Switched electrical overstress protection

    公开(公告)号:US10608430B2

    公开(公告)日:2020-03-31

    申请号:US15272784

    申请日:2016-09-22

    Abstract: An apparatus includes a first terminal, a second terminal, and a conduction path circuit coupled between the first and second terminals. The conduction path circuit includes an input terminal to receive an enable signal which, when activated, allows the conduction path circuit to conduct electrical current between the first and second terminal. A control circuit coupled to the input terminal of the conduction path circuit is configured to selectively activate the enable signal.

    Integrated circuit device with overvoltage discharge protection

    公开(公告)号:US10147688B2

    公开(公告)日:2018-12-04

    申请号:US15053397

    申请日:2016-02-25

    Abstract: An integrated circuit device includes a package and at least two leads exposed external to the package to permit electrical connections to the package. A first die situated in the package has a first substrate and at least a first terminal electrically coupled to a first one of the leads. A second die situated in the package has a second substrate and at least a second terminal electrically coupled to a second one of the lead. An adhesive material holding the first and second die in place forms a voltage-triggered conduction path between the first and second die electrically that isolates the second die from the first die under a first condition and provides an ESD current path between the first one of the leads and the second one of the leads under a second condition.

    Electronic Device with Shared EOS Protection and Power Interruption Mitigation
    14.
    发明申请
    Electronic Device with Shared EOS Protection and Power Interruption Mitigation 有权
    具有共享EOS保护和电源中断缓解的电子设备

    公开(公告)号:US20160233670A1

    公开(公告)日:2016-08-11

    申请号:US14619626

    申请日:2015-02-11

    CPC classification number: H02H9/04

    Abstract: In an embodiment, an electronic device comprises a shared electrical over-stress (EOS) protection circuit. The shared EOS protection circuit may be coupled between a power input terminal and ground terminal to provide an EOS current path from the power input terminal to the ground terminal, and coupled between the output terminal and the ground terminal to provide an EOS current path from the output terminal to the ground terminal. The electronic device may also include a power interruption mitigation circuit to provide power to the electronic device during interruptions or fluctuations in external power.

    Abstract translation: 在一个实施例中,电子设备包括共享的电过压(EOS)保护电路。 共享的EOS保护电路可以耦合在电源输入端子和接地端子之间以提供从电力输入端子到接地端子的EOS电流路径,并且耦合在输出端子和接地端子之间以提供来自 输出端子接地端子。 电子设备还可以包括电源中断缓解电路,以在中断或外部电力的波动期间向电子设备提供电力。

    Output driver having reduced electromagnetic susceptibility and associated methods

    公开(公告)号:US10649481B2

    公开(公告)日:2020-05-12

    申请号:US16259087

    申请日:2019-01-28

    Abstract: An electronic circuit includes a driver circuit having an output terminal that can be coupled to a load to drive the load. A control circuit is coupled to the driver circuit for controlling the driver circuit. A transistor is coupled in series between the driver circuit and the output terminal. The transistor has a first terminal coupled to the driver circuit and a second terminal coupled to the output terminal. A biasing circuit is coupled to a gate terminal of the transistor and configured to provide a constant voltage to the gate terminal to bias the transistor to a conducting state to reduce the susceptibility of the electronic circuit to electromagnetic interference. The biasing circuit includes a voltage regulator, a Zener diode, and a capacitor. The Zener diode and capacitor are coupled to the gate terminal and a reference terminal.

    Output driver having reduced electromagnetic susceptibility and associated methods

    公开(公告)号:US10234887B2

    公开(公告)日:2019-03-19

    申请号:US15161529

    申请日:2016-05-23

    Abstract: An electronic circuit includes semiconductor substrate having a first doping type and a reference terminal coupled to the semiconductor substrate. A tub area having a second doping type is formed in the semiconductor substrate. A well area having the first doping type is formed within the tub area. A driver circuit comprising a transistor is formed within the well area and has an output terminal. A control circuit is coupled to the driver circuit for controlling the driver circuit. A second transistor is within the well area and coupled in series between the driver circuit and the output terminal, the second transistor having a first terminal coupled to the driver circuit and a second terminal coupled to the output terminal. A biasing circuit is coupled to a gate terminal of the second transistor and configured to bias the transistor to a conducting state.

    Electronic device with shared EOS protection and power interruption mitigation

    公开(公告)号:US09866014B2

    公开(公告)日:2018-01-09

    申请号:US14619626

    申请日:2015-02-11

    CPC classification number: H02H9/04

    Abstract: In an embodiment, an electronic device comprises a shared electrical over-stress (EOS) protection circuit. The shared EOS protection circuit may be coupled between a power input terminal and ground terminal to provide an EOS current path from the power input terminal to the ground terminal, and coupled between the output terminal and the ground terminal to provide an EOS current path from the output terminal to the ground terminal. The electronic device may also include a power interruption mitigation circuit to provide power to the electronic device during interruptions or fluctuations in external power.

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