Dynamic fluid valve and method for establishing the same

    公开(公告)号:US09822447B2

    公开(公告)日:2017-11-21

    申请号:US13576145

    申请日:2011-01-31

    CPC classification number: C23C16/45551 C23C14/568 H01L21/67784

    Abstract: A method, comprising: —providing a process space atmosphere at a process space atmosphere pressure; —providing an exterior atmosphere at an exterior atmosphere pressure that is different from the process space atmosphere pressure; —providing a passage via which the exterior atmosphere is in open communication with the process space atmosphere, and via which substrates are exchangeable between the exterior atmosphere and the process space atmosphere; —injecting an exchange fluid into the passage at at least one exchange fluid injection point, so as to effect a flow of exchange fluid that extends through at least a part of the passage, wherein said flow is directed towards —the exterior in case the exterior atmosphere pressure is greater than the process space atmosphere pressure; or —the process space in case the exterior atmosphere pressure is smaller than the process space atmosphere pressure.

    Media exposure and verification utilizing inductive coupling
    12.
    发明授权
    Media exposure and verification utilizing inductive coupling 有权
    使用电感耦合的介质曝光和验证

    公开(公告)号:US08977194B2

    公开(公告)日:2015-03-10

    申请号:US13327993

    申请日:2011-12-16

    Abstract: A computer-implemented system and method for establishing media data exposure, where a media device, such as a computer, radio, television and the like, receive media data and produces research data from it. The research data may be based on computer-based or computer network-based characteristics, ancillary codes or audio signatures. As the research data is being produced, an inductive coupling is sought for nearby portable computer devices. Once a portable computing device inductively couples to the media device, information is transferred, allowing a system to determine and/or verify that specific users were exposed to particular media data.

    Abstract translation: 用于建立媒体数据曝光的计算机实现的系统和方法,其中诸如计算机,无线电,电视等媒体设备从其接收媒体数据并产生研究数据。 研究数据可以基于基于计算机或计算机网络的特征,辅助代码或音频签名。 随着研究数据的制作,寻找附近便携式计算机设备的电感耦合。 一旦便携式计算设备感应地耦合到媒体设备,则传送信息,允许系统确定和/或验证特定用户被暴露于特定媒体数据。

    Media exposure linking utilizing bluetooth signal characteristics
    13.
    发明授权
    Media exposure linking utilizing bluetooth signal characteristics 有权
    使用蓝牙信号特性的媒体曝光链接

    公开(公告)号:US08538333B2

    公开(公告)日:2013-09-17

    申请号:US13327943

    申请日:2011-12-16

    Abstract: A computer-implemented method for establishing media data exposure for a computer processing device, where media data received in the computer processing device. The computer processing device pairs itself with a plurality of portable computing devices using a Bluetooth connection when media data is received. A signal strength characteristic of the Bluetooth connection is established in the computer processing device for each of the paired plurality of portable computing devices. Each signal strength characteristic with the received media data is then established to determine which signal strength characteristic is the strongest when the media data was received in the computer processing device.

    Abstract translation: 一种用于为计算机处理设备建立媒体数据曝光的计算机实现的方法,其中在计算机处理设备中接收到媒体数据。 当接收到媒体数据时,计算机处理设备将自身与使用蓝牙连接的多个便携式计算设备配对。 对于成对的多个便携式计算设备中的每一个,在计算机处理设备中建立蓝牙连接的信号强度特性。 然后建立接收的媒体数据的每个信号强度特性,以确定当在计算机处理装置中接收到媒体数据时哪个信号强度特性最强。

    EDS protection diode with pwell-nwell resurf
    14.
    发明授权
    EDS protection diode with pwell-nwell resurf 有权
    EDS保护二极管与pwell-nwell resurf

    公开(公告)号:US08497167B1

    公开(公告)日:2013-07-30

    申请号:US11654736

    申请日:2007-01-17

    CPC classification number: H01L27/0255 H01L29/063 H01L29/861

    Abstract: A high voltage ESD protection diode wherein the p-n junction is defined by a p-well and an n-well and includes a RESURF region, the diode including a field oxide layer formed on top of the p-well and n-well, wherein the parameters of the diode are adjustable by controlling one or more of the junction width, the length of the RESURF region, or the length of the field oxide layer.

    Abstract translation: 一种高压ESD保护二极管,其中pn结由p阱和n阱限定并且包括RESURF区,所述二极管包括形成在p阱和n阱顶部的场氧化物层,其中, 通过控制一个或多个结宽度,RESURF区域的长度或场氧化物层的长度可以调节二极管的参数。

    Method and device for determining the temperature of a substrate
    16.
    发明授权
    Method and device for determining the temperature of a substrate 有权
    用于确定衬底温度的方法和装置

    公开(公告)号:US08002463B2

    公开(公告)日:2011-08-23

    申请号:US12138848

    申请日:2008-06-13

    CPC classification number: G01K5/32 G01K5/28

    Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

    Abstract translation: 该出版物公开了一种用于确定衬底的温度的方法,包括:提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底,使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流,所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率,使用沿着气体通道的压降,基板的壁温度和温度之间的预定关系,从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。

    Methods of forming silicide films in semiconductor devices
    18.
    发明授权
    Methods of forming silicide films in semiconductor devices 有权
    在半导体器件中形成硅化物膜的方法

    公开(公告)号:US07153772B2

    公开(公告)日:2006-12-26

    申请号:US10866643

    申请日:2004-06-10

    CPC classification number: H01L21/28518 H01L29/665

    Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    Abstract translation: 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料(例如硅)的区域中的覆盖材料(例如金属)完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散(例如,覆盖绝缘体)。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性,其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断,优选也通过与间隔紧密的块状板进行导电热交换。

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