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    METHODS OF FORMING ELECTRONIC DEVICES HAVING A STRAINED TRANSISTOR CHANNEL
    2.
    发明申请
    METHODS OF FORMING ELECTRONIC DEVICES HAVING A STRAINED TRANSISTOR CHANNEL 有权

    公开(公告)号：US20250048683A1

    公开(公告)日：2025-02-06

    申请号：US18788544

    申请日：2024-07-30

    Applicant: Applied Materials, Inc.

    Inventor： Srinivas Gandikota ,  Yogesh Sharma ,  Tuerxun Ailihumaer ,  Yixiong Yang

    IPC: H01L29/10 ,  H01L29/66

    Abstract: Embodiments of the disclosure provide methods of manufacturing electronic devices that meet compressive stress requirements for PMOS transistors and tensile stress requirements for NMOS transistors. Each P-metal stack and P-metal stack: is formed on a top surface of a channel located between a source and a drain on a semiconductor substrate, and comprises nanosheet channel layers and trenches between each nanosheet channel layer, and has at least one side defining a gate trench. Some embodiments include forming a work function layer in the channel and inducing a work function layer strain in the channel. Some embodiments include forming a gate metal fill layer on each of the P-metal stack and the N-metal stack and inducing a gate metal fill layer strain in the channel. The gate metal fill layer covers the at least one side of each of the P-metal stack and the N-metal stack and fills the gate trench.

    CONFORMAL MOLYBDENUM DEPOSITION
    7.
    发明公开
    CONFORMAL MOLYBDENUM DEPOSITION 审中-公开

    公开(公告)号：US20240060175A1

    公开(公告)日：2024-02-22

    申请号：US17891753

    申请日：2022-08-19

    Applicant: Applied Materials, Inc.

    Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Yong Yang ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Kunal Bhatnagar ,  Mohith Verghese

    IPC: C23C16/06 ,  H01L21/285 ,  C23C16/455

    CPC classification number: C23C16/06 ,  H01L21/28556 ,  C23C16/45553

    Abstract: Embodiments of the disclosure provide conformally deposited molybdenum films having reduced resistivity and methods of forming the same. The methods include forming a nucleation layer directly on a dielectric layer on a substrate surface by exposing the substrate surface to a molybdenum-containing precursor and a nucleation reactant, and conformally depositing a molybdenum film on the nucleation layer. Another aspect of the disclosure pertains to a method that is part of a gap fill process, comprising forming a nucleation layer directly on a dielectric region within one or more high aspect ratio gap features, including vertical gap features and/or horizontal gap features, and conformally depositing a molybdenum film on the nucleation layer to fill the feature.

    CONFORMAL MOLYBDENUM DEPOSITION
    8.
    发明公开
    CONFORMAL MOLYBDENUM DEPOSITION 审中-公开

    公开(公告)号：US20240026529A1

    公开(公告)日：2024-01-25

    申请号：US18222589

    申请日：2023-07-17

    Applicant: Applied Materials, Inc.

    Inventor： Srinivas Gandikota ,  Tuerxun Ailihumaer ,  Yixiong Yang ,  Seshadri Ganguli ,  Yogesh Sharma

    IPC: C23C16/08 ,  C23C16/02 ,  C23C16/04

    CPC classification number: C23C16/08 ,  C23C16/0272 ,  C23C16/045

    Abstract: Embodiments of the disclosure provide conformally deposited molybdenum films having reduced resistivity and methods of forming the same. The methods include converting an amorphous silicon layer to a metal layer by thermally soaking the amorphous silicon layer comprising silicon atoms in the presence of a metal compound selected from the group consisting of a molybdenum compound and a tungsten compound until at least a portion of the silicon atoms in the amorphous silicon layer are replaced by metal atoms selected from the group consisting of molybdenum atoms and tungsten atoms. The methods include conformally depositing a molybdenum film on the metal layer.

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