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1.发明申请POWER MODULE SUBSTRATE HAVING HEATSINK, METHOD FOR MANUFACTURING THE SAME, POWER MODULE HAVING HEATSINK, AND POWER MODULE SUBSTRATE 有权具有HEATSINK的功率模块基板，其制造方法，具有HEATSINK的功率模块和功率模块基板公开(公告)号：US20110017496A1
公开(公告)日：2011-01-27
申请号：US12922732
申请日：2009-03-11
CPC分类号： H01L23/3735 , H01L2224/32225 , Y10T29/49126 , Y10T29/49227
摘要： A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55≦B/A≦20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.
摘要翻译： 具有散热器的功率模块基板包括：具有绝缘基板的功率模块基板，具有第一面和第二面，形成在第一面上的电路层和形成在第二面上的金属层; 和直接连接到金属层的散热器，冷却功率模块基板，其中比率B / A在由1.55＆amp; NlE; B / A＆amp; NlE; 20定义的范围内，其中电路层的厚度表示为A，以及 金属层的厚度表示为B.
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2.发明授权Power module substrate having heatsink, method for manufacturing the same, power module having heatsink, and power module substrate 有权具有散热器的功率模块基板，其制造方法，具有散热器的功率模块和功率模块基板公开(公告)号：US08637777B2
公开(公告)日：2014-01-28
申请号：US12922732
申请日：2009-03-11
CPC分类号： H01L23/3735 , H01L2224/32225 , Y10T29/49126 , Y10T29/49227
摘要： A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55≦B/A≦20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.
摘要翻译： 具有散热器的功率模块基板包括：具有绝缘基板的功率模块基板，具有第一面和第二面，在所述第一面上形成的电路层，以及形成在所述第二面上的金属层。 和直接连接到金属层的散热片，冷却功率模块基板，其中比率B / A在由1.55 @ B / A @ 20定义的范围内，其中电路层的厚度表示为A，而 金属层的厚度表示为B.
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3.发明申请CERAMIC SUBSTRATE, METHOD OF MANUFACTURING CERAMIC SUBSTRATE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE 审中-公开陶瓷基板，制造陶瓷基板的方法和制造功率模块基板的方法公开(公告)号：US20100258233A1
公开(公告)日：2010-10-14
申请号：US12734428
申请日：2008-11-06
申请人： Hiroshi Tonomura , Takeshi Kitahara , Hiroya Ishizuka , Yoshirou Kuromitsu , Yoshiyuki Nagatomo
发明人： Hiroshi Tonomura , Takeshi Kitahara , Hiroya Ishizuka , Yoshirou Kuromitsu , Yoshiyuki Nagatomo
CPC分类号： B23K1/20 , C04B35/584 , C04B37/026 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C04B2235/96 , C04B2237/121 , C04B2237/128 , C04B2237/368 , C04B2237/402 , C04B2237/52 , C04B2237/704 , C04B2237/706 , C04B2237/86 , H01L21/4807 , H01L21/481 , H01L23/15 , H01L23/3735 , H01L23/4006 , H01L23/473 , H01L2224/32225 , H01L2224/48227 , H01L2924/1305 , H01L2924/13055 , H05K1/0306 , H05K3/0029 , H05K3/0052 , H05K3/38 , H05K3/381 , H05K2201/0355 , H05K2201/09036 , H05K2201/0909 , H05K2203/095 , Y10T29/49155 , H01L2924/00
摘要： Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.
摘要翻译： 公开了包括硅的陶瓷基板，其表面中的氧化硅和硅复合氧化物的浓度小于或等于2.7原子％。
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4.发明授权Power element mounting substrate, method of manufacturing the same, power element mounting unit, method of manufacturing the same, and power module 有权功率元件安装基板，其制造方法，功率元件安装单元，其制造方法以及功率模块公开(公告)号：US08198540B2
公开(公告)日：2012-06-12
申请号：US12303513
申请日：2007-06-06
CPC分类号： H01L23/3736 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L2224/32225 , H05K1/09 , H05K3/38 , H05K2201/0269 , Y10T29/49124
摘要： A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.
摘要翻译： 一种功率元件安装基板，包括钎焊到陶瓷板的表面的电路层和焊接到电路层的前表面的功率元件，其中电路层使用平均纯度大于或等于 等于98.0重量％且小于或等于99.9重量％时，要钎焊到陶瓷板的表面侧的电路层的Fe浓度小于0.1重量％，电路层的铁浓度在 与钎焊表面相对的表面的一侧大于或等于0.1重量％。
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5.发明申请POWER ELEMENT MOUNTING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, POWER ELEMENT MOUNTING UNIT, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE 有权功率元件安装基板，其制造方法，功率元件安装单元，其制造方法和功率模块公开(公告)号：US20090145642A1
公开(公告)日：2009-06-11
申请号：US12303513
申请日：2007-06-06
CPC分类号： H01L23/3736 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L2224/32225 , H05K1/09 , H05K3/38 , H05K2201/0269 , Y10T29/49124
摘要： A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.
摘要翻译： 一种功率元件安装基板，包括钎焊到陶瓷板的表面的电路层和焊接到电路层的前表面的功率元件，其中电路层使用平均纯度大于或等于 等于98.0重量％且小于或等于99.9重量％时，要钎焊到陶瓷板的表面侧的电路层的Fe浓度小于0.1重量％，电路层的铁浓度在 与钎焊表面相对的表面的一侧大于或等于0.1重量％。
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6.发明申请POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE, AND POWER MODULE 有权功率模块基板，制造功率模块基板的方法和功率模块公开(公告)号：US20090267215A1
公开(公告)日：2009-10-29
申请号：US12446826
申请日：2007-10-26
IPC分类号： H01L23/488 , H01L23/15 , H01L21/60
CPC分类号： H01L23/3735 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/072 , H01L2224/291 , H01L2224/32225 , H01L2224/83424 , H05K1/0306 , H05K1/09 , H05K3/0061 , H05K3/202 , H05K3/38 , H05K2201/0355 , H05K2201/068 , H05K2203/0405 , H01L2924/014
摘要： Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.
