公开(公告)号：US20120217903A1

公开(公告)日：2012-08-30

申请号：US13368435

申请日：2012-02-08

Applicant: Hirofumi TANAKA ,  Kazuo YAMAMOTO ,  Nobuyuki HARUNA ,  Yuehu PU ,  Kanji SHINKAWA ,  Takayuki KASHIMA

Inventor： Hirofumi TANAKA ,  Kazuo YAMAMOTO ,  Nobuyuki HARUNA ,  Yuehu PU ,  Kanji SHINKAWA ,  Takayuki KASHIMA

IPC: H05H13/08

CPC classification number: H05H13/005 ,  H05H7/12 ,  H05H13/02

Abstract: The circular accelerator comprises: a bending electromagnet that generates a bending magnetic field; a radio-frequency power source that generates a radio-frequency electric field in accordance with an orbital frequency of charged particles; a radio-frequency electromagnetic field coupling part connected to the radio-frequency power source; an acceleration electrode connected to the radio-frequency electromagnetic field coupling part; and an acceleration-electrode-opposing ground plate provided to form an acceleration gap between the plate itself and the acceleration electrode, for generating the radio-frequency electromagnetic field in an orbiting direction of the charged particles; wherein the bending electromagnet generates the bending magnetic field varying in such a way that the orbital frequency of the charged particles varies in a variation range of 0.7% to 24.7% with respect to an orbital frequency at the charged-particles' extraction portion, during a time of injection to extraction of the particles.

Abstract translation: 圆形加速器包括：产生弯曲磁场的弯曲电磁体; 射频电源，其根据带电粒子的轨道频率产生射频电场; 连接到所述射频电源的射频电磁场耦合部; 连接到射频电磁场耦合部分的加速电极; 以及加速电极对置的接地板，其设置成在板本身和加速电极之间形成加速间隙，用于在带电粒子的运动方向上产生射频电磁场; 其中所述弯曲电磁体产生所述弯曲磁场，所述弯曲磁场以使得所述带电粒子的轨道频率相对于所述带电粒子提取部分的轨道频率在0.7％至24.7％的变化范围内变化的方式变化， 注射时间来提取颗粒。

公开(公告)号：US07852898B2

公开(公告)日：2010-12-14

申请号：US12235320

申请日：2008-09-22

Applicant: Takeshi Yokoyama ,  Takayuki Kashima ,  Kouji Makita

Inventor： Takeshi Yokoyama ,  Takayuki Kashima ,  Kouji Makita

IPC: H01S5/00

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/32316 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

Abstract: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

Abstract translation: 在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一 上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。 在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。 端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。 在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。

公开(公告)号：US07633987B2

公开(公告)日：2009-12-15

申请号：US12166688

申请日：2008-07-02

Applicant: Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

Inventor： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

IPC: H01S5/00

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/173

Abstract: A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.

Abstract translation: 半导体激光装置包括第一半导体激光元件和第二半导体激光元件。 第一半导体激光元件具有第一端面窗结构，该第一端面窗结构是包括在端面附近形成的第一杂质的区域，第二半导体激光元件具有第二端面窗结构，该第二端面窗结构是包括形成在端面附近的第二杂质的区域 。 从第一有源层的下端到第一端面窗结构的下端的距离比从第二活性层的下端到第二端面窗结构的下端的距离短。

公开(公告)号：US07505502B2

公开(公告)日：2009-03-17

申请号：US11390426

申请日：2006-03-28

Applicant: Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

Inventor： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

IPC: H01S5/00

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

Abstract: In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element li0 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate i01. Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements ii0 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.

