公开(公告)号：US20220359532A1

公开(公告)日：2022-11-10

申请号：US17308577

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H01L27/108 ,  C23C16/42 ,  C23C16/455

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US20240074162A1

公开(公告)日：2024-02-29

申请号：US17898796

申请日：2022-08-30

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar

IPC: H01L27/108 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/10891 ,  H01L21/28568 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53266

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal nitride layer comprising lanthanum nitride (LaN) and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal nitride layer.

公开(公告)号：US20240060175A1

公开(公告)日：2024-02-22

申请号：US17891753

申请日：2022-08-19

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Yong Yang ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Kunal Bhatnagar ,  Mohith Verghese

IPC: C23C16/06 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/06 ,  H01L21/28556 ,  C23C16/45553

Abstract: Embodiments of the disclosure provide conformally deposited molybdenum films having reduced resistivity and methods of forming the same. The methods include forming a nucleation layer directly on a dielectric layer on a substrate surface by exposing the substrate surface to a molybdenum-containing precursor and a nucleation reactant, and conformally depositing a molybdenum film on the nucleation layer. Another aspect of the disclosure pertains to a method that is part of a gap fill process, comprising forming a nucleation layer directly on a dielectric region within one or more high aspect ratio gap features, including vertical gap features and/or horizontal gap features, and conformally depositing a molybdenum film on the nucleation layer to fill the feature.

公开(公告)号：US20240035149A1

公开(公告)日：2024-02-01

申请号：US17877310

申请日：2022-07-29

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/56 ,  H01L27/108

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/56 ,  H01L27/10847

Abstract: Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells.