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    OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT
    11.
    发明申请
    OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT 失效
    振荡电路包括麻省电器和调节振荡电路的振荡频率的方法

    公开(公告)号：US20100085126A1

    公开(公告)日：2010-04-08

    申请号：US12531058

    申请日：2008-03-05

    Applicant: Yong-Wook Lee ,  Bong-Jun Kim ,  Hyun-Tak Kim ,  Sung-Youl Choi ,  Byung-Gyu Chae ,  Jung-Wook Lim ,  Sun-Jin Yun

    Inventor： Yong-Wook Lee ,  Bong-Jun Kim ,  Hyun-Tak Kim ,  Sung-Youl Choi ,  Byung-Gyu Chae ,  Jung-Wook Lim ,  Sun-Jin Yun

    IPC: H03B1/00

    CPC classification number: H01L49/003 ,  H03B9/12

    Abstract: Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.

    Abstract translation: 提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生 电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压 或电流到MIT设备。 根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

    Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device
    13.
    发明授权
    Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device 有权
    基于锗的金属 - 绝缘体转变薄膜，包括金属 - 绝缘体转变薄膜的金属 - 绝缘体转换装置，以及制造金属 - 绝缘体转移装置的方法

    公开(公告)号：US08330135B2

    公开(公告)日：2012-12-11

    申请号：US12671890

    申请日：2008-06-20

    Applicant: Sung-Youl Choi ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Jae-Yeob Shim ,  Hyun-Tak Kim

    Inventor： Sung-Youl Choi ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Jae-Yeob Shim ,  Hyun-Tak Kim

    IPC: H01L47/00

    CPC classification number: H01L49/003

    Abstract: Provided are a germanium (Ge) based metal-insulator transition (MIT) thin film which is formed of a Ge single-element material instead of a compound material of two or more elements and by which material growth may be easily performed and a problem of a second phase characteristic in accordance with a structural defect and an included impurity may be solved, an MIT device including the MIT thin film, and a method of fabricating the MIT device. The MIT device includes a substrate; a germanium (Ge) based MIT thin film which is formed of a Ge single-element material on the substrate and in which a discontinuous MIT occurs at a predetermined transition voltage; and at least two thin film electrodes contacting the Ge based MIT thin film, wherein the discontinuous MIT occurs in the Ge based MIT thin film due to a voltage or a current which is applied through the thin film electrodes.

    Abstract translation: 提供了由Ge单元素材料代替两种或更多种元素的复合材料形成的锗（Ge）基金属 - 绝缘体转变（MIT）薄膜，并且可容易地进行材料生长的问题 可以解决根据结构缺陷和所包括的杂质的第二相特性，包括MIT薄膜的MIT装置和制造MIT装置的方法。 MIT装置包括基板; 在基板上由Ge单元素材料形成的锗（Ge）基MIT薄膜，其中以预定的转变电压发生不连续的MIT; 以及与Ge基MIT薄膜接触的至少两个薄膜电极，其中由于通过薄膜电极施加的电压或电流，在Ge基MIT薄膜中发生不连续的MIT。

    Circuit for continuously measuring discontinuous metal insulator transition of MIT element and MIT sensor using the same
    14.
    发明授权
    Circuit for continuously measuring discontinuous metal insulator transition of MIT element and MIT sensor using the same 有权
    用于连续测量MIT元件和MIT传感器的不连续金属绝缘体转换的电路

    公开(公告)号：US08207750B2

    公开(公告)日：2012-06-26

    申请号：US12376668

    申请日：2007-07-05

    Applicant: Hyun-Tak Kim ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Sang-Kuk Choi

    Inventor： Hyun-Tak Kim ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Sang-Kuk Choi

    IPC: G01R31/02

    CPC classification number: G01R31/2641

    Abstract: Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.

    Abstract translation: 提供了一种用于连续测量使用该电路的MIT元件和MIT传感器的不连续金属 - 绝缘体转变（MIT）的电路。 该电路包括被测量对象单元，其包括具有在其转变电压下出现的不连续MIT的MIT元件，向待测量对象单元施加预定脉冲电流或电压信号的电源单元， 测量MIT元件的不连续MIT的单元，以及控制电源单元和测量单元的微处理器。 不连续的MIT测量电路连续测量MIT元件的不连续MIT，因此它可以用作感测外部因素变化的传感器。

    Abrupt metal-insulator transition device with parallel MIT material layers
    15.
    发明授权
    Abrupt metal-insulator transition device with parallel MIT material layers 有权
    具有并联MIT材料层的突发金属 - 绝缘体转换装置

    公开(公告)号：US07989792B2

    公开(公告)日：2011-08-02

    申请号：US12162964

    申请日：2007-01-31

    Applicant: Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

    Inventor： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

    IPC: H01L49/00

    CPC classification number: H01L49/003

    Abstract: An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.