Abstract translation: 在能够实现高功率输出的单片双激光半导体激光器件中，通过共同的步骤形成每个激光元件的窗口结构，从而提高器件的可靠性。 半导体激光器件具有单片集成在n型半导体衬底i01上的红外激光元件li0和红色激光元件120。 红外线和红色激光元件110和120中的每一个具有脊状波导和在每个谐振器面处由Zn扩散形成的窗口结构。 红外和红色激光元件ii0和120包括在各个波导的脊上的p型接触层109和119。 p型接触层109比p型接触层119薄。

公开(公告)号：US20070253457A1

公开(公告)日：2007-11-01

申请号：US11637098

申请日：2006-12-12

Applicant: Takayuki Kashima ,  Kouji Makita

Inventor： Takayuki Kashima ,  Kouji Makita

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/16 ,  H01S5/2214 ,  H01S5/4031 ,  H01S5/4087

Abstract: A first semiconductor laser emitting light with a first wavelength and a second semiconductor laser emitting light with a second wavelength are formed on an identical substrate. Each of the semiconductor lasers includes: a doublehetero structure in which at least a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and a ridge waveguide including at least an upper portion of the second-conductivity-type cladding layer and a contact layer formed on the second-conductivity-type cladding layer. A first-conductivity-type current blocking layer is formed on both side walls of each of the ridge waveguides and on a portion around each of the ridge waveguides, and a leakage preventing layer is formed on the current blocking layer.

Abstract translation: 在相同的基板上形成第一半导体激光器，其发射具有第一波长的第一半导体激光器和发射具有第二波长的光的第二半导体激光器。 每个半导体激光器包括：双重结构，其中至少第一导电型包层，有源层和第二导电型包层依次堆叠; 以及至少包括第二导电型包层的上部的脊波导和形成在第二导电型包层的接触层。 第一导电型电流阻挡层形成在每个脊波导的两个侧壁上以及每个脊波导周围的部分上，并且在电流阻挡层上形成防漏层。

公开(公告)号：US20070124535A1

公开(公告)日：2007-05-31

申请号：US11341720

申请日：2006-01-30

Applicant: Takayuki Kashima ,  Masafumi Nozawa ,  Kyosuke Achiwa

Inventor： Takayuki Kashima ,  Masafumi Nozawa ,  Kyosuke Achiwa

IPC: G06F12/16 ,  G06F12/00

CPC classification number: G06F3/0635 ,  G06F3/061 ,  G06F3/067 ,  G06F2206/1012

Abstract: Provided is a computer system having a host computer that requests the input and output of data in and from an actual storage volume, and a plurality of storage subsystems respectively having at least one or more virtual storage volumes. The virtual storage volumes of each of the plurality of storage subsystems are virtualizations of a common external volume. The host computer sets a certain logical path among a plurality of logical paths to be respectively connected to a plurality of virtual storage volumes formed by virtualizing the common external volume as an alternate path of another logical path.

Abstract translation: 提供了一种具有主计算机的计算机系统，其请求在实际存储卷中输入和输出数据，以及分别具有至少一个或多个虚拟存储卷的多个存储子系统。 多个存储子系统中的每一个的虚拟存储卷是公共外部卷的虚拟化。 主计算机将多个逻辑路径中的某一逻辑路径设置为分别连接到通过将公共外部卷虚拟化而形成的多个虚拟存储卷作为另一逻辑路径的备用路径。

公开(公告)号：US07139298B2

公开(公告)日：2006-11-21

申请号：US10994436

申请日：2004-11-23

Applicant: Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

Inventor： Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/222 ,  H01S5/32325

Abstract: The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; and an n-type AlInP block layer 109. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.

Abstract translation: 本发明的目的在于提供一种具有易于制造，令人满意的温度特性以及高速响应特性的结构的半导体激光器件。 该器件包括：n型GaAs衬底101; 形成在n型GaAs衬底101上的n型AlGaInP包层102; 非掺杂量子阱有源层103; p型AlGaInP第一包覆层104; p型GaInP蚀刻停止层105; p型AlGaInP第二包覆层106; p型GaInP覆盖层107; p型GaAs接触层108; 和n型AlInP阻挡层109。 该装置具有形成在脊部两侧的脊部和凸部，仅在脊部形成p型GaAs接触层108。

