REFRESH MANAGEMENT FOR MEMORY
    11.
    发明申请

    公开(公告)号:US20220122652A1

    公开(公告)日:2022-04-21

    申请号:US17564575

    申请日:2021-12-29

    Abstract: A memory controller interfaces with a random access memory over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the memory. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.

    REFRESH MANAGEMENT FOR DRAM
    12.
    发明申请

    公开(公告)号:US20210358540A1

    公开(公告)日:2021-11-18

    申请号:US16875281

    申请日:2020-05-15

    Abstract: A memory controller interfaces with a dynamic random access memory (DRAM) over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the DRAM. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.

    COMMAND REPLAY FOR NON-VOLATILE DUAL INLINE MEMORY MODULES

    公开(公告)号:US20210200468A1

    公开(公告)日:2021-07-01

    申请号:US16730092

    申请日:2019-12-30

    Abstract: Memory access commands are placed in a memory interface queue and transmitted from the memory interface queue to a heterogeneous memory channel coupled to a volatile dual in-line memory module (DIMM) and a non-volatile DIMM. Selected memory access commands that are placed in the memory interface queue are stored in a replay queue. The non-volatile reads that are placed in the memory interface queue are in a non-volatile command queue (NV queue). The method detects, based on information received over the heterogeneous memory channel, that an error has occurred requiring a recovery sequence. In response to the error, the method initiates the recovery sequence including (i) transmitting selected memory access commands that are stored in the replay queue, and (ii) transmitting non-volatile reads that are stored in the NV queue.

    Refresh management for memory
    14.
    发明授权

    公开(公告)号:US11694739B2

    公开(公告)日:2023-07-04

    申请号:US17564575

    申请日:2021-12-29

    CPC classification number: G11C11/40615

    Abstract: A memory controller interfaces with a random access memory over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the memory. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.

    MEMORY CALIBRATION SYSTEM AND METHOD

    公开(公告)号:US20220028450A1

    公开(公告)日:2022-01-27

    申请号:US16938855

    申请日:2020-07-24

    Abstract: A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

    Error recovery for non-volatile memory modules

    公开(公告)号:US12141038B2

    公开(公告)日:2024-11-12

    申请号:US18084350

    申请日:2022-12-19

    Abstract: A memory controller includes a command queue, a memory interface queue, at least one storage queue, and a replay control circuit. The command queue has a first input for receiving memory access commands. The memory interface queue receives commands selected from the command queue and couples to a heterogeneous memory channel which is coupled to at least one non-volatile storage class memory (SCM) module. The at least one storage queue stores memory access commands that are placed in the memory interface queue. The replay control circuit detects that an error has occurred requiring a recovery sequence, and in response to the error, initiates the recovery sequence. In the recovery sequence, the replay control circuit transmits selected memory access commands from the at least one storage queue by grouping non-volatile read commands together separately from all pending volatile reads, volatile writes, and non-volatile writes.

    ERROR RECOVERY FOR NON-VOLATILE MEMORY MODULES

    公开(公告)号:US20230125792A1

    公开(公告)日:2023-04-27

    申请号:US18084350

    申请日:2022-12-19

    Abstract: A memory controller includes a command queue, a memory interface queue, at least one storage queue, and a replay control circuit. The command queue has a first input for receiving memory access commands. The memory interface queue receives commands selected from the command queue and couples to a heterogeneous memory channel which is coupled to at least one non-volatile storage class memory (SCM) module. The at least one storage queue stores memory access commands that are placed in the memory interface queue. The replay control circuit detects that an error has occurred requiring a recovery sequence, and in response to the error, initiates the recovery sequence. In the recovery sequence, the replay control circuit transmits selected memory access commands from the at least one storage queue by grouping non-volatile read commands together separately from all pending volatile reads, volatile writes, and non-volatile writes.

    Refresh management for DRAM
    18.
    发明授权

    公开(公告)号:US11222685B2

    公开(公告)日:2022-01-11

    申请号:US16875281

    申请日:2020-05-15

    Abstract: A memory controller interfaces with a dynamic random access memory (DRAM) over a memory channel. A refresh control circuit monitors an activate counter which counts a rolling number of activate commands sent over the memory channel to a memory region of the DRAM. In response to the activate counter being above an intermediate management threshold value, the refresh control circuit only issue a refresh management (RFM) command if there is no REF command currently held at the refresh command circuit for the memory region.

    Command replay for non-volatile dual inline memory modules

    公开(公告)号:US11137941B2

    公开(公告)日:2021-10-05

    申请号:US16730092

    申请日:2019-12-30

    Abstract: Memory access commands are placed in a memory interface queue and transmitted from the memory interface queue to a heterogeneous memory channel coupled to a volatile dual in-line memory module (DIMM) and a non-volatile DIMM. Selected memory access commands that are placed in the memory interface queue are stored in a replay queue. The non-volatile reads that are placed in the memory interface queue are in a non-volatile command queue (NV queue). The method detects, based on information received over the heterogeneous memory channel, that an error has occurred requiring a recovery sequence. In response to the error, the method initiates the recovery sequence including (i) transmitting selected memory access commands that are stored in the replay queue, and (ii) transmitting non-volatile reads that are stored in the NV queue.

    DYNAMIC PER-BANK AND ALL-BANK REFRESH
    20.
    发明申请

    公开(公告)号:US20190196987A1

    公开(公告)日:2019-06-27

    申请号:US15851324

    申请日:2017-12-21

    CPC classification number: G06F13/1636 G06F13/1642 G06F13/4234 G11C11/40603

    Abstract: Systems, apparatuses, and methods for performing efficient memory accesses in a computing system are disclosed. In various embodiments, a computing system includes computing resources and a memory controller coupled to a memory device. The memory controller determines a memory request targets a given rank of multiple ranks. The memory controller determines a predicted latency for the given rank as an amount of time the pending queue in the memory controller for storing outstanding memory requests does not store any memory requests targeting the given rank. The memory controller determines the total bank latency as an amount of time for refreshing a number of banks which have not yet been refreshed in the given rank with per-bank refresh operations. If there are no pending requests targeting the given rank, each of the predicted latency and the total bank latency is used to select between per-bank and all-bank refresh operations.

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