    Abstract translation: 提供了具有平行MIT材料层的突发MIT（金属 - 绝缘体转变）器件。 突变MIT装置包括设置在基板的某个区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及至少一个MIT材料层，电连接第一电极与第二电极 电极，并且具有允许MIT材料层的整个区域由于MIT而转变成金属层的宽度。 由于这种构造，通常由流过MIT材料层的电流引起的MIT材料层的劣化不太可能发生。

    Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor
    16.
    发明授权
    Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor 有权
    使用突变金属 - 绝缘体转换（MIT）的温度传感器和包含温度传感器的报警器

    公开(公告)号：US07944360B2

    公开(公告)日：2011-05-17

    申请号：US12090084

    申请日：2006-06-27

    Applicant: Hyun-Tak Kim ,  Kwang-Yong Kang ,  Yong-Wook Lee ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Sang-Kuk Choi ,  Sun-Jin Yun

    Inventor： Hyun-Tak Kim ,  Kwang-Yong Kang ,  Yong-Wook Lee ,  Byung-Gyu Chae ,  Bong-Jun Kim ,  Sang-Kuk Choi ,  Sun-Jin Yun

    IPC: G08B17/00

    CPC classification number: G01K3/005 ,  G01K7/22

    Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

    Abstract translation: 提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。 突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。 突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。 报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。 因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

    Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same
    18.
    发明申请
    Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same 有权
    三端子金属绝缘体转换开关，包括相同的开关系统及其控制金属 - 绝缘体转换的方法

    公开(公告)号：US20100301300A1

    公开(公告)日：2010-12-02

    申请号：US12599248

    申请日：2008-05-07

    Applicant: Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sung-Youl Choi ,  Sun-Jin Yun

    Inventor： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sung-Youl Choi ,  Sun-Jin Yun

    IPC: H01L49/00

    CPC classification number: H01L49/003

    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

    Abstract translation: 提供一种3端子MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常闭栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法 开关。 三端MIT开关包括一个2端MIT装置，它产生一个过渡电压的不连续MIT，一个入口电极（200）和一个出口电极（300），分别连接到两端MIT的每个端子 装置和控制电极（400），其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中所述2端子MIT装置的MIT根据电压或 施加到控制电极的电流。 开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

    Gas delivery system for supplying gas to semiconductor manufacturing equipment
    20.
    发明授权
    Gas delivery system for supplying gas to semiconductor manufacturing equipment 失效
    用于向半导体制造设备供气的气体输送系统

    公开(公告)号：US07040336B2

    公开(公告)日：2006-05-09

    申请号：US10666734

    申请日：2003-09-18

    Applicant: Yu-kweon Kim ,  Seung-ki Chae ,  Jai-kang Jeon ,  Young-seok Roh ,  Yong-wook Lee

    Inventor： Yu-kweon Kim ,  Seung-ki Chae ,  Jai-kang Jeon ,  Young-seok Roh ,  Yong-wook Lee

    IPC: F16K37/00

    CPC classification number: C23C16/45561 ,  Y10T137/0318 ,  Y10T137/5762 ,  Y10T137/8175

    Abstract: A gas delivery system for providing a gas to manufacturing equipment includes a gas supply unit for providing the gas to the manufacturing equipment including devices to regulate the supply of gas from the gas supply unit to the manufacturing equipment. The system includes a main control unit for regulating the supply of the gas to the manufacturing equipment. The gas delivery system includes a supplemental control unit which receives an emergency shutdown signal from the main control unit for closing off the supply of gas in response to a malfunction of the main control unit and generates a signal for maintaining a gas flow to operate the manufacturing equipment until the cause of the malfunction has been determined. With the system, an unnecessary emergency shutdown of gas supply to semiconductor manufacturing equipment in response to a malfunction of a main controller can be prevented.

    Abstract translation: 用于向制造设备提供气体的气体输送系统包括用于向制造设备提供气体的气体供应单元，包括用于调节从气体供应单元向制造设备供应气体的装置。 该系统包括用于调节向制造设备供应气体的主控制单元。 气体输送系统包括补充控制单元，其接收来自主控制单元的紧急关闭信号，用于响应于主控制单元的故障而关闭气体供应，并产生维持气流以操作制造的信号 设备直到故障原因确定。 利用该系统，可以防止响应于主控制器的故障而对半导体制造设备的气体供应的不必要的紧急关闭。

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