公开(公告)号：US20240153741A1

公开(公告)日：2024-05-09

申请号：US17983926

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Daniel Sang BYUN ,  Rajinder DHINDSA ,  Keith HERNANDEZ

IPC: H01J37/32

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32091 ,  H01J2237/3341

Abstract: Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of first voltage pulses to an electrode assembly after receiving a first portion of the first synchronization waveform signal, wherein at least one first parameter of the first voltage pulses is set to a first value based on a first waveform parameter within the first portion of the first synchronization waveform signal, and delivering a second burst of second voltage pulses to the electrode assembly after receiving a second portion of the first synchronization waveform signal, wherein the at least one first parameter of the first voltage pulses is set to a second value based on a difference in the first waveform parameter within the second portion of the first synchronization waveform signal.

公开(公告)号：US20240321610A1

公开(公告)日：2024-09-26

申请号：US18676429

申请日：2024-05-28

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  H03K17/955

CPC classification number: H01L21/67259 ,  H01J37/32477 ,  H01J37/3288 ,  H01L22/12 ,  H03K17/955 ,  H01J2237/022

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20220037121A1

公开(公告)日：2022-02-03

申请号：US17315234

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20240030002A1

公开(公告)日：2024-01-25

申请号：US18375886

申请日：2023-10-02

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32183 ,  H01L21/31116 ,  H01J37/32577 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/2007

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20220037119A1

公开(公告)日：2022-02-03

申请号：US17315256

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying Cui

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20220037120A1

公开(公告)日：2022-02-03

申请号：US17315259

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Jonathan KOLBECK ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20210391146A1

公开(公告)日：2021-12-16

申请号：US16899326

申请日：2020-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Timothy Joseph FRANKLIN ,  Rajinder DHINDSA ,  Daniel Sang BYUN ,  Carlaton WONG ,  Joseph PERRY ,  James Hugh ROGERS

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode disposed in a substrate support of the etch process chamber at a first frequency of about 200 kHz to about 700 kHz over a first period to create a plasma in a process volume of the etch process chamber, wherein a conductance liner surrounds the process volume to provide a ground path for an upper electrode of the etch process chamber; and pulsing RF power from the RF bias power supply to the lower electrode at a second frequency of about 2 MHz to about 13.56 MHz over the first period.

公开(公告)号：US20210287881A1

公开(公告)日：2021-09-16

申请号：US17156957

申请日：2021-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Timothy Joseph FRANKLIN ,  Carlaton WONG ,  Reyn Tetsuro WAKABAYASHI ,  Daniel Sang BYUN ,  Steven BABAYAN

IPC: H01J37/32 ,  H01L21/687

Abstract: An apparatus for processing substrates that includes a process chamber with a process volume located above a substrate support assembly surrounded by an edge ring, an upper electrode located above the process volume and a conductive tuning ring surrounding the upper electrode and in electrical contact with the upper electrode. The conductive tuning ring has at least one gas port on a lower surface above the edge ring. The conductive tuning may also have at least one stepped portion on the lower surface that forms an extended bottom surface. In some embodiments, the extended bottom surface may slant radially inwardly or radially outwardly. In some embodiments, the extended bottom surface may have one or more radiused edges.

公开(公告)号：US20240145220A1

公开(公告)日：2024-05-02

申请号：US17974088

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Jaeyong CHO ,  Rajinder DHINDSA ,  Daniel Sang BYUN ,  Vladimir KNYAZIK

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01L21/6833

Abstract: Examples of a substrate support assembly are provided herein. In some examples, the substrate support assembly has a ceramic electrostatic chuck having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic electrostatic chuck includes an electrode embedded in the ceramic electrostatic chuck. The substrate support assembly has a cooling plate disposed under the second side of the ceramic electrostatic chuck, wherein the cooling plate includes an inner portion separated from an outer portion. The substrate support assembly has a bond layer coupling the ceramic electrostatic chuck to the cooling plate, wherein the bond layer is of a first material in the outer portion of the cooling plate and of a second material in the inner portion of the cooling plate, and wherein the first material has a greater thermal conductivity than that of the second material.

公开(公告)号：US20230030927A1

公开(公告)日：2023-02-02

申请号：US17959074

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.