,  H01L21/324 ,  H01L21/336

CPC分类号： H01L21/324

摘要： The present invention provides an annealed wafer manufacturing method using a heat treatment method causing no change in resistivity of a wafer surface even when a silicon wafer having boron deposited on a surface thereof from an environment is subjected to heat treatment in an insert gas atmosphere and enabling the heat treatment in an ordinary diffusion furnace not requiring a sealed structure for increasing airtightness nor any specific facility such as explosion-proof facility. The present invention also provides an annealed wafer in which a boron concentration in the vicinity of a surface thereof is constant and crystal defects are annihilated. In the annealed wafer manufacturing method, a silicon wafer having a natural oxide film formed on a surface thereof with boron deposited thereon from an environment is subjected to heat treatment in an atmosphere containing hydrogen gas to remove the deposited boron before the natural oxide film is removed, and then is subjected to heat treatment in an inert gas atmosphere.

摘要翻译： 本发明提供一种退火晶片的制造方法，其使用不会改变晶片表面的电阻率的热处理方法，即使当在其表面上沉积硼的硅晶片在嵌入气体气氛中进行热处理时， 在不需要用于增加气密性的密封结构的普通扩散炉中的热处理以及防爆设施等具体设施。 本发明还提供一种其表面附近的硼浓度恒定并且结晶缺陷被消除的退火晶片。 在退火的晶片制造方法中，将具有在其表面上形成有自然氧化物膜的硅晶片从环境沉积在其上的硅晶片在包含氢气的气氛中进行热处理，以在去除天然氧化物膜之前去除沉积的硼 然后在惰性气体气氛中进行热处理。

公开(公告)号：US07326658B2

公开(公告)日：2008-02-05

申请号：US10333771

申请日：2002-05-22

申请人： Makoto Iida ,  Masaro Tamatsuka

发明人： Makoto Iida ,  Masaro Tamatsuka

IPC分类号： H01L21/324 ,  H01L21/477 ,  H01L21/42 ,  H01L21/26

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is subjected to a high temperature heat treatment at 1100° C. to 1350° C. in an atmosphere of argon, hydrogen or a mixed gas thereof, a step of maintaining the wafer at a temperature lower than the treatment temperature of the high temperature heat treatment is conducted to allow growth of oxygen precipitation nuclei having such a size that the nuclei should be annihilated by the high temperature heat treatment to such a size that the nuclei should not be annihilated by the high temperature heat treatment, and then the high temperature heat treatment is performed. Thus, there are provided a nitrogen-doped annealed wafer with reducing variation of the BMD density after the annealing among silicon single crystal wafers sliced from various positions of the silicon single crystal without being affected by concentration of nitrogen doped in a silicon single crystal and a method for producing the same.

摘要翻译： 本发明提供了一种制造氮掺杂退火晶片的方法，其中在从掺杂有至少氮并且抛光的硅单晶切片的晶片在1100℃至1350℃进行高温热处理之前。 在氩气，氢气或其混合气体的气氛中，进行将晶片维持在低于高温热处理的处理温度的温度的步骤，以允许具有如下尺寸的氧沉淀核的生长：核应该 通过高温热处理而被消除，使得不能通过高温热处理来消除核的尺寸，然后进行高温热处理。 因此，提供了氮掺杂退火晶片，其在硅单晶的各个位置切片的硅单晶晶片退火之后具有降低的BMD密度的变化，而不受硅单晶中掺杂的氮的浓度的影响， 其制造方法

公开(公告)号：US06299982B1

公开(公告)日：2001-10-09

申请号：US09313856

申请日：1999-05-18

申请人： Masaro Tamatsuka ,  Akihiro Kimura ,  Katsuhiko Miki ,  Makoto Iida

发明人： Masaro Tamatsuka ,  Akihiro Kimura ,  Katsuhiko Miki ,  Makoto Iida

IPC分类号： C03B1529

CPC分类号： C30B29/06 ,  C30B15/206 ,  C30B33/00

摘要： There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080° C. to be 2.3° C./min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.