摘要翻译： 公开了具有改进的接头可靠性的功率模块。 具体公开了一种功率模块，其包括功率模块基板，其中电路层钎焊在陶瓷基板的前表面上，金属层钎焊在陶瓷基板的后表面上，半导体芯片焊接到电路层。 金属层由平均纯度不小于98.0重量％的Al合金构成。 ％但不超过99.9wt。 作为一个整体。 在该金属层中，将与陶瓷基板钎焊的表面侧的Fe浓度设定为小于0.1重量％。 ％，并且与钎焊表面相反的表面侧的Fe浓度设定为0.1重量％以上。 ％。
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7.发明授权Power module substrate, method for manufacturing power module substrate, and power module 有权电源模块基板，电源模块基板制造方法及电源模块公开(公告)号：US08044500B2
公开(公告)日：2011-10-25
申请号：US12446826
申请日：2007-10-26
CPC分类号： H01L23/3735 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/072 , H01L2224/291 , H01L2224/32225 , H01L2224/83424 , H05K1/0306 , H05K1/09 , H05K3/0061 , H05K3/202 , H05K3/38 , H05K2201/0355 , H05K2201/068 , H05K2203/0405 , H01L2924/014
摘要： Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.
摘要翻译： 公开了具有改进的接头可靠性的功率模块。 具体公开了一种功率模块，其包括功率模块基板，其中电路层钎焊在陶瓷基板的前表面上，金属层钎焊在陶瓷基板的后表面上，半导体芯片焊接到电路层。 金属层由平均纯度不小于98.0重量％的Al合金构成。 ％但不超过99.9wt。 作为一个整体。 在该金属层中，将与陶瓷基板钎焊的表面侧的Fe浓度设定为小于0.1重量％。 ％，并且与钎焊表面相反的表面侧的Fe浓度设定为0.1重量％以上。 ％。
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8.发明授权Power module substrate, power module, and method for manufacturing power module substrate 有权功率模块基板，功率模块和制造功率模块基板的方法公开(公告)号：US08609993B2
公开(公告)日：2013-12-17
申请号：US12736813
申请日：2009-05-15
IPC分类号： H05K1/03
CPC分类号： H05K1/053 , H01L23/3735 , H01L2224/32225 , H05K1/021 , H05K1/0212 , H05K1/18 , H05K1/181 , H05K7/06 , Y10T29/49124 , Y10T428/12576
摘要： A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.
摘要翻译： 功率模块基板包括：具有顶面的由AlN构成的陶瓷基板; 由纯铝构成的金属板，并且在陶瓷基板的顶面与包含硅的钎料相接合; 以及形成在金属板与陶瓷基板接合的接合界面处的高浓度部分，其硅浓度大于金属板中的硅浓度的五倍。
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9.发明申请POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE 有权功率模块基板，功率模块和制造功率模块基板的方法公开(公告)号：US20110067906A1
公开(公告)日：2011-03-24
申请号：US12736813
申请日：2009-05-15
CPC分类号： H05K1/053 , H01L23/3735 , H01L2224/32225 , H05K1/021 , H05K1/0212 , H05K1/18 , H05K1/181 , H05K7/06 , Y10T29/49124 , Y10T428/12576
摘要： A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.
摘要翻译： 功率模块基板包括：具有顶面的由AlN构成的陶瓷基板; 由纯铝构成的金属板，并且在陶瓷基板的顶面与包含硅的钎料相接合; 以及形成在金属板与陶瓷基板接合的接合界面处的高浓度部分，其硅浓度大于金属板中的硅浓度的五倍。
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10.发明申请POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE 有权功率模块基板，功率模块和制造功率模块基板的方法公开(公告)号：US20110074010A1
公开(公告)日：2011-03-31
申请号：US12737042
申请日：2009-06-05
申请人： Yoshirou Kuromitsu , Yoshiyuki Nagatomo , Takeshi Kitahara , Hiroshi Tonomura , Kazuhiro Akiyama
发明人： Yoshirou Kuromitsu , Yoshiyuki Nagatomo , Takeshi Kitahara , Hiroshi Tonomura , Kazuhiro Akiyama
IPC分类号： H01L23/373 , H01R43/00
CPC分类号： H01L21/76838 , B23K1/0008 , B23K1/0016 , B23K1/20 , C04B2237/407 , H01L23/3735 , H01L23/498 , H01L24/29 , H01L24/32 , H01L2224/29111 , H01L2224/32225 , H01L2924/01322 , H05K1/0271 , H05K1/0306 , H05K1/09 , H05K1/181 , Y10T29/49117 , Y10T428/12056 , Y10T428/12486 , Y10T428/12576 , Y10T428/12611 , H01L2924/01047 , H01L2924/01049 , H01L2924/01029 , H01L2924/00
摘要： A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.
摘要翻译： 功率模块基板包括：具有表面的陶瓷基板; 以及在陶瓷基板和金属板之间的接合界面处连接到由铝构成的陶瓷基板的表面并且包括Cu的金属板，其中接合界面处的Cu浓度在0.05〜5重量％的范围内 ％。
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