公开(公告)号：US20190144999A1

公开(公告)日：2019-05-16

申请号：US16092577

申请日：2017-04-10

Applicant: BASF SE

Inventor： Carolin LIMBURG ,  Daniel LOEFFLER ,  Hagen WILMER ,  Marc WALTER ,  Matthias REINERS

IPC: C23C16/455 ,  H01L21/285 ,  C07F15/06 ,  C07F15/04

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a σ-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.

公开(公告)号：US20240166977A1

公开(公告)日：2024-05-23

申请号：US18548582

申请日：2022-02-24

Applicant: BASF SE

Inventor： Verena STREMPEL ,  Marta REINOSO GARCIA ,  Daniel LOEFFLER ,  Carsten SUELING

IPC: C11D17/00 ,  C11D3/12 ,  C11D3/16 ,  C11D3/33

CPC classification number: C11D17/0039 ,  C11D3/1206 ,  C11D3/168 ,  C11D3/33 ,  C11D17/0091 ,  C11D2111/14

Abstract: Process for making a particulate coated chelating agent (A) wherein said process comprises the following steps:



(a) Providing a granule or powder containing an alkali metal salt of methyl glycine diacetic acid (MGDA) or glutamic acid diacetic acid (GLDA), preferably with a moisture content in the range of from 1 to 15% by weight,
(b) treating said salt with a metal alkoxide or metal halide or metal amide or alkyl metal compound or with an alkoxide, amide, halide or alkyl compound of silicon,
(c) treating the material obtained in step (b) with moisture or
(c*) with ozone,
(d) optionally, repeating the sequence of steps (b) and (c) once to 25 times.

公开(公告)号：US20220324885A1

公开(公告)日：2022-10-13

申请号：US17626836

申请日：2020-07-03

Applicant: BASF SE

Inventor： Szilard CSIHONY ,  Jean-Pierre Berkan LINDNER ,  Daniel LOEFFLER ,  Yeni BURK ,  Ingolf HENNIG ,  Lucas Benjamin HENDERSON ,  Birgit GERKE ,  Rui DE OLIVEIRA ,  Volodymyr BOYKO ,  Frank PIRRUNG

IPC: C07F7/04 ,  C08G61/10 ,  C08K3/36 ,  H05K1/03

Abstract: A composition comprising a monomer of the general formula (M1) wherein M is a metal or semimetal of main group 3 or 4 of the periodic table; XM1, XM2 are each O; RM1, RM2 are the same or different and are each an —CRaRb—Ar—O—Rc; Ar is a C6 to C30 carbocyclic ring system; Ra, Rb are the same or different and are each H or C1 to C6 alkyl; Rc is C1-C22-alkyl, benzyl or phenyl; q according to the valency and charge of M is 0 or 1; XM3, XM4 are the same or different and are each O, C6 to C10 aryl, or —CH2—; RM3, RM4 are the same or different and are each RM1, H, C1-C22 alkyl, or a polymer selected from a polyalkylene, a polysiloxane, or a polyether.

公开(公告)号：US20210395513A1

公开(公告)日：2021-12-23

申请号：US17281230

申请日：2019-09-26

Applicant: BASF SE

Inventor： Jean-Pierre Berkan LINDNER ,  Szilard CSIHONY ,  Daniel LOEFFLER ,  Yeni BURK ,  Birgit GERKE ,  Frank PIRRUNG ,  Lucas Benjamin HENDERSON ,  Volodymyr BOYKO ,  Rui DE OLIVEIRA ,  Ingolf HENNIG ,  Miran YU

IPC: C08L63/00 ,  C08G59/40 ,  C08K3/36

Abstract: A resin composition, comprising (a) at least one epoxy resin, and (b) at least one siloxane-type curing agent of formula C22 or C31 (C22) (C31) wherein the resin composition does essentially not contain any fluoride or bromide.

公开(公告)号：US20190248821A1

公开(公告)日：2019-08-15

申请号：US16318573

申请日：2017-07-14

Applicant: BASF SE

Inventor： Carolin LIMBURG ,  Daniel LOEFFLER ,  Hagen WILMER ,  Marc WALTER ,  Matthias REINERS

IPC: C07F15/04 ,  C07F15/06 ,  C23C16/455

CPC classification number: C07F15/04 ,  C07F15/06 ,  C23C16/45553

Abstract: The present invention relates to a process for generating a thin inorganic film on a substrate. In particular, the present invention relates to a process in which a compound of formula (I) is brought into a gaseous or an aerosol state and deposited from the gaseous or aerosol state onto a solid substrate: In the formula (I), R1, R2, R3, R4, and R5 are independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group; p is 1, 2; M is Ni or Co; X is a σ-donating ligand which coordinates M; m is 1 or 2; and n is 0 to 3.

公开(公告)号：US20190003049A1

公开(公告)日：2019-01-03

申请号：US16063603

申请日：2017-01-17

Applicant: BASF SE

Inventor： Falko ABELS ,  Daniel LOEFFLER ,  Hagen WILMER ,  Robert WOLF ,  Christian ROEDL ,  Philipp BUESCHELBERGER

IPC: C23C16/448 ,  C07F15/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln . . . M . . . Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

公开(公告)号：US20180320265A1

公开(公告)日：2018-11-08

申请号：US15775856

申请日：2016-11-18

Applicant: BASF SE

Inventor： Torben ADERMANN ,  Daniel LOEFFLER ,  Carolin LIMBURG ,  Falko ABELS ,  Hagen WILMER ,  Monica GILL ,  Matthew GRIFFITHS ,  Sean BARRY

IPC: C23C16/18 ,  C23C16/455 ,  C07F15/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

公开(公告)号：US20170175267A1

公开(公告)日：2017-06-22

申请号：US15325840

申请日：2015-07-22

Applicant: BASF SE

Inventor： Julia STRAUTMANN ,  Rocco PACIELLO ,  Thomas SCHAUB ,  Felix EICKEMEYER ,  Daniel LOEFFLER ,  Hagen WILMER ,  Udo RADIUS ,  Johannes BERTHEL ,  Florian HERING

IPC: C23C16/455 ,  C07F15/04 ,  C07F15/06

CPC classification number: C23C16/45553 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18 ,  C30B25/08 ,  C30B25/10

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.