公开(公告)号：US20060013045A1

公开(公告)日：2006-01-19

申请号：US11014507

申请日：2004-12-16

Applicant: Sok Lee

Inventor： Sok Lee

IPC: G11C7/10

CPC classification number: G11C7/1051 ,  G11C7/106 ,  G11C7/1078 ,  G11C7/1087 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/14

Abstract: A page buffer of a non-volatile memory device and a method for programming and reading the same is provided. The page buffer includes a first latch unit and one or more second latch units for storing data, transfer units connected between the first latch unit and the second latch units for transferring the data stored in the first latch unit to the second latch units, a path select unit that that senses data from bit lines and stores the sensed data in the first latch unit, and, in a program operation, transfers the data from the first and second latch units to the bit lines, a sensing unit for allowing the path select unit to sense data or the data received from the bit lines to be stored in the first latch unit, and a data I/O unit.

公开(公告)号：US09328450B2

公开(公告)日：2016-05-03

申请号：US13137864

申请日：2011-09-19

Applicant: Yong Sok Lee ,  Chang Jae Maeng ,  Jung Sang Choi ,  Myung Sun Kang

Inventor： Yong Sok Lee ,  Chang Jae Maeng ,  Jung Sang Choi ,  Myung Sun Kang

IPC: D06F39/08 ,  D06F39/02 ,  D06F29/00

CPC classification number: D06F39/02 ,  D06F29/00 ,  D06F39/088

Abstract: A washing machine in which a detergent case is located below a washing tub unit and detergent and wash water are supplied from the detergent case to the washing tub unit by a pump. An overflow hole to prevent overflow of water to the outside the detergent case is provided on the detergent case, and the detergent and the wash water do not overflow the detergent case and are discharged to an outside of the washing machine through the overflow hole when the pump breaks down.

Abstract translation: 其中洗涤剂盒位于洗涤桶单元下方的洗衣机和洗涤剂和洗涤水通过泵从洗涤剂盒供应到洗涤桶单元。 在洗涤剂盒上设置有用于防止水溢出到洗涤剂外壳的溢流孔，并且洗涤剂和洗涤水不会溢出洗涤剂盒并通过溢流孔排出到洗衣机的外部 泵故障。

公开(公告)号：US20120012161A1

公开(公告)日：2012-01-19

申请号：US13258781

申请日：2010-03-23

Applicant: Kwang-sok Lee

Inventor： Kwang-sok Lee

IPC: H01L31/048 ,  H01L31/18

CPC classification number: B32B17/10908 ,  B32B17/10018 ,  B32B17/10706 ,  B32B17/10807 ,  H01L31/048 ,  Y02E10/50

Abstract: According to the present invention, a method for producing a solar cell module comprises the steps of: arraying at least one solar cell on the upper surface of a base substrate; stacking a transparent upper substrate onto the base substrate to cover the solar cell; injecting a radiation-curable liquid adhesive resin composition into the space formed between the base substrate and the upper substrate such that the space is filled with the composition; and hardening the radiation-curable liquid adhesive resin composition.

Abstract translation: 根据本发明，太阳能电池模块的制造方法包括以下步骤：在基底基板的上表面排列至少一个太阳能电池; 将透明上基板堆叠在基底基板上以覆盖太阳能电池; 将可辐射固化液体粘合剂树脂组合物注入到形成在基底基材和上基材之间的空间中，以便填充该组合物; 并使可辐射固化液体粘合剂树脂组合物硬化。

公开(公告)号：US20100225621A1

公开(公告)日：2010-09-09

申请号：US12709846

申请日：2010-02-22

Applicant: Hyung-Gi JUNG ,  Jeong-Young LEE ,  June-Woo LEE ,  Sok LEE

Inventor： Hyung-Gi JUNG ,  Jeong-Young LEE ,  June-Woo LEE ,  Sok LEE

IPC: G09G5/00

CPC classification number: G09G3/36 ,  G09G3/3611 ,  G09G3/3674 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2310/0281 ,  G09G2310/0286 ,  G09G2330/04

Abstract: A gate driving apparatus includes a first stage which outputs a first gate output signal, and a second stage which outputs a second gate output signal. The first stage includes: a transistor which includes a gate electrode, a source electrode and a drain electrode; and a dummy transistor which includes a dummy gate electrode, a dummy source electrode and a dummy drain electrode. The gate electrode receives the second gate output signal, and the dummy source electrode is connected to the source electrode or the drain electrode of the transistor and prevents static electricity from flowing to the first stage.

