公开(公告)号：US20210328036A1

公开(公告)日：2021-10-21

申请号：US17360045

申请日：2021-06-28

Applicant: ASM IP Holding B.V.

Inventor： Dong Li ,  Peng-Fu Hsu ,  Petri Raisanen ,  Moataz Bellah Mousa ,  Ward Johnson ,  Xichong Chen

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/49

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20170154778A1

公开(公告)日：2017-06-01

申请号：US15429924

申请日：2017-02-10

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US20160196977A1

公开(公告)日：2016-07-07

申请号：US14987413

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US20160115590A1

公开(公告)日：2016-04-28

申请号：US14987420

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US08841182B1

公开(公告)日：2014-09-23

申请号：US13829856

申请日：2013-03-14

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Willem Maes ,  Suvi Haukka ,  Eric Shero ,  Tom E. Blomberg ,  Dong Li

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施例中，包括碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包括钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，第二源化学物质包括金属和碳，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 处理可以在金属碳化物膜上形成覆盖层。

公开(公告)号：US20230298902A1

公开(公告)日：2023-09-21

申请号：US18121064

申请日：2023-03-14

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero

IPC: H01L21/3205 ,  H01L29/40 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/32051 ,  H01L29/401 ,  H01L21/02046 ,  H01L21/28556

Abstract: Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the temperature of the reaction chamber may be raised from the first temperature to a second temperature. In some embodiments, the substrate in the reaction chamber may be contacted with a second oxygen-free molybdenum halide reactant at the second temperature, wherein said contacting with the second oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the deposition at the second temperature may be repeated until a molybdenum-containing film of desired thickness is formed.

公开(公告)号：US20220228264A1

公开(公告)日：2022-07-21

申请号：US17714383

申请日：2022-04-06

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US11306395B2

公开(公告)日：2022-04-19

申请号：US15636307

申请日：2017-06-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Robert Brennan Milligan ,  William George Petro ,  Eric Wang ,  Fred Alokozai ,  Dong Li ,  Hao Wang ,  Melvin Verbaas ,  Luping Li

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/46 ,  C23C16/44

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

公开(公告)号：US20140273510A1

公开(公告)日：2014-09-18

申请号：US13829856

申请日：2013-03-14

Applicant: ASM IP HOLDING B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Willem Maes ,  Suvi Haukka ,  Eric Shero ,  Tom E. Blomberg ,  Dong Li

IPC: H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是硅烷或硼烷，其至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

公开(公告)号：US20140220247A1

公开(公告)日：2014-08-07

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。