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23 条记录 (耗时 0.023 秒)

    Methods of Lithographically Patterning a Substrate
    12.
    发明申请
    Methods of Lithographically Patterning a Substrate 有权

    公开(公告)号：US20130059255A1

    公开(公告)日：2013-03-07

    申请号：US13659790

    申请日：2012-10-24

    申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

    发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2022 ,  G03F7/203

    摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

    Methods for forming resist features and arrays of aligned, elongate resist features
    14.
    发明授权
    Methods for forming resist features and arrays of aligned, elongate resist features 有权
    用于形成抗蚀剂特征的方法和对准的细长抗蚀剂特征的阵列

    公开(公告)号：US09291907B2

    公开(公告)日：2016-03-22

    申请号：US13475574

    申请日：2012-05-18

    申请人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    发明人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    IPC分类号： H01L21/312 ,  G03F7/38 ,  G03F7/11 ,  G03F7/32

    CPC分类号： G03F7/38 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325

    摘要： Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.

    摘要翻译： 公开了形成抗蚀剂特征，抗蚀剂图案和对准的细长抗蚀剂特征的阵列的方法。 所述方法包括向抗蚀剂的至少下表面加入化合物，例如酸或碱，以改变暴露的，酸性的抗蚀剂区域和未曝光的碱性抗蚀剂区域中的至少一段的酸度。 酸度中的改变，例如增加或减少，使酸碱平衡发生变化，以促进或阻止该区段的发育。 可以使用这种“化学邻近校正”技术来增强暴露的酸性抗蚀剂区段的酸度，以增强未曝光的碱性抗蚀剂区段的碱性，或有效地将暴露的酸性抗蚀剂区段转化为未曝光的碱性抗蚀剂 段或反之亦然。 因此，可以避免不必要的换行符，行合并或未对齐。

    Methods of lithographically patterning a substrate
    16.
    发明授权
    Methods of lithographically patterning a substrate 有权
    平版印刷基板的方法

    公开(公告)号：US08859195B2

    公开(公告)日：2014-10-14

    申请号：US13659790

    申请日：2012-10-24

    申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

    发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

    IPC分类号： G03F7/22 ,  G03F7/20

    CPC分类号： G03F7/2022 ,  G03F7/203

    摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

    摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

    METHODS FOR FORMING RESIST FEATURES, PATTERNS IN A RESIST, AND ARRAYS OF ALIGNED, ELONGATE RESIST FEATURES
    18.
    发明申请
    METHODS FOR FORMING RESIST FEATURES, PATTERNS IN A RESIST, AND ARRAYS OF ALIGNED, ELONGATE RESIST FEATURES 有权
    形成抵抗特征的方法，电阻中的图案和对准的阵列，延长电阻特征

    公开(公告)号：US20130309605A1

    公开(公告)日：2013-11-21

    申请号：US13475574

    申请日：2012-05-18

    申请人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    发明人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/38 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325

    摘要： Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.

    摘要翻译： 公开了形成抗蚀剂特征，抗蚀剂图案和对准的细长抗蚀剂特征的阵列的方法。 所述方法包括向抗蚀剂的至少下表面加入化合物，例如酸或碱，以改变暴露的，酸性的抗蚀剂区域和未曝光的碱性抗蚀剂区域中的至少一段的酸度。 酸度中的改变，例如增加或减少，使酸碱平衡发生变化，以促进或阻止该区段的发育。 可以使用这种“化学邻近校正”技术来增强暴露的酸性抗蚀剂区段的酸度，以增强未曝光的碱性抗蚀剂区段的碱性，或有效地将暴露的酸性抗蚀剂区段转化为未曝光的碱性抗蚀剂 段或反之亦然。 因此，可以避免不必要的换行符，行合并或未对齐。

    Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
    19.
    发明授权
    Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same 有权
    形成图案化的富含硅的可显影抗反射材料的方法和包括其的半导体器件结构

    公开(公告)号：US08507191B2

    公开(公告)日：2013-08-13

    申请号：US12986806

    申请日：2011-01-07

    申请人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

    发明人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/24802

    摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

    摘要翻译： 形成图案化的富含硅的可显影抗反射材料的方法。 一种这样的方法包括形成富含硅的可显影抗反射组合物。 富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。 使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。 在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。 去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。 公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

    METHODS OF FORMING A PATTERNED, SILICON-ENRICHED DEVELOPABLE ANTIREFLECTIVE MATERIAL AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE SAME
    20.
    发明申请
    METHODS OF FORMING A PATTERNED, SILICON-ENRICHED DEVELOPABLE ANTIREFLECTIVE MATERIAL AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE SAME 有权
    形成图案的有机硅增强的可开发抗反射材料和包括其中的半导体器件结构的方法

    公开(公告)号：US20120177891A1

    公开(公告)日：2012-07-12

    申请号：US12986806

    申请日：2011-01-07

    申请人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

    发明人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

    IPC分类号： B32B3/10 ,  H01L21/306

    CPC分类号： H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/24802

    摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

    摘要翻译： 形成图案化的富含硅的可显影抗反射材料的方法。 一种这样的方法包括形成富含硅的可显影抗反射组合物。 富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。 使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。 在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。 去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。 公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。