公开(公告)号：US20110198694A1

公开(公告)日：2011-08-18

申请号：US12707150

申请日：2010-02-17

Applicant: Man Fai NG ,  Bin YANG

Inventor： Man Fai NG ,  Bin YANG

IPC: H01L27/12 ,  H01L21/762

CPC classification number: H01L21/84 ,  H01L21/76267 ,  H01L21/823878 ,  H01L29/66772

Abstract: Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.

Abstract translation: 提供了用于制造在绝缘材料区域内具有阻挡区域的半导体器件的方法和装置，导致从绝缘材料区域的脱气路径。 一种方法包括在靠近半导体材料的隔离区域的绝缘材料内形成阻挡区域，并形成覆盖半导体材料的隔离区域的栅极结构。 阻挡区域与半导体材料的隔离区域相邻，导致绝缘材料内的除气路径。

公开(公告)号：US20100129402A1

公开(公告)日：2010-05-27

申请号：US12577900

申请日：2009-10-13

Applicant: Jixing LIU ,  Bin YANG ,  Xi LAN ,  Xiangping YIN ,  Yinmei BAI ,  Xiaorong HAN ,  Xuerui LI ,  Baoyu LI ,  Yuping FANG ,  Zhiyong LI

Inventor： Jixing LIU ,  Bin YANG ,  Xi LAN ,  Xiangping YIN ,  Yinmei BAI ,  Xiaorong HAN ,  Xuerui LI ,  Baoyu LI ,  Yuping FANG ,  Zhiyong LI

IPC: A61K39/125 ,  C12N15/63

CPC classification number: A61K39/135 ,  A61K39/12 ,  A61K2039/5258 ,  A61K2039/53 ,  A61K2039/552 ,  C12N15/1131 ,  C12N2310/11 ,  C12N2310/111 ,  C12N2770/32134 ,  C12N2830/20 ,  C12N2840/203

Abstract: A double-effective vaccine vector against foot-and-mouth disease virus having a bicistronic expression vector sequence, the bicistronic expression vector sequence is an antisense gene sequence capable of conjugating with 5′ UTR of RNA of the foot-and-mouth disease virus genome and an intact sequence of VP1 structural protein gene of the foot-and-mouth disease virus. Animal experiments show that the vaccine vector provides double effects in terms of gene therapy and gene immunization for the prevention and treatment of foot-and-mouth disease in animals. Also provided are construction methods and methods of use of the vaccine vector.

Abstract translation: 双顺反子表达载体序列是一种双重有效的口蹄疫病毒疫苗载体，双顺反子表达载体序列是能够与口蹄疫病毒基因组RNA的5'UTR共轭的反义基因序列 和口蹄疫病毒的VP1结构蛋白基因的完整序列。 动物实验表明疫苗载体在基因治疗和基因免疫方面提供了双重效果，用于预防和治疗动物口蹄疫。 还提供了疫苗载体的构建方法和使用方法。

公开(公告)号：US20170215465A1

公开(公告)日：2017-08-03

申请号：US15329231

申请日：2015-07-31

Applicant: Bin YANG

Inventor： Bin YANG

IPC: A23L33/00 ,  A23L33/15 ,  A23L33/18 ,  A23L7/10 ,  A23L11/00 ,  A23L33/155 ,  A23L33/16

CPC classification number: A23L33/40 ,  A23L7/198 ,  A23L11/05 ,  A23L33/15 ,  A23L33/155 ,  A23L33/16 ,  A23L33/18 ,  A23V2002/00

Abstract: A comprehensively nutritious instant food includes the following raw ingredients: rice powder 39.593849% to 44.930798%, soybean meal 29.695386% to 33.698099%, protein 8.908616% to 10.109430%, edible fiber 4.949231% to 5.616350%, carotene 0.000099% to 0.000112%, calcium 0.197969% to 0.224654%, iron 0.000356% to 0.000404%, zinc 0.000297% to 0.000337%, copper 0.000040% to 0.000045%, sodium 0.395938% to 0.449308%, potassium 0.395938% to 0.449308%, manganese 0.000040% to 0.000045%, selenium 0.000014% to 0.000016%, iodine 0.000030% to 0.000034%, phosphorus 0.013858% to 0.015726%, magnesium 0.007919% to 0.008986%, fluorine 0.000554% to 0.000629%, vitamin B1 0.000297% to 0.000337%, vitamin B2 0.000040% to 0.000045%, vitamin B6 0.000040% to 0.000045%, vitamin B12 0.000001% to 0.000001%, vitamin B3 0.000396% to 0.000449%, vitamin D 0.000013% to 0.000015%, vitamin K 0.000016% to 0.000018%, vitamin H 0.000059% to 0.000067%, vitamin B 0.000079% to 0.000090%, vitamin E 0.000178% to 0.000202%, vitamin C 0.001188% to 0.001348%, vitamin A 0.000020% to 0.000022%, edible fat 0 to 10.523458%, and refined sugar 0-5.939077%.

公开(公告)号：US20110169083A1

公开(公告)日：2011-07-14

申请号：US12687607

申请日：2010-01-14

Applicant: Bin YANG ,  Rohit PAL ,  Michael HARGROVE

Inventor： Bin YANG ,  Rohit PAL ,  Michael HARGROVE

IPC: H01L29/786 ,  H01L21/86

CPC classification number: H01L21/84 ,  H01L21/845 ,  H01L23/485 ,  H01L27/12 ,  H01L27/1211

Abstract: A method of fabricating a semiconductor device with back side conductive plugs is provided here. The method begins by forming a gate structure overlying a semiconductor-on-insulator (SOI) substrate. The SOI substrate has a support layer, an insulating layer overlying the support layer, an active semiconductor region overlying the insulating layer, and an isolation region outboard of the active semiconductor region. A first section of the gate structure is formed overlying the isolation region and a second section of the gate structure is formed overlying the active semiconductor region. The method continues by forming source/drain regions in the active semiconductor region, and thereafter removing the support layer from the SOI substrate. Next, the method forms conductive plugs for the gate structure and the source/drain regions, where each of the conductive plugs passes through the insulating layer.

Abstract translation: 此处提供制造具有背面导电插头的半导体器件的方法。 该方法通过形成覆盖绝缘体上半导体（SOI）衬底的栅极结构开始。 SOI衬底具有支撑层，覆盖在支撑层上的绝缘层，覆盖绝缘层的有源半导体区域和有源半导体区域外侧的隔离区域。 栅极结构的第一部分形成在隔离区域的上方，栅极结构的第二部分形成在有源半导体区域的上方。 该方法通过在有源半导体区域中形成源极/漏极区域继续，然后从SOI衬底去除支撑层。 接下来，该方法形成用于栅极结构和源极/漏极区域的导电插塞，其中每个导电插塞穿过绝缘层。

公开(公告)号：US20130189839A1

公开(公告)日：2013-07-25

申请号：US13614812

申请日：2012-09-13

Applicant: Michael A. GUILLORN ,  Christian LAVOIE ,  Ghavam G. SHAHIDI ,  Bin YANG ,  Zhen ZHANG

Inventor： Michael A. GUILLORN ,  Christian LAVOIE ,  Ghavam G. SHAHIDI ,  Bin YANG ,  Zhen ZHANG

IPC: H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/458 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming silicide contacts includes forming a dielectric layer on a gate spacer, a gate stack, and a first semiconductor layer. The first semiconductor layer comprises source/drain regions. Contact trenches are formed in the dielectric layer so as to expose at least a portion of the source/drain regions. A second semiconductor layer is formed within the contact trenches. A metallic layer is formed on the second semiconductor layer. An anneal is performed to form a silicide region between the second semiconductor layer and the metallic layer. A conductive contact layer is formed on the metallic layer or the silicide region.

