公开(公告)号：US09799492B2

公开(公告)日：2017-10-24

申请号：US15227298

申请日：2016-08-03

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Julian Blake

IPC: H01J37/32 ,  H01J37/317 ,  C23C14/22 ,  C23C14/56 ,  C23C16/44 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C14/22 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/3171 ,  H01J37/32477 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

公开(公告)号：US20140166894A1

公开(公告)日：2014-06-19

申请号：US14005187

申请日：2012-03-14

Applicant: Takahisa Kato ,  Yutaka Setomoto

Inventor： Takahisa Kato ,  Yutaka Setomoto

IPC: G21K1/087

CPC classification number: G21K1/087 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/1205 ,  H01J2237/1207 ,  H01J2237/31774

Abstract: An electrostatic charged particle beam lens includes an electrode including a flat plate having a first surface having a normal line extending in a direction of an optical axis and a second surface opposite to the first surface, the electrode having a through-hole extending from the first surface to the second surface. A circularity in a first region that is on the first surface side and a circularity in a second region that is on the second surface side are each better than a circularity in a third region that is a region in the electrode disposed between the first surface and the second surface.

Abstract translation: 静电带电粒子束透镜包括：电极，其包括平板，该平板具有沿光轴方向延伸的法线的第一表面和与该第一表面相对的第二表面，该电极具有从第一表面延伸的通孔 表面到第二表面。 位于第一表面侧的第一区域中的圆形度和位于第二表面侧的第二区域中的圆形度在第三区域中优于圆形度，第三区域是设置在第一表面和第二表面之间的电极中的区域 第二个表面。

公开(公告)号：US4985634A

公开(公告)日：1991-01-15

申请号：US226275

申请日：1988-07-29

Applicant: Gerhard Stengl ,  Hilton F. Glavish

Inventor： Gerhard Stengl ,  Hilton F. Glavish

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/04928 ,  H01J2237/1207 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

Abstract translation: 描述了用于投影离子束光刻的装置和方法，其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真，大场，缩小图像。 所示的列包括加速的Einzel透镜，随后是间隙透镜，具有许多合作特征。 通过协调选择光学柱的参数，同时最小化透镜失真和色彩模糊。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量，并且提供了将新场与现有图案相匹配的装置，即使后者具有 被处理扭曲了。 计量系统使仪器方便校准和调整。

公开(公告)号：US11705252B2

公开(公告)日：2023-07-18

申请号：US17403849

申请日：2021-08-16

Applicant: ASML Netherlands B.V.

Inventor： Alexander Hendrik Vincent Van Veen ,  Willem Henk Urbanus ,  Marco Jan-Jaco Wieland

IPC: H01J37/30 ,  G21K5/04 ,  G21K1/02 ,  H01J37/317 ,  H01J37/16 ,  H01J37/12

CPC classification number: G21K5/04 ,  G21K1/02 ,  H01J37/12 ,  H01J37/16 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/024 ,  H01J2237/0213 ,  H01J2237/0216 ,  H01J2237/0262 ,  H01J2237/032 ,  H01J2237/1207 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/30472

Abstract: The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.

公开(公告)号：US09437397B2

公开(公告)日：2016-09-06

申请号：US13928815

申请日：2013-06-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Julian Blake

IPC: H01J37/317 ,  C23C14/22 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C14/22 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/3171 ,  H01J37/32477 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

Abstract translation: 公开了具有纹理硅衬垫的衬底处理系统，例如离子注入系统，沉积系统和蚀刻系统。 使用化学处理来形成硅衬里，该化学处理产生小的特征，称为微锥体，其高度可以小于20微米。 尽管这些微锥体比石墨衬垫中通常发现的纹理特征小得多，但纹理硅能够保持沉积的涂层并且抗剥落。 还公开了对这些基板处理系统进行预防性维护的方法。

公开(公告)号：US20140151570A1

公开(公告)日：2014-06-05

申请号：US14004845

申请日：2012-03-14

Applicant: Takahisa Kato ,  Yutaka Setomoto

Inventor： Takahisa Kato ,  Yutaka Setomoto

IPC: H01J37/12

CPC classification number: H01J37/12 ,  H01J2237/04924 ,  H01J2237/1205 ,  H01J2237/1207 ,  H01J2237/31774

Abstract: An electrostatic charged particle beam lens includes an electrode including a flat plate having a first surface having a normal line extending in a direction of an optical axis and a second surface opposite to the first surface, the electrode having a through-hole extending from the first surface to the second surface. When an opening cross section is defined as a cross section of the through-hole taken along a plane perpendicular to the normal line and a representative diameter is defined as a diameter of a circle obtained by performing regression analysis of the opening cross section, a representative diameter of the opening cross section in a first region that is on the first surface side and a representative diameter of the opening cross section in a second region that is on the second surface side are smaller than a representative diameter of the opening cross section in a third region that is a region in the electrode disposed between the first surface and the second surface.