公开(公告)号：US5349159A

公开(公告)日：1994-09-20

申请号：US64987

申请日：1993-05-24

Applicant: Tsuneo Mita ,  Tsuneo Shinada ,  Takayuki Kashima

Inventor： Tsuneo Mita ,  Tsuneo Shinada ,  Takayuki Kashima

IPC: B23K9/09 ,  B23K9/095 ,  G05F1/08

CPC classification number: B23K9/0953 ,  B23K9/091 ,  G05F1/08

Abstract: A consumable electrode gas shielded AC arc welding method and an apparatus to practice the method applies alternating current across a consumable electrode and a base metal. During a first period, the electrode is positive and a current of a first level higher than a specified critical level is furnished. During a second period, the electrode is kept positive and current is reduced to a second level lower than the first level. During a third period, the electrode is kept negative at a third current level. These periods are periodically repeated. If during the frist period, the arc voltage drops below a predetermined voltage, current of a fourth level higher than the first level is furnished until the arc voltage exceeds the predetermined level.

Abstract translation: 可消耗电极气体保护的交流电弧焊接方法和实施该方法的装置通过消耗电极和贱金属施加交流电。 在第一阶段期间，电极是正的，并且提供高于指定临界水平的第一电平的电流。 在第二周期期间，电极保持为正，并且电流减小到低于第一电平的第二电平。 在第三周期期间，电极保持负第三电流水平。 周期性地重复这些周期。 如果在第一时间段期间电弧电压下降到预定电压以下，则提供高于第一电平的第四电平的电流，直到电弧电压超过预定电平。

公开(公告)号：US07809042B2

公开(公告)日：2010-10-05

申请号：US12269583

申请日：2008-11-12

Applicant: Kouji Makita ,  Takayuki Kashima

Inventor： Kouji Makita ,  Takayuki Kashima

IPC: H01S5/00

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/2004 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/185

Abstract: A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.

Abstract translation: 双波长半导体激光器件包括：第一半导体激光器件，包括第一导电型第一包层，由AlGaAs混晶构成的第一引导层;具有由AlGaAs混晶构成的阻挡层的第一量子阱有源层; 由AlGaAs混晶构成的第二引导层和第二导电型第二覆层，以及包括第一导电型第三覆层，由AlGaInP混晶构成的第三引导层的第二半导体激光器件，第二量子阱活性 具有由AlGaInP混晶构成的阻挡层的层，由AlGaInP混晶构成的第四引导层和第二导电型第四覆层。 至少包含在第一量子阱活性层，第一引导层和第二引导层中的阻挡层各自具有大于0.47和0.60或更小的Al摩尔比。

公开(公告)号：US07716419B2

公开(公告)日：2010-05-11

申请号：US11341720

申请日：2006-01-30

Applicant: Takayuki Kashima ,  Masafumi Nozawa ,  Kyosuke Achiwa

Inventor： Takayuki Kashima ,  Masafumi Nozawa ,  Kyosuke Achiwa

IPC: G06F12/00

CPC classification number: G06F3/0635 ,  G06F3/061 ,  G06F3/067 ,  G06F2206/1012

Abstract: Provided is a computer system having a host computer that requests the input and output of data in and from an actual storage volume, and a plurality of storage subsystems respectively having at least one or more virtual storage volumes. The virtual storage volumes of each of the plurality of storage subsystems are virtualizations of a common external volume. The host computer sets a certain logical path among a plurality of logical paths to be respectively connected to a plurality of virtual storage volumes formed by virtualizing the common external volume as an alternate path of another logical path.

Abstract translation: 提供了一种具有主计算机的计算机系统，其请求在实际存储卷中输入和输出数据，以及分别具有至少一个或多个虚拟存储卷的多个存储子系统。 多个存储子系统中的每一个的虚拟存储卷是公共外部卷的虚拟化。 主计算机将多个逻辑路径中的某一逻辑路径设置为分别连接到通过将公共外部卷虚拟化而形成的多个虚拟存储卷作为另一逻辑路径的备用路径。