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公开(公告)号：US11754931B2
公开(公告)日：2023-09-12
申请号：US17603870
申请日：2020-03-18
发明人： Roy Werkman , David Frans Simon Deckers , Simon Philip Spencer Hastings , Jeffrey Thomas Ziebarth , Samee Ur Rehman , Davit Harutyunyan , Chenxi Lin , Yana Cheng
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70508 , G03F7/70616
摘要： A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.
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公开(公告)号：US11947266B2
公开(公告)日：2024-04-02
申请号：US17297171
申请日：2019-11-14
发明人： Nicolaas Petrus Marcus Brantjes , Matthijs Cox , Boris Menchtchikov , Cyrus Emil Tabery , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxim Philippe Frederic Genin
CPC分类号： G03F7/70491 , G03F7/70633 , G03F9/7046
摘要： A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.
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公开(公告)号：US12055904B2
公开(公告)日：2024-08-06
申请号：US17293373
申请日：2019-10-30
发明人： Youping Zhang , Boris Menchtchikov , Cyrus Emil Tabery , Yi Zou , Chenxi Lin , Yana Cheng , Simon Philip Spencer Hastings , Maxime Philippe Frederic Genin
IPC分类号： G06F30/10 , G03F7/00 , G05B13/02 , G05B13/04 , G06F30/27 , G06N3/045 , G06N3/08 , G06F119/02 , G06F119/22
CPC分类号： G05B13/048 , G03F7/705 , G03F7/70616 , G03F7/706837 , G05B13/027 , G05B13/042 , G06F30/10 , G06F30/27 , G06N3/045 , G06N3/08 , G06F2119/02 , G06F2119/22
摘要： A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.
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4.发明授权公开(公告)号：US11803127B2
公开(公告)日：2023-10-31
申请号：US17295193
申请日：2019-11-04
发明人： Chenxi Lin , Cyrus Emil Tabery , Hakki Ergün Cekli , Simon Philip Spencer Hastings , Boris Menchtchikov , Yi Zou , Yana Cheng , Maxime Philippe Frederic Genin , Tzu-Chao Chen , Davit Harutyunyan , Youping Zhang
IPC分类号： G03F7/00 , G05B13/02 , G05B19/418 , H01L21/66
CPC分类号： G03F7/705 , G05B13/027 , G05B19/41875 , H01L22/20 , G05B2219/32193 , G05B2219/32368 , G05B2219/45031
摘要： A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.
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公开(公告)号：US12044980B2
公开(公告)日：2024-07-23
申请号：US17296316
申请日：2019-10-30
发明人： Abraham Slachter , Wim Tjibbo Tel , Daan Maurits Slotboom , Vadim Yourievich Timoshkov , Koen Wilhelmus Cornelis Adrianus Van Der Straten , Boris Menchtchikov , Simon Philip Spencer Hastings , Cyrus Emil Tabery , Maxime Philippe Frederic Genin , Youping Zhang , Yi Zou , Chenxi Lin , Yana Cheng
IPC分类号： G05B19/418 , G03F7/00
CPC分类号： G03F7/70625 , G03F7/70616 , G05B19/4188 , G03F7/70525
摘要： A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
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