公开(公告)号：US5281831A

公开(公告)日：1994-01-25

申请号：US784706

申请日：1991-10-30

申请人： Tsutomu Uemoto ,  Atsushi Kamata ,  Hidetoshi Fujimoto ,  Hiroshi Mitsuhashi

发明人： Tsutomu Uemoto ,  Atsushi Kamata ,  Hidetoshi Fujimoto ,  Hiroshi Mitsuhashi

IPC分类号： H01S5/30 ,  H01L29/167 ,  H01L29/227 ,  H01S3/19

CPC分类号： H01S5/305 ,  H01S5/3036

摘要： AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

摘要翻译： 将AlN以分子状态添加到光学半导体器件的SiC发光层，并且在所述发光层中彼此接近的晶格点之间形成AlN的缔合。 所述缔合在电子负性程度上与所述SiC大不相同，使得所述缔合捕获所述发光层中的载体并形成激子。

公开(公告)号：US20050120076A1

公开(公告)日：2005-06-02

申请号：US10504188

申请日：2003-02-18

申请人： Atsushi Kamata ,  Shintaro Sakubai

发明人： Atsushi Kamata ,  Shintaro Sakubai

IPC分类号： G06F13/00 ,  G06F15/00 ,  G06F17/30 ,  G06Q10/00 ,  G06Q30/06 ,  G06Q50/00 ,  G06F15/16 ,  G06F3/00 ,  G06F9/00 ,  G06F17/00

CPC分类号： G06F17/30917 ,  G06F17/30014 ,  G06F17/30241 ,  G06F17/30882

摘要： A server for distributing information provided by an information provider as an information element group consisting of one or more information elements connected, to a user terminal. The server includes means for creating a hierarchical structure between the information elements via an image, means for receiving an access to an image related to the first information element, means for searching a second information element constituting a hierarchical structure with the first information element via the image, and means for arranging the second information element on the image and distributing it to the user terminal.

摘要翻译： 一种用于将由信息提供者提供的信息作为由连接的一个或多个信息元素组成的信息元素组分发给用户终端的服务器。 服务器包括用于通过图像在信息元素之间创建层次结构的装置，用于接收对与第一信息元素相关的图像的访问的装置，用于通过第一信息元素搜索构成分层结构的第二信息元素的装置 图像和用于将第二信息元素布置在图像上并将其分发给用户终端的装置。

公开(公告)号：US5741902A

公开(公告)日：1998-04-21

申请号：US464341

申请日：1995-06-05

申请人： Shigeto Negi ,  Motosuke Yamanaka ,  Kanemasa Katsu ,  Isao Sugiyama ,  Yuuki Komatu ,  Atsushi Kamata ,  Akihiko Tsuruoka ,  Yoshimasa Machida

发明人： Shigeto Negi ,  Motosuke Yamanaka ,  Kanemasa Katsu ,  Isao Sugiyama ,  Yuuki Komatu ,  Atsushi Kamata ,  Akihiko Tsuruoka ,  Yoshimasa Machida

IPC分类号： A61K31/545 ,  A61K31/546 ,  A61P31/04 ,  C07D20060101 ,  C07D501/00 ,  C07D501/04 ,  C07D501/06 ,  C07D501/18 ,  C07D501/26 ,  C07D501/28 ,  C07D501/34 ,  C07D501/36 ,  C07D501/40

CPC分类号： C07D501/00

摘要： A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl, fluorine-substituted lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms, or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.4 denotes a carboxyl or protected carboxyl group; or a pharmaceutically acceptable salt thereof; and a process for the preparation thereof; as well as an antibacterial composition containing the above cephem compound.

公开(公告)号：US5563265A

公开(公告)日：1996-10-08

申请号：US393074

申请日：1995-02-23

申请人： Shigeto Negi ,  Motosuke Yamanaka ,  Kanemasa Katsu ,  Isao Sugiyama ,  Yuuki Komatu ,  Atsushi Kamata ,  Akihiko Tsuruoka ,  Yoshimasa Machida

发明人： Shigeto Negi ,  Motosuke Yamanaka ,  Kanemasa Katsu ,  Isao Sugiyama ,  Yuuki Komatu ,  Atsushi Kamata ,  Akihiko Tsuruoka ,  Yoshimasa Machida

IPC分类号： A61K31/545 ,  A61K31/546 ,  A61P31/04 ,  C07D20060101 ,  C07D501/00 ,  C07D501/04 ,  C07D501/06 ,  C07D501/18 ,  C07D501/26 ,  C07D501/28 ,  C07D501/34 ,  C07D501/36 ,  C07D501/60

CPC分类号： C07D501/00

摘要： A 7-acyl-3-substituted carbamoyloxy cephem compound represented by the following formula (1): ##STR1## wherein A means a --CH.dbd. or --N.dbd. group; R.sup.1 denotes a hydroxyl, lower alkoxyl, fluorine-substituted lower alkoxyl or protected hydroxyl group; R.sup.2 and R.sup.3 are the same or different and individually represent a lower alkyl, hydroxyl-substituted lower alkyl, a carbamoyl-substituted lower alkyl group or cyano-substituted lower alkyl group, R.sup.2 is a hydrogen atom and R.sup.3 is a lower alkoxyl or alkyl group optionally substituted by one or more halogen atoms, or the group ##STR2## means a 4-6 membered heterocyclic group, which contains one nitrogen atom, or a morpholino group, said heterocyclic group or morpholino group being optionally substituted by one or more lower alkyl, hydroxyl and/or hydroxyl-substituted lower alkyl groups; and R.sup.4 denotes a carboxyl or protected carboxyl group; or a pharmaceutically acceptable salt thereof; and a process for the preparation thereof; as well as an antibacterial composition containing the above cephem compound.

