摘要:
An apparatus for electron beam lithography for automatically focusing a shaped electron beam uniformly projects an electron beam onto a reference aperture plate having an opening of a prescribed shape. The electron beam in the shape of the opening of the aperture thus obtained is reduced or concentrated and then projected onto a specimen, to thereby project the specimen as a microscopic pattern. The apparatus periodically changes the direction of the electron beam disposed between an electron gun emitting the electron beam and the reference aperture plate, and detects the deviation of the position of the final-image electron beam corresponding to the angle of deflection of the electron beam. The focal distance of a final-stage electron lens is adjusted so as to minimize positional deviation and thereby focus the projected electron beam.
摘要:
In an electron microscope for observing an image of a sample using secondary electrons emitted from the sample by two-dimensionally scanning an electron beam on the sample, a low magnification and wide view image of the sample is formed on one frame memory. The frame memory for storing on picture of the image is divided into an appropriate number of areas. The image data of the sample, obtained by consecutively moving the sample to the sample areas, is stored to the corresponding areas of the frame memory.
摘要:
An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.
摘要:
An ion source equipped with an ion beam exit slit for extracting ions from plasma generated in feed gas introduced into a discharge chamber, and with gas inlet or inlets for introducing the feed gas into the discharge chamber in close proximity of the ion beam exit slit. Ion extraction can be made stably without any deposit on the ion beam exit slit even when a boron halide is used as the feed gas. The effect of the ion source can be further enhanced by adding oxygen, hydrogen or gas of an oxygen-containing compound to the feed gas, and by using a microwave.
摘要:
In a method for correcting deflection distortion which develops in an apparatus for delineating a pattern on a sample by scanning a charged particle beam thereover, the corrections of the deflection distortions are made in accordance with the height (deformation) of a portion-to-be-delineated on a sample (for example, a wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam on the mark which has at least two reference levels having unequal heights in the direction of an optical axis.