公开(公告)号：US20240339287A1

公开(公告)日：2024-10-10

申请号：US18131271

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Nirbhav Singh Chopra ,  Peter F. Kurunczi ,  Anthony Renau ,  Joseph C. Olson ,  Frank Sinclair

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J37/12 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/2505

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

公开(公告)号：US20210166946A1

公开(公告)日：2021-06-03

申请号：US17093139

申请日：2020-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Anthony Renau ,  Joseph C. Olson ,  Peter F. Kurunczi

IPC: H01L21/265 ,  H01J37/20

Abstract: A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.