Method of manufacture of semiconductor device and conductive compositions used therein
    19.
    发明授权
    Method of manufacture of semiconductor device and conductive compositions used therein 失效
    其中使用的半导体器件和导电组合物的制造方法

    公开(公告)号:US07556748B2

    公开(公告)日:2009-07-07

    申请号:US11106329

    申请日:2005-04-14

    IPC分类号: H01B1/22

    摘要: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

    摘要翻译: 本发明涉及一种厚膜导电组合物,其包含:(a)导电银粉; (b)含锌添加剂,其中所述含锌添加剂的粒度在7纳米至小于100纳米的范围内; (c)玻璃料,其中所述玻璃料的软化点在300-600℃的范围内。 分散在(d)有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法,所述结构元件由在半导体主表面上形成的具有pn结和绝缘膜的半导体构成,包括以下步骤:(a)施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和(b)烧制所述半导体,绝缘膜和厚膜组合物以形成电极。