公开(公告)号：US20180350619A1

公开(公告)日：2018-12-06

申请号：US15792376

申请日：2017-10-24

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Lin Xu ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/311 ,  H01L21/67

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

公开(公告)号：US20180350617A1

公开(公告)日：2018-12-06

申请号：US15609483

申请日：2017-05-31

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Lin Xu ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/311

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

公开(公告)号：US09768034B1

公开(公告)日：2017-09-19

申请号：US15349530

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  B08B7/00

CPC classification number: H01L21/32136 ,  B08B7/00 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.

公开(公告)号：US20160118268A1

公开(公告)日：2016-04-28

申请号：US14989077

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3213

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

公开(公告)号：US09299582B2

公开(公告)日：2016-03-29

申请号：US14512973

申请日：2014-10-13

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。 在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。

公开(公告)号：US11335565B2

公开(公告)日：2022-05-17

申请号：US16840944

申请日：2020-04-06

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Lin Xu ,  Anchuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material and a second layer of an oxygen-containing material. The methods may also include removing the oxygen-containing material.

公开(公告)号：US09287134B2

公开(公告)日：2016-03-15

申请号：US14157724

申请日：2014-01-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Xikun Wang ,  Lin Xu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/0337

Abstract: Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于氧化硅，氮化硅和/或其它电介质来选择性地蚀刻氧化钛的方法。 所述方法包括使用由含氟前体和/或含氯前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钛反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钛，同时非常缓慢地除去其它暴露的材料。 在远程等离子体蚀刻之前执行方向溅射预处理，并且能够提高选择性以及方向选择性。 在一些实施方案中，钛氧化物蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

公开(公告)号：US20150129546A1

公开(公告)日：2015-05-14

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: C23F1/12 ,  C23F1/02

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

公开(公告)号：US10204795B2

公开(公告)日：2019-02-12

申请号：US15096428

申请日：2016-04-12

Applicant: Applied Materials, Inc.

Inventor： Jiayin Huang ,  Lin Xu ,  Zhijun Chen ,  Anchuan Wang

IPC: H01L21/00 ,  C23C16/00 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67

Abstract: A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.

公开(公告)号：US20180138055A1

公开(公告)日：2018-05-17

申请号：US15707638

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L21/3065 ,  H01J37/32 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01L21/32136 ,  B08B7/00 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.