公开(公告)号：US09711366B2

公开(公告)日：2017-07-18

申请号：US14989077

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3065 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

公开(公告)号：US20170040175A1

公开(公告)日：2017-02-09

申请号：US15131256

申请日：2016-04-18

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: H01L21/3065 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Abstract translation: 本技术的实施例可以包括蚀刻衬底的方法。 该方法可以包括在等离子体区域中击打等离子体放电。 该方法还可以包括将含氟前体流入等离子体区域以形成等离子体流出物。 等离子体流出物可能流入混合区域。 该方法可以进一步包括将含氢和氧的化合物引入混合区域，而不首先使含氢氧化合物进入等离子体区域。 此外，该方法可以包括使含氢和氧的化合物与混合区域中的等离子体流出物反应以形成反应产物。 反应产物可以流过分隔件中的多个开口到基底处理区域。 该方法还可以包括在衬底处理区域中用反应产物蚀刻衬底。

公开(公告)号：US20150129545A1

公开(公告)日：2015-05-14

申请号：US14512973

申请日：2014-10-13

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: C23F1/12 ,  H01J37/32 ,  C23F1/02

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。 在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。

公开(公告)号：US10424463B2

公开(公告)日：2019-09-24

申请号：US15131256

申请日：2016-04-18

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

公开(公告)号：US20200234971A1

公开(公告)日：2020-07-23

申请号：US16840944

申请日：2020-04-06

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Lin Xu ,  Anchuan Wang

IPC: H01L21/311

Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material and a second layer of an oxygen-containing material. The methods may also include removing the oxygen-containing material.

公开(公告)号：US10468267B2

公开(公告)日：2019-11-05

申请号：US15792376

申请日：2017-10-24

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Lin Xu ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/00 ,  H01L21/67

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

公开(公告)号：US10424464B2

公开(公告)日：2019-09-24

申请号：US15581611

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

公开(公告)号：US20190267248A1

公开(公告)日：2019-08-29

申请号：US16288311

申请日：2019-02-28

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Lin Xu ,  Anchuan Wang

IPC: H01L21/311

Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material, a second layer of an oxygen-containing material, and a third layer of a carbon-containing or nitrogen-containing material. The second layer of the spacer may be disposed between the first layer and third layer of the spacer. The methods may also include removing the oxygen-containing material.

公开(公告)号：US10186428B2

公开(公告)日：2019-01-22

申请号：US15707638

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang

IPC: H01L21/3213 ,  B08B7/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.

公开(公告)号：US20170229287A1

公开(公告)日：2017-08-10

申请号：US15581611

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/311

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.