公开(公告)号：US20250046576A1

公开(公告)日：2025-02-06

申请号：US18365261

申请日：2023-08-04

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT

IPC: H01J37/32

Abstract: Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

公开(公告)号：US20230402254A1

公开(公告)日：2023-12-14

申请号：US17835864

申请日：2022-06-08

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO ,  Fernando SILVEIRA

IPC: H01J37/32 ,  H03K17/687

CPC classification number: H01J37/32091 ,  H03K17/687 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

公开(公告)号：US20230343555A1

公开(公告)日：2023-10-26

申请号：US17726930

申请日：2022-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yang YANG ,  Nicolas John BRIGHT

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32146 ,  H01J37/32935 ,  H01J37/32183 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/334

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

公开(公告)号：US20230170194A1

公开(公告)日：2023-06-01

申请号：US17537107

申请日：2021-11-29

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Haitao WANG ,  Kartik RAMASWAMY

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32174 ,  H01J2237/3341 ,  H01J37/32091

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for controlling ion energy distribution in a processing chamber. One embodiment of the present disclosure is directed to a method for plasma processing. The method generally includes: determining a voltage and/or power associated with a bias signal to be applied to a first electrode of a processing chamber, the voltage being determined based on a pressure inside a processing region of the processing chamber such that the voltage is insufficient to generate a plasma inside the chamber by application of the voltage and/or power to the first electrode; applying the first bias signal in accordance with the determined voltage and/or power to the first electrode; and applying a second bias signal to a second electrode of the processing chamber, wherein the second bias signal is configured to generate a plasma in the processing region and the first bias is applied while the second bias is applied.

公开(公告)号：US20220406567A1

公开(公告)日：2022-12-22

申请号：US17349763

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pulsed-voltage waveform that includes coupling a main voltage source to an electrode during a first phase of a process of generating a pulsed-voltage waveform, wherein the electrode is disposed within a processing chamber, coupling a ground node to the electrode during a second phase of the process of generating the pulsed-voltage waveform, coupling a first compensation voltage source to the electrode during a third phase of the process of generating the pulsed-voltage waveform, and coupling a second compensation voltage source to the electrode during a fourth phase of the process of generating the pulsed-voltage waveform.

公开(公告)号：US20220351969A1

公开(公告)日：2022-11-03

申请号：US17624174

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav Sridhar CITLA ,  Joshua Alan RUBNITZ ,  Jethro TANNOS ,  Srinivas D. NEMANI ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/505 ,  H01J37/32 ,  C23C16/30

Abstract: Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

公开(公告)号：US20190221437A1

公开(公告)日：2019-07-18

申请号：US16239170

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01J37/305 ,  H01L21/67

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

公开(公告)号：US20190057862A1

公开(公告)日：2019-02-21

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Eswaranand VENKATASUBRAMANIAN ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20180366306A1

公开(公告)日：2018-12-20

申请号：US16113736

申请日：2018-08-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20180342375A1

公开(公告)日：2018-11-29

申请号：US15606739

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Kartik RAMASWAMY ,  Michael G. CHAFIN ,  Yang YANG ,  Anilkumar RAYAROTH ,  Lu LIU

IPC: H01J37/32

Abstract: Embodiments of the disclosure relate to apparatus and method for tunable a plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.