公开(公告)号：US20240371605A1

公开(公告)日：2024-11-07

申请号：US18144156

申请日：2023-05-05

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  A N M Wasekul AZAD ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40 ,  H05H1/46

Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance; a second impedance coupled to the first impedance; a transformer having a primary winding and a secondary winding magnetically coupled to the primary winding, wherein the primary winding is coupled to a control input for the tuning circuit; and a signal path coupled in parallel with the first impedance or the second impedance, wherein the secondary winding is part of the signal path coupled in parallel with the first impedance or the second impedance.

公开(公告)号：US20160215883A1

公开(公告)日：2016-07-28

申请号：US14693254

申请日：2015-04-22

Applicant: Applied Materials, Inc.

Inventor： ANDREW NGUYEN ,  Bradley J. HOWARD ,  Nicolas J. BRIGHT

IPC: F16J10/02

CPC classification number: F16J10/02 ,  H01J37/32834 ,  H01J37/32899

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

Abstract translation: 公开了一种用于处理衬底的设备，并且在一个实施例中包括具有穿过其中形成的两个开口的双室壳体，与形成在双室壳体中的两个开口中的一个共轴对准的第一泵接口构件和第二泵接口 构件与形成在双室壳体中的两个开口中的另一个共轴对准，其中每个泵接口构件包括与两个开口的中心线同心的三个通道。

公开(公告)号：US20240412947A1

公开(公告)日：2024-12-12

申请号：US18207526

申请日：2023-06-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance coupled between a first terminal and a second terminal of the tuning circuit, wherein the first terminal is coupled to a generator and the second terminal is coupled to a load; a second impedance coupled between the first impedance of the tuning circuit and a reference potential node; and a signal path coupled to the first impedance or the second impedance, the signal path comprising an inductive element and a first switch coupled to the inductive element, wherein a control input of the first switch is coupled to a control input of the tuning circuit configured to receive a control signal associated with a pulsed voltage (PV) waveform.

公开(公告)号：US20240079212A1

公开(公告)日：2024-03-07

申请号：US17930139

申请日：2022-09-07

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT ,  Yang YANG ,  A N M Wasekul AZAD

IPC: H01J37/32 ,  G01R27/02 ,  H01L21/66

CPC classification number: H01J37/32183 ,  G01R27/02 ,  H01L22/20 ,  H01J2237/3341

Abstract: Embodiments of the disclosure include a method of processing a substrate in a plasma processing system, comprising delivering an RF signal, by an RF generator, through an RF match to an electrode assembly disposed within the plasma processing system, wherein while delivering the RF signal the RF match is set to a first matching point, and delivering a voltage waveform, by a waveform generator, to the electrode assembly disposed within the plasma processing system while the RF signal is delivered to the electrode assembly. The method includes receiving, by the RF match, a synchronization signal from a RF generator or the waveform generator, measuring, by an output sensor of the RF match, a first set of impedance related data of the plasma processing system over a first time period, the first time period beginning after a first delay triggered by a first portion of a first waveform pulse of the synchronization signal, measuring, by the output sensor of the RF match, a second set of impedance related data of the plasma processing system over a second time period, the second time period beginning after a second delay triggered by the first portion of the first waveform pulse of the synchronization signal, calculating, by the RF match, a combined impedance parameter based on the measured first set of impedance related data and the measured second set of impedance related data, and adjusting a matching parameter within the RF match based on the calculated combined impedance parameter to achieve a second matching point.

公开(公告)号：US20250046576A1

公开(公告)日：2025-02-06

申请号：US18365261

申请日：2023-08-04

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT

IPC: H01J37/32

Abstract: Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

公开(公告)号：US20220213959A1

公开(公告)日：2022-07-07

申请号：US17656030

申请日：2022-03-23

Applicant: Applied Materials, Inc.

Inventor： Bradley J. HOWARD ,  Nicolas J. BRIGHT ,  Andrew NGUYEN

IPC: F16J10/02 ,  H01J37/32

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

公开(公告)号：US20240290578A1

公开(公告)日：2024-08-29

申请号：US18115537

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Yang YANG ,  Nicolas J. BRIGHT

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/321

Abstract: A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.

公开(公告)号：US20240177968A1

公开(公告)日：2024-05-30

申请号：US18059658

申请日：2022-11-29

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yue GUO ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32128

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for processing a substrate in a plasma processing system. The apparatus includes a pulse voltage (PV) waveform generator comprising at least one synchronization signal and a plurality of pulsers to provide a plurality of TTL inputs. The PV waveform generator generates a waveform containing pulses or bursts which contain micropulses corresponding to the plurality of TTL input signals and the at least one synchronization signal. The method includes receiving a first TTL input signal and a synchronization waveform signal from a controller, delivering a first micropulse to an electrode assembly after receiving the first TTL input signal and synchronization signal, and delivering a second micropulse to the electrode assembly after receiving the second TTL input signal and the synchronization signal.

公开(公告)号：US20250087462A1

公开(公告)日：2025-03-13

申请号：US18244202

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  A N M Wasekul AZAD ,  Nicolas J. BRIGHT ,  Yang YANG

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to a method for processing a substrate in a plasma processing system. The method generally includes: sensing, via one or more sensors, one or more intermodulation or harmonic components of a signal at a node coupled to a plasma chamber; and controlling one or more signal processing devices of the plasma processing system to process the substrate based on the one or more intermodulation or harmonic components and in accordance with a frequency domain configuration identified by analyzing one or more substrate processing metrics.

公开(公告)号：US20170178758A1

公开(公告)日：2017-06-22

申请号：US15369219

申请日：2016-12-05

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Paul CONNORS ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Ziqing DUAN ,  Nicolas J. BRIGHT ,  Feng BI

IPC: G21F3/00 ,  C23C16/458 ,  C23C16/50 ,  C23C16/448

CPC classification number: C23C16/448 ,  C23C16/50 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.