Abstract translation: 栅极驱动装置包括输出第一栅极输出信号的第一级和输出第二栅极输出信号的第二级。 第一级包括：晶体管，其包括栅电极，源电极和漏电极; 以及包括虚拟栅电极，虚拟源电极和虚设漏电极的虚拟晶体管。 栅电极接收第二栅极输出信号，虚拟源电极连接到晶体管的源电极或漏电极，防止静电流入第一级。

公开(公告)号：US07452432B2

公开(公告)日：2008-11-18

申请号：US11138772

申请日：2005-05-26

Applicant: Soo Hyun Kim ,  Jun Sok Lee ,  Jai Seong Choi ,  Gyung Soo Kang

Inventor： Soo Hyun Kim ,  Jun Sok Lee ,  Jai Seong Choi ,  Gyung Soo Kang

IPC: B32B41/00

CPC classification number: G01Q70/12 ,  Y10S977/851 ,  Y10S977/856 ,  Y10S977/876 ,  Y10S977/882 ,  Y10S977/896

Abstract: Disclosed herein are an apparatus for and a method of bonding a nano-tip using electrochemical etching, in which a good bonding stability can be provided. The nano-tip bonding apparatus comprises a glass plate having a top surface of a certain desired area. An electrolytic solution having conductivity is placed on the top surface of the glass plate by means of surface tension. Means for moving reciprocally a base material having conductivity in opposite direction is provided. A carbon nano-tube is adhered to a pointed tip of the base material by means of an adhesive. An end portion of the carbon nano-tube is to be immersed in the electrolytic solution. A power supply is provided for applying an electric power to the electrolytic solution and the base material.

Abstract translation: 本文公开了一种使用电化学蚀刻来接合纳米尖端的装置和方法，其中可以提供良好的接合稳定性。 纳米尖端接合装置包括具有一定期望面积的顶面的玻璃板。 具有导电性的电解液通过表面张力放置在玻璃板的顶表面上。 提供了用于相反方向移动具有相反方向的导电性的基材的装置。 通过粘合剂将碳纳米管粘附到基材的尖端。 将碳纳米管的端部浸入电解液中。 提供电源以向电解液和基材施加电力。

公开(公告)号：US07323404B2

公开(公告)日：2008-01-29

申请号：US11069945

申请日：2005-03-03

Applicant: Jung-Sok Lee

Inventor： Jung-Sok Lee

IPC: H01L21/336 ,  H01L21/4763

CPC classification number: H01L29/66787 ,  H01L29/1037

Abstract: A field effect transistor (FET) and related manufacturing method are disclosed, wherein an active region of a semi-conductor substrate is embossed by a first trench structure. A second trench structure and filling shallow trench insulator laterally defines the active region. Sidewalls of the trenches forming the first trench structure descend to a bottom face with a positive sloped, such that the intersection of the respective sidewalls with the bottom face form an obtuse angle.

Abstract translation: 公开了一种场效应晶体管（FET）及相关的制造方法，其中半导体衬底的有源区被第一沟槽结构压花。 横向限定有源区域的第二沟槽结构和填充浅沟槽绝缘体。 形成第一沟槽结构的沟槽的侧壁下降到具有正倾斜的底面，使得各个侧壁与底面的交叉形成钝角。

公开(公告)号：US08733133B2

公开(公告)日：2014-05-27

申请号：US12588582

申请日：2009-10-20

Applicant: Kyoung Seop Shin ,  Jin Doo Kim ,  Yong Sok Lee

Inventor： Kyoung Seop Shin ,  Jin Doo Kim ,  Yong Sok Lee

IPC: D06F39/02 ,  A47B95/02

CPC classification number: D06F39/02

Abstract: Disclosed herein are a washing machine, which has an improved structure to increase the aesthetic appearance and emotional quality of a detergent container, and a drawer assembly of the washing machine. The washing machine includes a washing machine main body, a detergent container connected to the washing machine main body, a drawer panel provided on the detergent container and including a frame part having a predetermined thickness, and a handle defined within the frame part of the drawer panel.

