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公开(公告)号：US08431329B2
公开(公告)日：2013-04-30
申请号：US12825117
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
Abstract: Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了自对准间隔物多图案化方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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公开(公告)号：US20130069246A1
公开(公告)日：2013-03-21
申请号：US13620754
申请日：2012-09-15
Applicant: Young Cheol BAE , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol BAE , Thomas Cardolaccia , Yi Liu
IPC: H01L23/48
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了形成电子器件的方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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公开(公告)号：US08394571B2
公开(公告)日：2013-03-12
申请号：US12825166
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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公开(公告)号：US08338083B2
公开(公告)日：2012-12-25
申请号：US12825157
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了形成电子器件的方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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公开(公告)号：US20110117490A1
公开(公告)日：2011-05-19
申请号：US12825166
申请日：2010-06-28
Applicant: Young Cheol BAE , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol BAE , Thomas Cardolaccia , Yi Liu
CPC classification number: G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了形成电子器件的方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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Patent Agency Ranking
公开(公告)号：US20110008729A1
公开(公告)日：2011-01-13
申请号：US12825124
申请日：2010-06-28
Applicant: Young Cheol BAE , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol BAE , Thomas Cardolaccia , Yi Liu
IPC: G03F7/004
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了可用于处理电子设备制造中的光致抗蚀剂图案的组合物。 该组合物允许形成精细的平版印刷图案并且在半导体器件制造中发现特定的适用性。
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公开(公告)号：US20100330501A1
公开(公告)日：2010-12-30
申请号：US12825170
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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公开(公告)号：US20130244180A1
公开(公告)日：2013-09-19
申请号：US13607733
申请日：2012-09-09
Applicant: Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
Inventor： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
CPC classification number: C09D133/16 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/30 , G03F7/325 , H01L21/3081 , Y10S430/114 , Y10S430/12
Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
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公开(公告)号：US08492068B2
公开(公告)日：2013-07-23
申请号：US12825134
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了形成电子器件的方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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20.发明申请公开(公告)号：US20120064456A1
公开(公告)日：2012-03-15
申请号：US13229672
申请日：2011-09-10
Applicant: Young Cheol BAE , Thomas Cardolaccia , Jibin Sun , Daniel J. Arriola , Kevin A. Frazier
Inventor： Young Cheol BAE , Thomas Cardolaccia , Jibin Sun , Daniel J. Arriola , Kevin A. Frazier
CPC classification number: G03F7/0397 , G03F7/0045 , G03F7/2041 , G03F7/325
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基材。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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