公开(公告)号：US20190051551A1

公开(公告)日：2019-02-14

申请号：US16121844

申请日：2018-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： XING LIN ,  DOUGLAS A. BUCHBERGER, JR. ,  XIAOPING ZHOU ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

公开(公告)号：US20180047542A1

公开(公告)日：2018-02-15

申请号：US15675682

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： ANDREW NGUYEN ,  XUE CHANG

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/321

Abstract: Apparatus for plasma processing are provided herein. In some embodiments, a process chamber includes: a chamber body having a processing volume within; a dielectric adapter ring disposed atop the chamber body; a multi-zone showerhead disposed atop the dielectric adapter ring to provide process gas to the processing volume; and an inductively-coupled RF coil disposed about an upper portion of the chamber body to couple RF energy to the processing volume.

公开(公告)号：US20180046206A1

公开(公告)日：2018-02-15

申请号：US15673015

申请日：2017-08-09

Applicant: APPLIED MATERIALS, INC.

Inventor： ANDREW NGUYEN ,  XUE CHANG

IPC: G05D16/20 ,  C23C16/455

Abstract: Methods and apparatus for controlling gas flow to a process chamber are disclosed herein. In some embodiments, a processing system includes a first process chamber having a first gas input; a first gas break disposed upstream of the first gas input; a first adjustable valve disposed upstream of the first gas break; and a first isolation valve disposed upstream of the first adjustable valve. The processing system may further include a second process chamber having a second gas input; a second gas break disposed upstream of the second gas input; a second adjustable valve disposed upstream of the second gas break; and a second isolation valve disposed upstream of the second adjustable valve. A shared gas source may be disposed upstream of the first isolation valve and the second isolation valve to provide one or more gases to the first process chamber and to the second process chamber.

公开(公告)号：US20140366953A1

公开(公告)日：2014-12-18

申请号：US14276289

申请日：2014-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： JARED AHMAD LEE ,  DMITRY LUBOMIRSKY ,  MARTIN JEFF SALINAS ,  ANDREW NGUYEN ,  TOM K. CHO ,  ERIC A. ENGLHARDT ,  FERNANDO SILVEIRA

IPC: F16K3/02 ,  B08B9/032

CPC classification number: B08B9/0325 ,  F16K3/02 ,  F16K51/02 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0419 ,  Y10T137/4259

Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.

Abstract translation: 本文提供了在基板处理室中使用的节流闸阀中减小颗粒的方法和装置。 在一些实施例中，用于处理室的闸阀包括具有从主体的第一表面到相对的第二表面穿过的开口的主体; 从开口的侧壁延伸到主体中的口袋; 可移动地设置在所述口袋内的封闭位置，所述关闭位置密封所述开口和露出所述开口的打开位置，并完全将所述门置于所述口袋内; 以及设置在所述闸阀中的多个气体端口，其构造成将气流引导到与所述开口流体连接的所述闸阀的一部分。

公开(公告)号：US20130134129A1

公开(公告)日：2013-05-30

申请号：US13751229

申请日：2013-01-28

Applicant: Applied Materials, Inc.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: C23C16/505 ,  B44C1/22

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract translation: 本文提供了等离子体处理的方法和装置。 在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在所述处理室附近的将RF能量耦合到所述处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。