Abstract translation: 本文公开了一种洗衣机，其具有改进的结构，以增加洗涤剂容器的美学外观和情绪质量以及洗衣机的抽屉组件。 洗衣机包括洗衣机主体，与洗衣机主体连接的洗涤剂容器，设置在洗涤剂容器上并具有预定厚度的框架部分的抽屉面板，以及限定在抽屉框架部分内的把手 面板。

公开(公告)号：US08293604B2

公开(公告)日：2012-10-23

申请号：US12838826

申请日：2010-07-19

Applicant: Jae-man Yoon ,  Dong-gun Park ,  Choong-Ho Lee ,  Seong-Goo Kim ,  Won-sok Lee ,  Seung-bae Park

Inventor： Jae-man Yoon ,  Dong-gun Park ,  Choong-Ho Lee ,  Seong-Goo Kim ,  Won-sok Lee ,  Seung-bae Park

IPC: H01L21/336

CPC classification number: H01L29/792 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/115 ,  H01L27/11568 ,  H01L28/91 ,  H01L29/66833 ,  H01L29/7926

Abstract: Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.

Abstract translation: 垂直沟道半导体器件包括具有上表面的柱的半导体衬底。 绝缘栅电极围绕柱的周边。 绝缘栅电极具有比柱的上表面低的垂直级的上表面，以使绝缘栅电极与柱的上表面垂直间隔开。 第一源极/漏极区域在与衬底相邻的衬底中。 第二源极/漏极区域设置在包括柱的上表面的柱的上部区域中。 接触焊盘接触柱的整个上表面以电连接到第二源/漏区。

公开(公告)号：US20120103028A1

公开(公告)日：2012-05-03

申请号：US13137864

申请日：2011-09-19

Applicant: Yong Sok Lee ,  Chang Jae Maeng ,  Jung Sang Choi ,  Myung Sun Kang

Inventor： Yong Sok Lee ,  Chang Jae Maeng ,  Jung Sang Choi ,  Myung Sun Kang

IPC: D06F21/00 ,  D06F39/08 ,  B67D7/84 ,  D06F39/02

CPC classification number: D06F39/02 ,  D06F29/00 ,  D06F39/088

Abstract: A washing machine in which a detergent case is located below a washing tub unit and detergent and wash water are supplied from the detergent case to the washing tub unit by a pump. An overflow hole to prevent overflow of water to the outside the detergent case is provided on the detergent case, and the detergent and the wash water do not overflow the detergent case and are discharged to an outside of the washing machine through the overflow hole when the pump breaks down.

Abstract translation: 其中洗涤剂盒位于洗涤桶单元下方的洗衣机和洗涤剂和洗涤水通过泵从洗涤剂盒供应到洗涤桶单元。 在洗涤剂盒上设置有用于防止水溢出到洗涤剂外壳的溢流孔，并且洗涤剂和洗涤水不会溢出洗涤剂盒并通过溢流孔排出到洗衣机的外部 泵故障。

公开(公告)号：US07781287B2

公开(公告)日：2010-08-24

申请号：US12022329

申请日：2008-01-30

Applicant: Jae-man Yoon ,  Dong-gun Park ,  Choong-Ho Lee ,  Seong-Goo Kim ,  Won-sok Lee ,  Seung-bae Park

Inventor： Jae-man Yoon ,  Dong-gun Park ,  Choong-Ho Lee ,  Seong-Goo Kim ,  Won-sok Lee ,  Seung-bae Park

IPC: H01L21/336

CPC classification number: H01L29/792 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/115 ,  H01L27/11568 ,  H01L28/91 ,  H01L29/66833 ,  H01L29/7926

Abstract: Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the upper surface of the pillar to vertically space apart the insulated gate electrode from the upper surface of the pillar. A first source/drain region is in the substrate adjacent the pillar. A second source/drain region is disposed in an upper region of the pillar including the upper surface of the pillar. A contact pad contacts the entire upper surface of the pillar to electrically connect to the second source/drain region.

Abstract translation: 垂直沟道半导体器件包括具有上表面的柱的半导体衬底。 绝缘栅电极围绕柱的周边。 绝缘栅电极具有比柱的上表面低的垂直级的上表面，以使绝缘栅电极与柱的上表面垂直间隔开。 第一源极/漏极区域在与衬底相邻的衬底中。 第二源极/漏极区域设置在包括柱的上表面的柱的上部区域中。 接触焊盘接触柱的整个上表面以电连接到第二源/漏区。