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公开(公告)号：US08338079B2
公开(公告)日：2012-12-25
申请号：US12825124
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Compositions are provided which can be used for treating photoresist patterns in the manufacture of electronic devices. The compositions allow for the formation of fine lithographic patterns and find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了可用于处理电子设备制造中的光致抗蚀剂图案的组合物。 该组合物允许形成精细的平版印刷图案并且在半导体器件制造中发现特定的适用性。
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公开(公告)号：US20100330503A1
公开(公告)日：2010-12-30
申请号：US12825134
申请日：2010-06-28
Applicant: Young Cheol BAE , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol BAE , Thomas Cardolaccia , Yi Liu
IPC: G03F7/20
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了形成电子器件的方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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公开(公告)号：US20100330500A1
公开(公告)日：2010-12-30
申请号：US12825157
申请日：2010-06-28
Applicant: Young Cheol BAE , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol BAE , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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公开(公告)号：US20100330499A1
公开(公告)日：2010-12-30
申请号：US12825150
申请日：2010-06-28
Applicant: Young Cheol BAE , Thomas CARDOLACCIA , Yi LIU
Inventor： Young Cheol BAE , Thomas CARDOLACCIA , Yi LIU
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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5.发明授权公开(公告)号：US09188864B2
公开(公告)日：2015-11-17
申请号：US13149573
申请日：2011-05-31
Applicant: Young Cheol Bae , Deyan Wang , Thomas Cardolaccia , Seokho Kang , Rosemary Bell
Inventor： Young Cheol Bae , Deyan Wang , Thomas Cardolaccia , Seokho Kang , Rosemary Bell
IPC: G03F7/004 , G03F7/40 , G03F7/039 , H01L21/027 , G03F7/11 , G03F7/20 , G03F7/32 , C08F220/28
CPC classification number: G03F7/0382 , C07C69/54 , C07C2603/74 , C08F2220/283 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/0276
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基材。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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Patent Agency Ranking
6.发明授权公开(公告)号：US08975001B2
公开(公告)日：2015-03-10
申请号：US13407508
申请日：2012-02-28
Applicant: Young Cheol Bae , Rosemary Bell , Thomas Cardolaccia , Seung-Hyun Lee , Yi Liu , Jong Keun Park
Inventor： Young Cheol Bae , Rosemary Bell , Thomas Cardolaccia , Seung-Hyun Lee , Yi Liu , Jong Keun Park
CPC classification number: G03F7/0397 , G03F7/091 , G03F7/2041 , G03F7/325
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了可用于形成光刻图案的光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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公开(公告)号：US08697338B2
公开(公告)日：2014-04-15
申请号：US13607729
申请日：2012-09-09
Applicant: Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
Inventor： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
IPC: G03F7/26
CPC classification number: G03F7/11 , G03F7/0397 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/3081
Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供光刻胶外涂层组合物，涂覆有外涂层组合物的基材和通过负色调显影方法形成电子器件的方法。 组合物，涂覆的基底和方法在半导体器件的制造中特别适用。
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8.发明授权Polymers, photoresist compositions and methods of forming photolithographic patterns 有权聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US08614050B2
公开(公告)日：2013-12-24
申请号：US13341935
申请日：2011-12-31
Applicant: Young Cheol Bae , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
Inventor： Young Cheol Bae , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
IPC: G03F7/00 , C08F224/00 , C08F220/26
CPC classification number: G03F7/0397 , C08F220/28 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
Abstract: Polymers include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety, photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 聚合物包括包含特定缩醛部分的单元和包含内酯部分的单元，含有这种聚合物的光致抗蚀剂组合物，涂有光致抗蚀剂组合物的基材和形成光刻图案的方法。 聚合物，组合物，方法和涂覆的基底在半导体器件的制造中具有特别的适用性。
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公开(公告)号：US20130244438A1
公开(公告)日：2013-09-19
申请号：US13607729
申请日：2012-09-09
Applicant: Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
Inventor： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
IPC: H01L21/308
CPC classification number: G03F7/11 , G03F7/0397 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/3081
Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供光刻胶外涂层组合物，涂覆有外涂层组合物的基材和通过负色调显影方法形成电子器件的方法。 组合物，涂覆的基底和方法在半导体器件的制造中特别适用。
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公开(公告)号：US08492075B2
公开(公告)日：2013-07-23
申请号：US12825150
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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