公开(公告)号：US20210283650A1

公开(公告)日：2021-09-16

申请号：US17335829

申请日：2021-06-01

申请人： Applied Materials, Inc.

发明人： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC分类号： B05D3/04 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

摘要： Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US11033930B2

公开(公告)日：2021-06-15

申请号：US16242184

申请日：2019-01-08

申请人： Applied Materials, Inc.

发明人： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC分类号： B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  B05D1/18

摘要： Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US10964527B2

公开(公告)日：2021-03-30

申请号：US16401883

申请日：2019-05-02

申请人： Applied Materials, Inc.

发明人： Jong Mun Kim ,  Biao Liu ,  Cheng Pan ,  Erica Chen ,  Chentsau Ying ,  Srinivas Nemani ,  Ellie Yieh

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/311

摘要： Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20180366317A1

公开(公告)日：2018-12-20

申请号：US16008495

申请日：2018-06-14

申请人： Applied Materials, Inc.

发明人： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC分类号： H01L21/027 ,  H01L21/02 ,  H01L21/67

摘要： Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.