公开(公告)号：US20190163866A1

公开(公告)日：2019-05-30

申请号：US16265367

申请日：2019-02-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC: G06F17/50 ,  G03F7/20 ,  G03F1/36 ,  G03F1/00

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

公开(公告)号：US11409203B2

公开(公告)日：2022-08-09

申请号：US17326481

申请日：2021-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu Cao ,  Yen-Wen Lu ,  Peng Liu ,  Rafael C. Howell ,  Roshni Biswas

IPC: G03F7/20 ,  G03F1/36

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US10685158B2

公开(公告)日：2020-06-16

申请号：US15529908

申请日：2015-11-24

Applicant: ASML Netherlands B.V.

Inventor： Peng Liu

IPC: G06F30/367 ,  G03F7/20 ,  G06F119/18

Abstract: Disclosed herein is a computer-implemented method of image simulation for a device manufacturing process, the method comprising: identifying regions of uniform optical properties from a portion or an entirety of a substrate or a patterning device, wherein optical properties are uniform within each of the regions; obtaining an image for each of the regions, wherein the image is one that would be formed from the substrate if the entirety of the substrate or the patterning device has the same uniform optical properties as that region; forming a stitched image by stitching the image for each of the regions according to locations of the regions in the portion or the entirety of the substrate of the patterning device; forming an adjusted image by applying adjustment to the stitched image for at least partially correcting for or at least partially imitating an effect of finite sizes of the regions.

公开(公告)号：US10198549B2

公开(公告)日：2019-02-05

申请号：US15174732

申请日：2016-06-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

公开(公告)号：US08938694B2

公开(公告)日：2015-01-20

申请号：US14081386

申请日：2013-11-15

Applicant: ASML Netherlands B.V.

Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。