公开(公告)号：US09054242B2

公开(公告)日：2015-06-09

申请号：US13022799

申请日：2011-02-08

申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

IPC分类号： H01L31/0224 ,  H01L31/18 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24

CPC分类号： H01L31/02245 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。

公开(公告)号：US20110146781A1

公开(公告)日：2011-06-23

申请号：US12822466

申请日：2010-06-24

申请人： Giovanna Laudisio ,  Kenneth Warren Hang ,  Richard John Sheffield Young

发明人： Giovanna Laudisio ,  Kenneth Warren Hang ,  Richard John Sheffield Young

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01B1/16 ,  C03C3/072 ,  C03C8/12 ,  C03C8/18 ,  H01L31/022425 ,  Y02E10/50

摘要： A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO2, 3.9 to 5.4 wt.-% of Al2O3, 2.8 to 3.8 wt.-% of TiO2 and 6.9 to 9.3 wt.-% of B2O3.

摘要翻译： 一种通过在前面的栅极电极图案中在硅晶片上施加和烧制金属浆料来形成硅晶片正面的栅极的方法，以形成种子栅极阴极，随后使硅晶片 LIP方法，其中所述金属糊包括有机载体和无机含量，所述无机物含量包含（a）90至98重量％的至少一种选自镍，铜和银的导电金属粉末和（b ）0.25至8重量％的至少一种玻璃料，其选自含有47.5至64.3重量％的PbO的玻璃料，23.8至32.2重量％的SiO 2，3.9至5.4重量％ 的Al 2 O 3，2.8〜3.8重量％的TiO 2和6.9〜9.3重量％的B 2 O 3。

公开(公告)号：US20090298283A1

公开(公告)日：2009-12-03

申请号：US12473586

申请日：2009-05-28

申请人： Hideki Akimoto ,  Takuya Konno ,  Giovanna Laudisio ,  Patricia J. Ollivier ,  Michael Rose ,  Jerome David Smith ,  Richard John Sheffield Young

发明人： Hideki Akimoto ,  Takuya Konno ,  Giovanna Laudisio ,  Patricia J. Ollivier ,  Michael Rose ,  Jerome David Smith ,  Richard John Sheffield Young

IPC分类号： H01L21/283 ,  H01B1/12 ,  H01L31/0224

CPC分类号： H01L31/0224 ,  C03C8/10 ,  C03C8/12 ,  C03C8/16 ,  C03C8/18 ,  H01B1/16 ,  H01B1/22 ,  H01L21/2225 ,  H01L21/283 ,  H01L31/022425 ,  H01L31/18 ,  H05K1/092 ,  Y02E10/50

摘要： Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

摘要翻译： 本发明的实施例涉及一种硅半导体器件和用于太阳能电池器件前侧的导电膏。

公开(公告)号：US20110146776A1

公开(公告)日：2011-06-23

申请号：US12641484

申请日：2009-12-18

申请人： Alan Frederick Carroll ,  Kenneth Warren Hang ,  Giovanna Laudisio ,  Brian J. Laughlin

发明人： Alan Frederick Carroll ,  Kenneth Warren Hang ,  Giovanna Laudisio ,  Brian J. Laughlin

IPC分类号： H01L29/43 ,  H01B1/22 ,  H01L21/283 ,  H01L31/0224

CPC分类号： C03C8/06 ,  C03C8/18 ,  H01B1/16 ,  H01B1/22 ,  H01L31/022425 ,  Y02E10/50

摘要： The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

摘要翻译： 本发明涉及可用于硅半导体器件和光伏电池的导电浆料中的玻璃组合物。

公开(公告)号：US20110139238A1

公开(公告)日：2011-06-16

申请号：US12963003

申请日：2010-12-08

申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： C03C8/02 ,  C03C8/12 ,  C03C8/16 ,  C03C8/18 ,  H01B1/22 ,  H01L31/02245 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/928

摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。

公开(公告)号：US20100294360A1

公开(公告)日：2010-11-25

申请号：US12783768

申请日：2010-05-20

申请人： David Kent Anderson ,  Russell David Anderson ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Shih-Ming Kao ,  Chun-Kwei Wu

发明人： David Kent Anderson ,  Russell David Anderson ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Shih-Ming Kao ,  Chun-Kwei Wu