摘要翻译： 由下式（1）表示的7-酰基-3-取代氨基甲酰氧基头孢烯化合物：其中A表示-CH =或-N =基团; R1表示羟基，低级烷氧基，氟取代的低级烷氧基或被保护的羟基; R2和R3相同或不同，分别表示低级烷基，羟基取代的低级烷基，氨基甲酰取代的低级烷基或氰基取代的低级烷基，R2是氢原子，R3是低级烷氧基或烷基 任选地被一个或多个卤素原子取代，或者“IMAGE”是指含有一个氮原子或吗啉基的4-6元杂环基，所述杂环基或吗啉基任选被一个或多个低级烷基 ，羟基和/或羟基取代的低级烷基; R4表示羧基或被保护的羧基; 或其药学上可接受的盐; 及其制备方法; 以及含有上述头孢烯化合物的抗菌组合物。

公开(公告)号：US5324963A

公开(公告)日：1994-06-28

申请号：US30870

申请日：1993-03-12

申请人： Atsushi Kamata

发明人： Atsushi Kamata

IPC分类号： H01L27/12 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01L29/161 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/28

摘要： A light-emitting diode has a GaAs substrate, and two ZnSe layers formed on the substrate and having a pn junction. An AuZn electrode is formed on the upper one of the ZnSe layers with a (ZnSe).sub.x (GaAs).sub.(1-x) ohmic contact layer interposed therebetween. The coefficient x of the composition formula is substantially continuously varied from 1.0 to 0 from the ZnSe layer side. An AuGe electrode is formed on the lower surface of the GaAs substrate. The (ZnSe).sub.x (GaAs).sub.(1-x) layer reduces the resistance between the ZnSe layer and AuZn electrode, and also prevents Ga atoms from diffusing into the ZnSe layer.

摘要翻译： 发光二极管具有GaAs衬底，并且在衬底上形成具有pn结的两个ZnSe层。 AuZn电极形成在ZnSe层的上部，其间插入有（ZnSe）x（GaAs）（1-x）欧姆接触层。 组成式的系数x从ZnSe层侧基本上连续地从1.0变化到0。 在GaAs衬底的下表面上形成AuGe电极。 （ZnSe）x（GaAs）（1-x）层降低了ZnSe层和AuZn电极之间的电阻，并且还防止Ga原子扩散到ZnSe层中。

公开(公告)号：US5150191A

公开(公告)日：1992-09-22

申请号：US616563

申请日：1990-11-21

申请人： Nawoto Motegi ,  Tsutomu Uemoto ,  Atsushi Kamata ,  Hiroshi Mitsuhashi

发明人： Nawoto Motegi ,  Tsutomu Uemoto ,  Atsushi Kamata ,  Hiroshi Mitsuhashi

IPC分类号： H01L21/365 ,  H01L29/227 ,  H01L31/0296 ,  H01L33/00 ,  H01L33/28

CPC分类号： H01L33/285 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02477 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/227 ,  H01L31/02963 ,  H01L33/0083 ,  H01L33/0087

摘要： An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.

摘要翻译： 光学半导体器件设置有p型ZnSe半导体层。 将Si，Cl和O原子作为掺杂剂添加到ZnSe半导体层。 形成Si，Cl和O原子的结合以在半导体层中限定浅受主电平。 每个关联包括一个Si原子，一个Cl原子和一个O原子，通过该原子，Se的晶格点在半导体层中彼此相邻的那些晶格点之间位移。

公开(公告)号：US4868615A

公开(公告)日：1989-09-19

申请号：US97166

申请日：1987-09-16

申请人： Atsushi Kamata

发明人： Atsushi Kamata

IPC分类号： H01L21/365 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/28 ,  H01L21/02395 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0008 ,  H01L33/0029 ,  H01L33/0087 ,  H01L33/285

摘要： A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnS.sub.x Se.sub.1-x crystal layer (0.ltoreq.x.ltoreq.1) formed on the substrate and containing a Group VII element as a donor impurity, and a p type ZnS.sub.y Se.sub.1-y crystal layer (0.ltoreq.y.ltoreq.1) formed on the n type crystal layer and containing a Group I element as an acceptor impurity, where a pn junction is formed between the n type crystal layer and the p type crystal layer.

摘要翻译： 公开了一种半导体发光器件，其包括化合物半导体衬底，在衬底上形成并含有作为施主杂质的第VII族元素的n型ZnS x Se 1-x晶体层（0≤x≤1） 形成在n型晶体层上并含有作为受主杂质的第I族元素的ZnSySe1-y型ZnSySe1-y晶体层（0