摘要:
Disclosed is a test assistant system for a logical design process comprising a description storage data base for storing statements expressing logical functions of circuit components to be tested, a compiler for compiling the statements to output object data, a data base for storing the object data, a test pattern generator for generating test patterns by using the object data stored in the data base, a test pattern data base for storing the test patterns, each having a level number, a simulator for executing a simulation for the logical function by using the test patterns stored in the test pattern data base, and a display for displaying the object data, the test patterns, the information used in the simulation, and relationships among them. The data base comprises a region for storing a statement correspondence table expressing statements as descriptions of the logical functions of the circuit components, a region for storing a circuit component table expressing a circuit component corresponding to the function described in the statement, a region for storing a dependent relationship table expressing the dependent relationship between the statements, and a correspondence relationship table expressing the correspondence relationship between the statement correspondence table and the circuit component table.
摘要:
A block access system using a cache memory comprises a first control circuit for producing a block access request for requesting read-out of all data included in a block of a predetermined size in response to an access request from an operation unit and inputting the data read out from a main memory unit into a cache memory, and a second control circuit for reading out data from the main memory unit and sending back to the first control circuit a response signal which indicates any one of execution and cancellation of the requested block access in response to the block access request from the first control means. Memory addresses necessary for reading out all the data in one block are produced by the first control circuit when the block access request is cancelled. Alternatively, memory addresses are supplied by the second control circuit when the block access request is executed.
摘要:
Ureylenethiophanes and their related compounds of the formula: ##SPC1##Having a cis-configuration on the ureylene or thioureylene juncture, which are useful as the intermediates in the synthesis of biologically active biotin and its related compounds, can be produced selectively by reacting the corresponding compounds of the formula: ##SPC2##With isocyanates or isothiocyanates wherein R is a hydrogen atom, an alkyl group or an aralkyl group, R.sub.1 and R.sub.2 are each a hydrogen atom or an aliphatic hydrocarbon group bearing or not a carboxyl group or any other group convertible thereto at the terminal position, X is a halogen atom, Y is an oxygen atom or a sulfur atom and Z is an oxygen atom, a sulfur atom, a sulfinyl group or a sulfonyl group.
摘要:
A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55≦B/A≦20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.
摘要翻译:具有散热器的功率模块基板包括:具有绝缘基板的功率模块基板,具有第一面和第二面,在所述第一面上形成的电路层,以及形成在所述第二面上的金属层。 和直接连接到金属层的散热片,冷却功率模块基板,其中比率B / A在由1.55 @ B / A @ 20定义的范围内,其中电路层的厚度表示为A,而 金属层的厚度表示为B.
摘要:
A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.
摘要:
A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.
摘要:
Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.
摘要:
A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.
摘要:
A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55≦B/A≦20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.