摘要翻译： 公开了通过用掺杂氮处理通过Czochralski法生长的硅单晶锭制造的硅单晶晶片，其中硅单晶晶片中的长期缺陷的尺寸为70nm以下，制造的硅单晶晶片 通过处理通过掺杂氮气的切克劳斯基法生长的硅单晶锭，生长硅单晶锭，控制冷却速率为1150℃至1080℃，为2.3℃/分钟以上， 制造硅单晶晶片，其中使用掺杂氮气生长硅单晶锭，并将冷却速率控制在1150至1080℃至2.3℃/分钟以上，然后进行处理以提供硅单晶 晶圆。 可以通过CZ法以高生产率制造晶体缺陷生长被抑制的器件用硅单晶晶片。

公开(公告)号：US07189293B2

公开(公告)日：2007-03-13

申请号：US10482099

申请日：2002-06-25

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Hiroshi Takeno ,  Ken Aihara

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Hiroshi Takeno ,  Ken Aihara

IPC分类号： C30B33/02

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： The present invention is a method of producing an annealed wafer wherein a silicon single crystal wafer having a diameter of 200 mm or more produced by the Czochralski (CZ) method is subjected to a high temperature heat treatment in an atmosphere of an argon gas, a hydrogen gas, or a mixture gas thereof at a temperature of 1100–1350° C. for 10–600 minutes, and before the high temperature heat treatmen, a pre-annealing is performed at a temperature less than the temperature of the high temperature heat treatment, so that the growth of slip dislocations is suppressed by growing oxide precipitates. Thereby, there is provided a method of producing an annealed wafer wherein the generation and growth of slip dislocations generated in a high temperature heat treatment are suppressed and the defect density in the wafer surface layer is lowered even in the case of a silicon single crystal wafer having a large diameter of 200 mm or more, and the annealed wafer.

摘要翻译： 本发明是一种退火晶片的制造方法，其中通过Czochralski（CZ）方法制造的直径为200mm以上的硅单晶晶片在氩气气氛中进行高温热处理， 氢气或其混合气体在1100-1350℃的温度下进行10-600分钟，在高温热处理之前，在低于高温热的温度下进行预退火 从而通过生长氧化物沉淀物来抑制滑移位错的生长。 因此，提供了一种制造退火晶片的方法，其中抑制了在高温热处理中产生的滑移位错的产生和生长，并且即使在硅单晶晶片的情况下晶片表面层中的缺陷密度也降低 具有大直径为200mm以上的退火晶片。

公开(公告)号：US07147711B2

公开(公告)日：2006-12-12

申请号：US10380818

申请日：2001-09-14

申请人： Masaro Tamatsuka ,  Wei Feig Qu ,  Norihiro Kobayashi

发明人： Masaro Tamatsuka ,  Wei Feig Qu ,  Norihiro Kobayashi

IPC分类号： C30B15/14

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods. Thus, there is provided a DZ-IG silicon wafer in which a DZ layer of high quality is formed, and which can maintain high resistivity even if the wafer is subjected to a heat treatment for device production.

摘要翻译： 本发明提供一种硅晶片的制造方法，其特征在于，使用Czochralski法生长电阻率为100Ω·cm以上，初始间隙氧浓度为10〜25ppma的硅单晶锭， 将硅单晶锭加工成晶片，并对晶片进行热处理，使得晶片中的残余间隙氧浓度应变为8ppma以下，以及制造硅晶片的方法，其包括生长硅单晶 具有100Ω·cm以上的电阻率和8ppma以下的初始间隙氧浓度并通过切克劳斯基法掺杂氮气的晶体锭，将硅单晶锭加工成晶片，并对晶片进行热处理 以在晶片的主体部分中形成氧化物沉淀层，以及通过这些制造方法制造的硅晶片。 因此，提供了一种DZ-IG硅晶片，其中形成了高质量的DZ层，并且即使对晶片进行用于器件制造的热处理也可以保持高电阻率。

公开(公告)号：US06805743B2

公开(公告)日：2004-10-19

申请号：US10333970

申请日：2003-01-24

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya

IPC分类号： C30B2502

CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225

摘要： According to the present invention, there are provided a method for producing a silicon single crystal wafer which contains oxygen induced defects by subjecting a silicon single crystal wafer containing interstitial oxygen to a heat treatment wherein the heat treatment includes at least a step of performing a heat treatment using a resistance-heating type heat treatment furnace and a step of performing a heat treatment using a rapid heating and rapid cooling apparatus, and a silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wafer which has a DZ layer of higher quality compared with a conventional wafer in a wafer surface layer part and has oxygen induced defects at a sufficient density in a bulk part and the silicon single crystal wafer.

摘要翻译： 根据本发明，提供了一种通过对含有间隙氧的硅单晶晶片进行热处理而含有氧诱发缺陷的硅单晶晶片的制造方法，其中，热处理至少包括进行热处理的步骤 使用电阻加热型热处理炉的处理以及使用快速加热和快速冷却装置进行热处理的步骤，以及通过该方法制造的硅单晶晶片。 可以提供一种制造硅单晶晶片的方法，其具有与晶片表面层部分中的常规晶片相比具有更高质量的DZ层，并且在体积部分中具有足够密度的氧诱发缺陷，并且硅单晶 晶圆。