Method and system for detecting particle contamination in an immersion lithography tool
    11.
    发明授权
    Method and system for detecting particle contamination in an immersion lithography tool 有权
    浸没式光刻工具中检测颗粒污染的方法和系统

    公开(公告)号:US08605250B2

    公开(公告)日:2013-12-10

    申请号:US12732751

    申请日:2010-03-26

    IPC分类号: G03B27/42

    摘要: In an immersion lithography tool, the status of the immersion hood surface may be estimated on the basis of an inline detection system that generates optical measurement data. For example, a digital imaging system may be implemented in order to obtain optical measurement data without requiring exposure of the interior of the lithography tool to ambient air. In other cases, other optical measurement techniques, such as FTIR and the like, may be applied.

    摘要翻译: 在浸没光刻工具中,可以基于产生光学测量数据的在线检测系统来估计浸没罩表面的状态。 例如,可以实现数字成像系统以获得光学测量数据,而不需要将光刻工具的内部暴露于环境空气。 在其他情况下,可以应用其它光学测量技术,例如FTIR等。

    Fluorine-passivated reticles for use in lithography and methods for fabricating the same
    13.
    发明授权
    Fluorine-passivated reticles for use in lithography and methods for fabricating the same 有权
    用于光刻的氟钝化掩模版及其制造方法

    公开(公告)号:US08338061B2

    公开(公告)日:2012-12-25

    申请号:US13158234

    申请日:2011-06-10

    IPC分类号: G03F1/00

    摘要: Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.

    摘要翻译: 提供用于光刻的氟钝化的掩模版以及制造和使用这种掩模版的方法。 根据一个实施例,一种用于执行光刻的方法包括在照明源和目标半导体晶片之间放置氟钝化的掩模版,并使电磁辐射从照明源通过氟钝化掩模版到达目标半导体晶片。 在另一个实施例中,氟钝化的掩模版包括衬底和覆盖衬底的图案化的氟钝化吸收材料层。 根据另一实施例,一种用于光刻中使用的掩模版的制造方法包括提供基板并形成覆盖在基板上的氟钝化的吸收材料层。

    FLUORINE-PASSIVATED RETICLES FOR USE IN LITHOGRAPHY AND METHODS FOR FABRICATING THE SAME
    14.
    发明申请
    FLUORINE-PASSIVATED RETICLES FOR USE IN LITHOGRAPHY AND METHODS FOR FABRICATING THE SAME 有权
    用于光刻的氟化物钝化剂及其制备方法

    公开(公告)号:US20110244377A1

    公开(公告)日:2011-10-06

    申请号:US13158234

    申请日:2011-06-10

    IPC分类号: G03F1/14

    摘要: Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.

    摘要翻译: 提供用于光刻的氟钝化的掩模版以及制造和使用这种掩模版的方法。 根据一个实施例,一种用于执行光刻的方法包括在照明源和目标半导体晶片之间放置氟钝化的掩模版,并使电磁辐射从照明源通过氟钝化掩模版到达目标半导体晶片。 在另一个实施例中,氟钝化的掩模版包括衬底和覆盖衬底的图案化的氟钝化吸收材料层。 根据另一实施例,一种用于光刻中使用的掩模版的制造方法包括提供基板并形成覆盖在基板上的氟钝化的吸收材料层。

    SELF-CORRECTING SUBSTRATE SUPPORT SYSTEM FOR FOCUS CONTROL IN EXPOSURE SYSTEMS
    17.
    发明申请
    SELF-CORRECTING SUBSTRATE SUPPORT SYSTEM FOR FOCUS CONTROL IN EXPOSURE SYSTEMS 审中-公开
    自动校正基板支持系统,用于接触系统中的聚焦控制

    公开(公告)号:US20100112468A1

    公开(公告)日:2010-05-06

    申请号:US12575003

    申请日:2009-10-07

    IPC分类号: G03F7/20 G03B27/58 G03B27/68

    CPC分类号: G03F7/707

    摘要: A substrate support system for process tools, such as lithography tools, comprises a configuration in which a local height level adjustment may be accomplished. Thus, upon detecting a non-allowable height level, the corresponding portion of the substrate support surface may be re-adjusted. Hence, the focus conditions of advanced exposure processes may be significantly enhanced, thereby providing superior process results and also increasing tool utilization.

    摘要翻译: 用于诸如光刻工具的处理工具的衬底支撑系统包括其中可以实现局部高度调节的构造。 因此,在检测到不允许的高度水平时,可以重新调整衬底支撑表面的对应部分。 因此,可以显着增强先进曝光工艺的重点条件,从而提供优异的工艺结果并提高工具利用率。