公开(公告)号：US20210143280A1

公开(公告)日：2021-05-13

申请号：US17255787

申请日：2020-04-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Fengjuan LIU

IPC: H01L29/786 ,  H01L29/66

Abstract: The present disclosure provides a TFT. The TFT includes an active layer and a gate insulating layer, the active layer includes a first active sub-layer and a second active sub-layer which are arranged in a stacked manner, the second active sub-layer is between the gate insulating layer and the first active sub-layer, a Fermi potential of the first active sub-layer is larger than a Fermi potential of the second active sub-layer, a maximum thickness of a depletion region in the first active sub-layer is equal to a thickness of the first active sub-layer, and a maximum thickness of a depletion region in the second active sub-layer is equal to a thickness of the second active sub-layer.

公开(公告)号：US20190165006A1

公开(公告)日：2019-05-30

申请号：US16322266

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU ,  Youngsuk SONG ,  Hongda SUN

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.

公开(公告)号：US20170263645A1

公开(公告)日：2017-09-14

申请号：US15283517

申请日：2016-10-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU ,  Meili WANG

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L21/32139 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53238 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908

Abstract: A substrate comprising a base, and a copper metallic layer and a first barrier layer disposed on the base in sequence, and further comprising a connecting layer positioned on the first barrier layer; the connecting layer is configured to connect photoresist coated on the connecting layer and the first barrier layer.

公开(公告)号：US20170250378A1

公开(公告)日：2017-08-31

申请号：US15208446

申请日：2016-07-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Fengjuan LIU ,  Hongda SUN

IPC: H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  H01L51/50

CPC classification number: H01L51/56 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5206 ,  H01L2251/303

Abstract: A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode. (FIG. 1)

公开(公告)号：US20160262256A1

公开(公告)日：2016-09-08

申请号：US14353389

申请日：2013-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Hongda SUN ,  Fengjuan LIU

IPC: H05K1/02 ,  H05K3/46

CPC classification number: H05K1/028 ,  H01L21/4846 ,  H01L21/6835 ,  H01L23/00 ,  H01L25/105 ,  H01L51/003 ,  H01L51/5228 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2251/5338 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K3/022 ,  H05K3/4644 ,  H05K2201/0195 ,  H05K2203/0235 ,  H05K2203/068 ,  H01L2924/00

Abstract: A method for fabricating a flexible substrate and a flexible substrate prefabricated component are disclosed, the flexible substrate comprises an electronic device and a flexible layer provided with the electronic device. The fabrication method comprises: disposing a single-sided adhesive layer at a central portion of a surface of a support substrate, an adhesive side of the single-sided adhesive layer being in contact with the support substrate; disposing a double-sided adhesive layer at a peripheral region of the support substrate; disposing the flexible layer on surfaces of the single-sided adhesive layer and the double-sided adhesive layer, the flexible layer being bonded to the double-sided adhesive layer; disposing the electronic device in a region of a surface of the flexible layer corresponding to the single-sided adhesive layer; cutting the flexible layer along a boundary of the electronic device and removing the flexible layer from the single-sided adhesive layer.

Abstract translation: 公开了一种用于制造柔性基板和柔性基板预制部件的方法，柔性基板包括电子装置和设置有电子装置的柔性层。 制造方法包括：在支撑基板的表面的中心部分处设置单面粘合剂层，单面粘合剂层的粘合剂侧与支撑基板接触; 在支撑基板的周边区域设置双面粘合剂层; 将柔性层设置在单面粘合剂层和双面粘合剂层的表面上，柔性层粘合到双面粘合剂层上; 将所述电子器件设置在与所述单面粘合剂层相对应的所述柔性层的表面的区域中; 沿着电子设备的边界切割柔性层并从柔性层从单面粘合剂层移除。

公开(公告)号：US20240389414A1

公开(公告)日：2024-11-21

申请号：US17914415

申请日：2021-06-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei YANG ,  Fengjuan LIU ,  Wei LIU ,  Ce NING ,  Guangcai YUAN

IPC: H10K59/131 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/121 ,  H10K59/124

Abstract: A display panel includes base substrate, second conductive layer, second active layer, third gate insulating layer, third conductive layer in sequence. The second conductive layer includes first conductive part forming first gate of first transistor. The second active layer includes first active part including first and second sub-active parts and third sub-active part therebetween. The first and second sub-active parts form first and second electrodes of first transistor, and portion of the third sub-active part forms channel region of first transistor. Orthographic projection of the first conductive part on the base substrate covers that of the third sub-active part. Orthographic projection of the third gate insulating layer on the base substrate covers that of the first active part. The third conductive layer includes second conductive part forming second gate of first transistor. Orthographic projection of the second conductive part on the base substrate covers that of the channel region.

公开(公告)号：US20240215332A1

公开(公告)日：2024-06-27

申请号：US17908224

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Wei LIU ,  Tianmin ZHOU ,  Kun ZHAO

IPC: H10K59/124 ,  H10K39/34 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K39/34 ,  H10K59/1201

Abstract: The present disclosure provides a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a circuit layer disposed on a base substrate, an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, the circuit layer includes at least one impurity absorption layer and at least one transistor, the transistor includes an active layer, and at least one insulation layer is provided between the impurity absorption layer and the active layer; an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.

公开(公告)号：US20230317826A1

公开(公告)日：2023-10-05

申请号：US18022620

申请日：2022-03-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fengjuan LIU ,  Dongfang WANG ,  Wei LIU ,  Yuhang LU ,  Hongda SUN ,  Ce NING ,  Guangcai YUAN

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/40

CPC classification number: H01L29/66742 ,  H01L29/401 ,  H01L29/7869

Abstract: A method for manufacturing a thin film transistor, and a thin film transistor are provided. The method includes: forming an active layer on a substrate by a single patterning process; forming a gate insulating layer by deposition on a side of the active layer away from the substrate; forming a first via hole and a second via hole penetrating through the gate insulating layer by a single patterning process, the first and second via holes being located at two ends of the active layer respectively; and forming a first electrode, a gate electrode, and a second electrode on the gate insulating layer by a single patterning process, the first and second electrodes being connected to the active layer through the first and second via holes, respectively, and an orthographic projection of the gate electrode on the substrate at least partially overlapping that of the active layer on the substrate.

公开(公告)号：US20210336182A1

公开(公告)日：2021-10-28

申请号：US16611016

申请日：2019-03-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: The present disclosure provides an OLED display substrate, a manufacturing method thereof and a display device. The method for manufacturing an OLED display substrate includes: fabricating, a first conducting layer and a second conducting layer on a substrate, the first conducting layer being located between the second conducting layer and the substrate; fabricating a pixel definition layer on the second conducting layer, the pixel definition layer defining a plurality of open regions; performing a post-bake processing on the pixel definition layer; and removing portions of the second conductive layer at the open regions of the pixel definition layer to expose the first conductive layer under the second conductive layer.

公开(公告)号：US20190088784A1

公开(公告)日：2019-03-21

申请号：US15559098

申请日：2017-03-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/467

Abstract: A thin film transistor, and a method for manufacturing the thin film transistor, a base substrate and a display device are provided. The method includes: forming a semiconductor layer on a base substrate, wherein the semiconductor layer includes a pattern of a first metal oxide and a pattern of a second metal oxide covering the pattern of the first metal oxide; and etching, through a mask, a portion of the pattern of the second metal oxide out of a region of the mask by using etchant, wherein the mask is located within a region of the pattern of the second metal oxide, and the etchant chemically reacts with a surface of a portion of the pattern of the first metal oxide out of the region of the mask, to form conductors serving as a source electrode and a drain electrode.