公开(公告)号：US20210202473A1

公开(公告)日：2021-07-01

申请号：US17180174

申请日：2021-02-19

Applicant: Akoustis, Inc.

Inventor： Shawn R. GIBB ,  David AICHELE ,  Ramakrishna VETURY ,  Mark D. BOOMGARDEN ,  Jeffrey B. SHEALY

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L27/20 ,  H01L29/20 ,  H01L29/417 ,  H01L29/80 ,  H03F3/19 ,  H03F3/21 ,  H03H3/08 ,  H03H9/46 ,  H04B1/44

Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

公开(公告)号：US20190081611A1

公开(公告)日：2019-03-14

申请号：US15701307

申请日：2017-09-11

Applicant: Akoustis, Inc.

Inventor： Ramakrishna VETURY ,  Shawn R. GIBB ,  Mark D. BOOMGARDEN ,  Jeffrey B. SHEALY

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

Abstract: A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.

公开(公告)号：US20180123542A1

公开(公告)日：2018-05-03

申请号：US15341218

申请日：2016-11-02

Applicant: Akoustis, Inc.

Inventor： Ramakrishna VETURY ,  Alexander Y. FELDMAN ,  Michael D. HODGE ,  Art GEISS ,  Shawn R. GIBB ,  Mark D. BOOMGARDEN ,  Michael P. LEWIS ,  Pinal PATEL ,  Jeffrey B. SHEALY

IPC: H03H3/04 ,  H03H9/17 ,  H03H9/13 ,  H03H9/56

CPC classification number: H03H3/04 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/0514 ,  H03H9/1035 ,  H03H9/131 ,  H03H9/132 ,  H03H9/133 ,  H03H9/171 ,  H03H9/174 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/0414 ,  H03H2003/0428

Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.