公开(公告)号：US20240177969A1

公开(公告)日：2024-05-30

申请号：US18059222

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yue GUO ,  Yang YANG ,  Fernando SILVEIRA ,  A.N.M. Wasekul AZAD

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32146 ,  H01J2237/3341

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having three MOSFETs and three series-connected capacitors. The capacitors are connected across a DC power supply and, depending on the value of the capacitors, voltage across each of them may be varied. Each of the top two capacitors is followed by a diode. The bottom capacitor is connected to the ground. The drain terminal of each MOSFET is connected to higher potential end of the series connected capacitors. Each MOSFET is followed by a diode and the cathode ends of the diodes are connected together. An electrode is connected between the common cathode and ground.

公开(公告)号：US20220415614A1

公开(公告)日：2022-12-29

申请号：US17361178

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for boosting a voltage of an electrode in a processing chamber. An example plasma processing system includes a processing chamber, a plurality of switches, an electrode disposed in the processing chamber, a voltage source, and a capacitive element. The voltage source is selectively coupled to the electrode via one of the plurality of switches. The capacitive element is selectively coupled to the electrode via one of the plurality of switches. The capacitive element and the voltage source are coupled to the electrode in parallel. The plurality of switches are configured to couple the capacitive element and the voltage source to the electrode during a first phase, couple the capacitive element and the electrode to a ground node during a second phase, and couple the capacitive element to the electrode during a third phase.

公开(公告)号：US20220399189A1

公开(公告)日：2022-12-15

申请号：US17346103

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a radio-frequency (RF) generation system. The RF generation system generally includes an RF generator, and a vacuum interrupter configured to selectively decouple the RF generator from a bias electrode of a plasma chamber based on detection of a fault condition associated with operation of the plasma chamber.

公开(公告)号：US20220359161A1

公开(公告)日：2022-11-10

申请号：US17314173

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Krishna Kumar KUTTANNAIR ,  Jie YU ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40

Abstract: Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

公开(公告)号：US20220037121A1

公开(公告)日：2022-02-03

申请号：US17315234

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20200321186A1

公开(公告)日：2020-10-08

申请号：US16373254

申请日：2019-04-02

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Yang YANG ,  Kartik RAMASWAMY ,  Manivannan THOTHADRI ,  Yue GUO

IPC: H01J37/063 ,  H01J37/077 ,  H01J37/32

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching. In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. The electrode has an electron emitting surface disposed at a nonparallel angle relative to a major axis of a substrate assembly. The EBRPE apparatus may further comprise a capacitive or inductive coupled plasma generator. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce directional etching of the substrate. During the EBPRE process, the substrate or electrode is actuated through a process volume during the etching.

公开(公告)号：US20250087462A1

公开(公告)日：2025-03-13

申请号：US18244202

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  A N M Wasekul AZAD ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to a method for processing a substrate in a plasma processing system. The method generally includes: sensing, via one or more sensors, one or more intermodulation or harmonic components of a signal at a node coupled to a plasma chamber; and controlling one or more signal processing devices of the plasma processing system to process the substrate based on the one or more intermodulation or harmonic components and in accordance with a frequency domain configuration identified by analyzing one or more substrate processing metrics.

公开(公告)号：US20240162008A1

公开(公告)日：2024-05-16

申请号：US17988083

申请日：2022-11-16

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG ,  Nicolas John BRIGHT ,  A N M Wasekul AZAD

IPC: H01J37/32 ,  H03H11/28

CPC classification number: H01J37/32183 ,  H03H11/28 ,  H01J2237/327

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network comprises a first sensor operably connected to an input of the matching network and an RF generator operable at a first frequency and a second sensor operably connected to an output of the matching network and the plasma processing chamber. The first sensor and the second sensor are configured to measure impedance during an RF generator pulse on time. A variable capacitor is connected to the first sensor and the second sensor, and a controller is configured to tune the at least one variable capacitor of the matching network during the RF generator pulse on time based on impedance values measured during at least one of pulse on states or pulse off states of a pulse voltage waveform generator connected to the matching network or an RF signal of another RF generator operable at a second frequency different from the first frequency.

公开(公告)号：US20240152114A1

公开(公告)日：2024-05-09

申请号：US17980378

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Jie YU ,  Yang YANG ,  Farhad MOGHADAM

IPC: G05B19/414 ,  G05B19/18

CPC classification number: G05B19/4145 ,  G05B19/182 ,  G05B2219/45031

Abstract: Embodiments provided herein generally include apparatus and methods, controlled by flexible tuning algorithms, for generating a plasma in a plasma processing chamber. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for evaluation and refinement of the tuning algorithms used. This enhances the productivity of batch processing of a plurality of semiconductor wafers during the manufacturing process since the tuning algorithms can be modified on the fly during processing thereof. The tuning algorithms may be recorded, reused and/or modified for controlling future plasma processing.

公开(公告)号：US20240120178A1

公开(公告)日：2024-04-11

申请号：US17963146

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Farhad MOGHADAM ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H03H7/40 ,  H01J37/32091 ,  H01J37/321

Abstract: Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.