IPC分类号： H01L31/0392 ,  H01L21/283 ,  H01L29/40

CPC分类号： H01B1/16 ,  H01B1/22 ,  H01L31/022425 ,  Y02E10/50

摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer in a grid pattern which comprises (i) thin parallel finger lines forming a bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines to form a top set of finger lines superimposing the bottom set of finger lines, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A以网格图案印刷在ARC层上，其包括（i）形成底部指纹线的薄的平行指线和（ii）与直线相交的母线的直角，（2 ）将包含0-3％（重量）玻璃料的无机物质的金属糊料B印刷并干燥在底部的一组指纹上，以形成叠加底部指状线组的顶部一组指纹线，以及（3） 烧制双面印刷的硅晶片，其中金属糊料B的无机含量比金属糊剂A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

公开(公告)号：US08999203B2

公开(公告)日：2015-04-07

申请号：US12952694

申请日：2010-11-23

申请人： Alistair Graeme Prince ,  Richard John Sheffield Young ,  Giovanna Laudisio ,  Gary Coultart ,  Kenneth Warren Hang ,  Ben Whittle

发明人： Alistair Graeme Prince ,  Richard John Sheffield Young ,  Giovanna Laudisio ,  Gary Coultart ,  Kenneth Warren Hang ,  Ben Whittle

IPC分类号： H01B1/02 ,  H01B1/12 ,  H01B1/22 ,  H01L31/0224

CPC分类号： H01B1/22 ,  H01L31/022425 ,  Y02E10/50

摘要： An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

摘要翻译： 一种包含微粒铝，有机载体和玻璃料的铝糊料，其选自（i）软化点温度在550-611℃范围内并含有11至33重量％SiO 2的无铅玻璃料， > 0〜7重量％的Al 2 O 3和2〜10重量％的B 2 O 3和（ii）软化点温度在571〜636℃范围内的含铅玻璃料，含有53〜57重量％ 的PbO，25〜29重量％的SiO 2，2〜6重量％的Al 2 O 3和6〜9重量％的B 2 O 3，可用于生产PERC硅太阳能电池的铝背电极。

公开(公告)号：US20110240124A1

公开(公告)日：2011-10-06

申请号：US12749790

申请日：2010-03-30

申请人： Giovanna Laudisio ,  Richard John Sheffield Young ,  Peter James Willmott ,  Kenneth Warren Hang

发明人： Giovanna Laudisio ,  Richard John Sheffield Young ,  Peter James Willmott ,  Kenneth Warren Hang

IPC分类号： H01L31/0224 ,  H01B1/02 ,  H01B1/22 ,  H01L21/283

CPC分类号： H01B1/22 ,  H01L31/022425 ,  Y02E10/50

摘要： Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper and nickel, (b) at least one lead-containing glass frit with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3 and (c) an organic vehicle.

摘要翻译： 金属浆料，其包含（a）至少一种选自银，铜和镍的导电金属粉末，（b）至少一种软化点温度在571至636℃范围内的含铅玻璃料 ，含有53〜57重量％的PbO，25〜29重量％的SiO 2，2〜6重量％的Al 2 O 3和6〜9重量％的B 2 O 3，（c）有机载体。

公开(公告)号：US08017428B2

公开(公告)日：2011-09-13

申请号：US12481672

申请日：2009-06-10

申请人： Giovanna Laudisio ,  Kurt Richard Mikeska ,  Alistair Graeme Prince ,  Richard John Sheffield Young

发明人： Giovanna Laudisio ,  Kurt Richard Mikeska ,  Alistair Graeme Prince ,  Richard John Sheffield Young

IPC分类号： H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/022425 ,  H01B1/22 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a silicon nitride antireflective coating on its front-side and being contaminated with silicon nitride on its back-side, and firing the aluminum paste after its application.

摘要翻译： 一种硅太阳能电池的制造方法，其特征在于，包括在设置有氮化硅抗反射涂层的硅晶片的背面上焙烧时能够形成氧化镁的氧化镁和/或镁化合物的铝浆的施加和烧制 在其前侧被氮化硅污染，并在其应用之后烧制铝浆。

公开(公告)号：US20100294359A1

公开(公告)日：2010-11-25

申请号：US12783761

申请日：2010-05-20

申请人： Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

发明人： Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

IPC分类号： H01L31/0392 ,  H01L21/283 ,  H01L29/40

CPC分类号： H01L31/022433 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  H01B1/16 ,  H01L31/022425 ,  Y02E10/50

摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属糊剂A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥包含含有0.2至3重量％玻璃的无机物质的金属浆料B 玻璃料覆盖在底部指状线组上，其中金属糊料B以网格图案打印，该网格图案包括（i）薄的平行指线，形成叠加了底部指状线组的顶部一组指纹线，以及（ii）与 指状物为直角，（3）烧制双面印刷的硅晶片，其中金属糊料B的无机物含量比金属膏A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。