Abstract translation: 静电带电粒子束透镜包括：电极，其包括平板，该平板具有沿光轴方向延伸的法线的第一表面和与该第一表面相对的第二表面，该电极具有从第一表面延伸的通孔 表面到第二表面。 当开口横截面被定义为沿着垂直于法线的平面截取的通孔的横截面，并且代表性直径被定义为通过对开口横截面进行回归分析而获得的圆的直径时，代表 在第一表面侧的第一区域中的开口横截面的直径和位于第二表面侧的第二区域中的开口横截面的代表性直径小于开口横截面的代表性直径 第三区域，其是设置在第一表面和第二表面之间的电极中的区域。

公开(公告)号：US07919749B2

公开(公告)日：2011-04-05

申请号：US12234453

申请日：2008-09-19

Applicant: Fang Zhou ,  Juergen Frosien ,  Pavel Adamec

Inventor： Fang Zhou ,  Juergen Frosien ,  Pavel Adamec

IPC: H01J37/244

CPC classification number: H01J37/05 ,  H01J37/073 ,  H01J37/153 ,  H01J2237/057 ,  H01J2237/06341 ,  H01J2237/1207 ,  H01J2237/1534 ,  H01J2237/28

Abstract: An electron beam apparatus and a method for providing an energy-filtered primary electron beam are described. Therein, a primary electron beam having an asymmetric first energy distribution is generated by means of an electron source. The primary electron beam is high-pass energy filtered using a retarding lens.

Abstract translation: 描述了一种用于提供能量过滤的一次电子束的电子束装置和方法。 其中，通过电子源产生具有不对称的第一能量分布的一次电子束。 一次电子束是使用延迟透镜进行高通能量滤波。

公开(公告)号：US20240339287A1

公开(公告)日：2024-10-10

申请号：US18131271

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Nirbhav Singh Chopra ,  Peter F. Kurunczi ,  Anthony Renau ,  Joseph C. Olson ,  Frank Sinclair

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J37/12 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/2505

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

公开(公告)号：US20240006146A1

公开(公告)日：2024-01-04

申请号：US18267837

申请日：2021-12-24

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： Jeroen Anton VAN KAN

IPC: H01J37/12 ,  H01J37/08 ,  H01J37/26

CPC classification number: H01J37/12 ,  H01J37/08 ,  H01J2237/0264 ,  H01J2237/082 ,  H01J2237/1207 ,  H01J37/26

Abstract: An ion microscope, a method of constructing an ion microscope, and a method of aligning an ion beam in an ion microscope. The microscope comprises a nano-aperture ion source; and a focusing system; wherein the focusing system is configured for selectively coaxially focusing an ion beam generated from an electron beam ionizing an ionizing gas in the nano-aperture ion source and the electron beam.

公开(公告)号：US20230386696A1

公开(公告)日：2023-11-30

申请号：US18326935

申请日：2023-05-31

Applicant: ASML Netherlands B.V.

Inventor： Alexander Hendrik Vincent VAN VEEN ,  Willem Henk URBANUS ,  Marco Jan-Jaco WIELAND

IPC: G21K5/04 ,  H01J37/30 ,  G21K1/02 ,  H01J37/317 ,  H01J37/16 ,  H01J37/12

CPC classification number: G21K5/04 ,  H01J37/3007 ,  G21K1/02 ,  H01J37/3177 ,  H01J37/16 ,  H01J37/12 ,  H01J2237/0216 ,  H01J2237/0262 ,  H01J2237/1215 ,  H01J2237/002 ,  H01J2237/032 ,  H01J2237/30472 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/0213 ,  H01J2237/1207 ,  H01J2237/024

Abstract: The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.