公开(公告)号：US12055904B2

公开(公告)日：2024-08-06

申请号：US17293373

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Boris Menchtchikov ,  Cyrus Emil Tabery ,  Yi Zou ,  Chenxi Lin ,  Yana Cheng ,  Simon Philip Spencer Hastings ,  Maxime Philippe Frederic Genin

IPC: G06F30/10 ,  G03F7/00 ,  G05B13/02 ,  G05B13/04 ,  G06F30/27 ,  G06N3/045 ,  G06N3/08 ,  G06F119/02 ,  G06F119/22

CPC classification number: G05B13/048 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/706837 ,  G05B13/027 ,  G05B13/042 ,  G06F30/10 ,  G06F30/27 ,  G06N3/045 ,  G06N3/08 ,  G06F2119/02 ,  G06F2119/22

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US11803127B2

公开(公告)日：2023-10-31

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi Lin ,  Cyrus Emil Tabery ,  Hakki Ergün Cekli ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Yi Zou ,  Yana Cheng ,  Maxime Philippe Frederic Genin ,  Tzu-Chao Chen ,  Davit Harutyunyan ,  Youping Zhang

IPC: G03F7/00 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

CPC classification number: G03F7/705 ,  G05B13/027 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/32193 ,  G05B2219/32368 ,  G05B2219/45031

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US11281110B2

公开(公告)日：2022-03-22

申请号：US16973395

申请日：2019-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Van Dongen ,  Wim Tjibbo Tel ,  Sarathi Roy ,  Yichen Zhang ,  Andrea Cavalli ,  Bart Laurens Sjenitzer ,  Simon Philip Spencer Hastings

IPC: G03F7/20

Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.

公开(公告)号：US11086229B2

公开(公告)日：2021-08-10

申请号：US16497826

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.