Abstract:
A display that contains a column spacer arrangement which takes advantage of a protrusion on a TFT substrate is provided. One set of column spacers is disposed on top of the protrusion, while a second set of column spacers of substantially the same height as the first set of column spacers are disposed throughout the display. In this way, the display is adequately protected against deformation from external forces while at the same maintaining enough room to allow for a liquid crystal to spread out during the manufacturing process.
Abstract:
A display may have a liquid crystal layer sandwiched between a thin-film transistor layer and a color filter layer. An upper polarizer may be placed on top of the thin-film transistor layer. A lower polarizer may be placed under the color filter layer. Components may be bonded to bond pads on the inner surface of the thin-film transistor layer using anisotropic conductive film. Bond quality may be assessed by probing probe pads that are coupled to the bond pads or by visually inspecting the bond pads through the thin-film transistor layer. Opaque masking material in the inactive area may be provided with openings to accommodate the bond pads. Additional opaque masking material may be placed on the underside of the upper polarizer and on the upper surface of the thin-film transistor layer to block the openings from view following visual inspection.
Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Abstract:
A display may have a thin-film transistor layer formed from a layer of thin-film, transistor circuitry on a substrate. The thin-film transistor layer may overlap a color filter layer. A portion of the thin-film transistor layer may extend past the color filter layer to for a ledge region. Components such as a flexible printed circuit and a display driver integrated circuit may be mounted to the thin-film transistor layer in the ledge region. The components may have alignment marks. The thin-film transistor layer may have a black masking layer that is patterned to form openings for display pixels. In a border area of the display that overlaps the ledge region, the thin-film transistor layer may have alignment mark viewing windows. Alignment marks formed from black masking material in the windows may be aligned with respective alignment marks on the components.
Abstract:
A display may have a thin-film transistor (TFT) layer and color filter layer. Light blocking structures in an inactive area of the display may prevent stray backlight from leaking out of the display. The thin-film transistor layer may have a first substrate, a first black masking layer, a planarization layer, and a layer of TFT circuitry on the planarization layer. The color filter layer may have a second substrate and a second black masking layer on the second substrate. Light-cured sealant may be formed between the TFT layer and the color filter layer. Gaps may be formed in the second black masking layer to allow light to cure the sealant. At least a portion of the TFT circuitry may serve to block stray backlight penetrating through the gaps in the second black masking layer during normal operation of the display.
Abstract:
A display may have a thin-film transistor layer and a color filter layer. The display may include light blocking structures formed on a transparent substrate. In one arrangement, a clear planarization layer may be formed over the light blocking structures. The thin-film transistor layer may be formed over the planarization layer. The color filter layer may be integrated with the thin-film transistor layer. At least light blocking structures and the planarization layer should be formed from high temperature resistance material. In another arrangement, the color filter layer may be formed on the light blocking structures. A clear planarization layer may then be formed over the color filter layer. The thin-film transistor layer may be formed on the planarization layer. In this arrangement, the color filter layer also needs to be formed from thermal resistance material.
Abstract:
A display may have a thin-film transistor layer and color filter layer. The display may have an active area and an inactive border area. Light blocking structures in the inactive area may prevent stray backlight from a backlight light guide plate from leaking out of the display. The thin-film transistor layer may have a clear substrate, a patterned black masking layer on the clear substrate, a clear planarization layer on the black masking layer, and a layer of thin-film transistor circuitry on the clear planarization layer. The black masking layer may be formed from black photoimageable polyimide. The clear planarization layer may be formed from spin-on glass. The light blocking structures may include a first layer formed from a portion of the black masking layer and a second layer such as a layer of black tape on the underside of the color filter layer.
Abstract:
One embodiment may take the form of a UV mask for use while curing sealant on LCD displays. The UV mask includes a mother glass and a UV mask layer on the mother glass. A UV absorption film is located adjacent the UV mask layer and an anti-reflection (AR) film is located adjacent the UV absorption film.
Abstract:
A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel. The transistors may be thin-film transistors having active areas, first and second source-drain terminals, and gates. Gate lines may be used to distribute gate control signals to the gates of the transistors in each row. Data lines that run perpendicular to the gate lines may be used to distribute image data along columns of pixels. The gate lines may be connected to gate line extensions that run parallel to the data lines. The data lines may each overlap a respective one of the gate line extensions. Vias may be used to connect the gate line extensions to the gate lines. The gate line extensions may all have the same length.
Abstract:
A display may have a thin-film transistor layer and a color filter layer. The display may include light blocking structures formed on a transparent substrate. In one arrangement, a clear planarization layer may be formed over the light blocking structures. The thin-film transistor layer may be formed over the planarization layer. The color filter layer may be integrated with the thin-film transistor layer. At least light blocking structures and the planarization layer should be formed from high temperature resistance material. In another arrangement, the color filter layer may be formed on the light blocking structures. A clear planarization layer may then be formed over the color filter layer. The thin-film transistor layer may be formed on the planarization layer. In this arrangement, the color filter layer also needs to be formed from thermal resistance material.