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11.发明授权
公开(公告)号：US5262657A
公开(公告)日：1993-11-16
申请号：US825365
申请日：1992-01-24
CPC分类号： G02B6/4295 , H01L31/08
摘要： A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.
摘要翻译： 一种用于响应于激光脉冲产生射频能量脉冲的装置，其中GaAs的圆形晶片通过外延GaAs层金属化地与晶片方向结合的环形层，以及AlGaAs的外延层在其中一个的中心 激光将要被引导的环形外延层，在与AlGaAs外延层接触的金属化层中存在多个孔。 此外，AlGaAs外延层可以形成为与第一AlGaAs层相对，并且使光纤与其接触，使得可以在晶片的两侧引入激光。
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公开(公告)号：US5148251A
公开(公告)日：1992-09-15
申请号：US797592
申请日：1991-11-25
IPC分类号： H01L31/101 , H01L31/105 , H01L31/107 , H03K17/78
CPC分类号： H01L31/107 , H01L31/101 , H01L31/105 , H03K17/78
摘要： An optically activated avalanche GaAs switch having two opposing optical windows for receiving optical energy from an illumination source which may be, for example, a laser diode operating at a 1.06 micron wavelength. The switch is a semiconductor PIN structure including a substrate of intrinsic GaAs material within which is formed opposing highly doped deep recessed p+ and n+GaAs layers underlying a pair of ohmic contacts including outer annular layers of metallization which surround respective centrally located optical windows formed of AlGaAs. By illuminating the switch from opposite sides through the optical windows, electron-hole pairs are generated and a condition for an avalanche mode of operation is created in the center region of the device rendering it conductive.
摘要翻译： 一种光学活化的雪崩GaAs开关，具有两个相对的光学窗口，用于从照明源接收光能，所述照明源可以是例如以1.06微米波长工作的激光二极管。 该开关是包括本征GaAs材料的衬底的半导体PIN结构，其内部形成有相对于一对欧姆接触器下方的高掺杂深凹陷p +和n + GaAs层，其包括外部环形金属化层，该外部环形金属层环绕相应的位于中心的光学窗口， AlGaAs。 通过从相对侧通过光学窗口照明开关，产生电子 - 空穴对，并且在器件的中心区域中产生雪崩模式操作的条件使其导电。
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13.依法登记的发明
公开(公告)号：USH843H
公开(公告)日：1990-11-06
申请号：US374105
申请日：1989-05-26
CPC分类号： H03K17/78 , G02B6/4295 , H03K3/57
摘要： Utilizing sections of charged transmission line cables and optically-actied semiconductor switches, the direct generation of high power RF is demonstrated.
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14.发明授权
公开(公告)号：US5382788A
公开(公告)日：1995-01-17
申请号：US105314
申请日：1993-07-16
CPC分类号： H01L31/08
摘要： A monolithic photoconductive pulsar utilizing a radial transmission line structure to store energy and a unique optical pulse illumination means to trigger the radial transmission line to radiate extremely, high voltage gain, narrow bipolar pulses. By achieving a higher voltage gain, the bipolar RF pulses are desirable in that they substantially improve the efficiency and lifetime of the device over the prior art.
摘要翻译： 利用径向传输线结构存储能量的单片光导脉冲星和唯一的光脉冲照明装置来触发径向传输线以辐射极高的电压增益，窄的双极脉冲。 通过实现更高的电压增益，双极射频脉冲是期望的，因为它们相对于现有技术大大提高了器件的效率和寿命。
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15.发明授权
公开(公告)号：US5278854A
公开(公告)日：1994-01-11
申请号：US946720
申请日：1992-09-18
CPC分类号： H03F3/08
摘要： Bulk gallium arsenide having a high hold-off voltage is optically activated by a laser resulting in high power output. A high voltage input is applied to a semi-insulating gallium arsenide material. The gallium arsenide material is activated by laser light, thereby resulting in large current conduction. An external oscillating signal is superimposed on the high current resulting in a high power output.
摘要翻译： 具有高保持电压的大量砷化镓由激光器光学激活，导致高功率输出。 高电压输入施加到半绝缘砷化镓材料上。 砷化镓材料被激光激发，从而导致大的电流传导。 外部振荡信号叠加在高电流上，导致高功率输出。
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公开(公告)号：US5028971A
公开(公告)日：1991-07-02
申请号：US532786
申请日：1990-06-04
申请人： Anderson H. Kim , Maurice Weiner , Robert J. Youmans , Robert J. Zeto , Michelle A. Dornath-Mohr , Melvin J. Wade
发明人： Anderson H. Kim , Maurice Weiner , Robert J. Youmans , Robert J. Zeto , Michelle A. Dornath-Mohr , Melvin J. Wade
IPC分类号： H01L27/14 , H01L31/0224 , H01L31/09
CPC分类号： H01L31/09 , H01L27/14 , H01L31/0224
摘要： A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power supply and a laser that introduces laser light via fiber optic bundles to the substrate and parallel to the applied electric field.
摘要翻译： 具有低阈值能量，高电压能力和快速上升时间的光导开关，其包括主要由砷化镓组成的半导体衬底，掩模在相对侧的衬底上的图案电极，电源和通过光纤引入激光的激光器 捆绑到基板并平行于施加的电场。
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公开(公告)号：US4612455A
公开(公告)日：1986-09-16
申请号：US608840
申请日：1984-05-10
CPC分类号： H03K3/57
摘要： A pulse forming network with distributed inductance and capacitance is diosed for use in a magnetic modulator. The magnetic modulator has a magnetic core with a primary winding and a secondary winding around it. The pulse forming network includes an inner winding of flattened wire around the magnetic core and connected to one end of the secondary winding for receiving an induced voltage. The pulse forming network also includes a metal foil shield around the inner winding, so that the induced voltage may be stored capacitively between the inner winding and the shield. When the magnetic core saturates, the impedance of the secondary winding drops, so that the pulse forming network discharges through a load. The shape of the pulse through the load is determined by the inductance of the inner winding and the capacitance between the inner winding and the shield. The number of turns per unit length of the inner winding, the spacing between the inner winding and the shield, and the dielectric constant of an insulating layer of material between the inner winding and the shield may all be modified to obtain a pulse forming network forming a desired pulse shape.
摘要翻译： 公开了一种用于磁调制器的具有分布电感和电容的脉冲形成网络。 磁调制器具有带有初级绕组的磁芯和绕其的次级绕组。 脉冲形成网络包括围绕磁芯的扁平线的内部绕组，并且连接到次级绕组的一端以接收感应电压。 脉冲形成网络还包括围绕内部绕组的金属箔屏蔽，使得感应电压可以在内部绕组和屏蔽之间电容性地存储。 当磁芯饱和时，次级绕组的阻抗下降，使得脉冲形成网络通过负载放电。 通过负载的脉冲形状由内部绕组的电感和内部绕组与屏蔽之间的电容决定。 内部绕组的每单位长度的匝数，内部绕组和屏蔽之间的间隔以及内部绕组和屏蔽之间的材料绝缘层的介电常数都可以被修改以获得形成脉冲的网络形成 所需的脉冲形状。
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