公开(公告)号：US20130102134A1

公开(公告)日：2013-04-25

申请号：US13659907

申请日：2012-10-24

Applicant: Xubin JING ,  Bin YANG ,  Mingsheng GUO

Inventor： Xubin JING ,  Bin YANG ,  Mingsheng GUO

IPC: H01L21/20 ,  B82Y40/00

CPC classification number: H01L29/66083 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/775

Abstract: The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device area; depositing an oxide film on the surface of the above structure; forming a metal pad connected with the SiNW in the SiNW device area; depositing a passivation layer on the surface of the above structure; applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the device area, stopping on the amorphous carbon layer; removing the amorphous carbon layer above the SiNW outside the device area through ashing process to expose the SiNW.

Abstract translation: 本发明提供一种生产硅纳米线器件的方法，包括以下步骤：在衬底上生长SiNW; 有序沉积无定形碳层和电介质抗反射涂层; 通过干蚀刻去除SiNW上方的介电抗反射涂层和无定形碳层的一部分，以暴露SiNW器件区域; 在上述结构的表面上沉积氧化膜; 在SiNW器件区域中形成与SiNW连接的金属焊盘; 在上述结构的表面上沉积钝化层; 施加光刻和蚀刻技术以在金属焊盘上形成接触孔，并在器件区域外的SiNW上方去除钝化层，氧化物膜和介电抗反射涂层，停止在无定形碳层上; 通过灰化处理去除器件区域外的SiNW以上的无定形碳层，以暴露SiNW。

公开(公告)号：US20110303954A1

公开(公告)日：2011-12-15

申请号：US12814346

申请日：2010-06-11

Applicant: Bin YANG ,  Man Fai NG

Inventor： Bin YANG ,  Man Fai NG

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7848 ,  H01L29/045 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

Abstract: Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.

Abstract translation: 提供了半导体器件结构和相关制造方法的装置。 制造半导体器件结构的一种方法包括形成覆盖半导体材料区域的栅极结构，其中栅极结构的宽度与半导体材料的<100>晶体方向对齐。 该方法通过在栅极结构周围形成凹槽并在凹部中形成应力诱导半导体材料来继续。

公开(公告)号：US20210259297A1

公开(公告)日：2021-08-26

申请号：US17037552

申请日：2020-09-29

Applicant: Meiyun ZHANG ,  Shunxi SONG ,  Xue JIANG ,  Bin YANG ,  Jingyi NIE ,  Jiaojun TAN

Inventor： Meiyun ZHANG ,  Shunxi SONG ,  Xue JIANG ,  Bin YANG ,  Jingyi NIE ,  Jiaojun TAN

IPC: A24B3/14 ,  A24B15/12 ,  A24B15/24 ,  A24B3/18

Abstract: A method for increasing bulkiness of reconstituted tobacco by adding tobacco stem particles includes (1) pulverizing a first portion of tobacco stems to obtain tobacco stem particles; (2) classifying the tobacco stem particles with mesh sieves and selecting the tobacco stem particles with a predetermined mesh size; (3) extracting a second portion of the tobacco stems with water and grinding to form a tobacco stem slurry that has a beating degree of 12-14° SR, and mixing the tobacco stem slurry with tobacco leaves in a weight ratio of 6:4 and grinding to obtaining a tobacco slurry that has a beating degree of 18-20° SR; (4) cutting plant fiber pulp boards and dispersing in water to form a plant fiber pulp; (5) preparing a filler solution that contains 10 wt % of a mineral filler; (6) mixing, rolling and drying to obtain the reconstituted tobacco.

公开(公告)号：US20210254286A1

公开(公告)日：2021-08-19

申请号：US17074866

申请日：2020-10-20

Applicant: Meiyun ZHANG ,  Jiaojun TAN ,  Bin YANG ,  Shunxi SONG ,  Jingyi NIE ,  Xue JIANG

Inventor： Meiyun ZHANG ,  Jiaojun TAN ,  Bin YANG ,  Shunxi SONG ,  Jingyi NIE ,  Xue JIANG

IPC: D21H13/26 ,  D21H15/10 ,  D21H21/08 ,  D21H17/67

Abstract: A method of preparing an aramid paper coated with aramid nanofibers includes the following steps: (1) mixing a meta-aramid fibrid slurry and a chopped meta-aramid fiber slurry, filtering, pressing and drying to obtain a meta-aramid paper; (2) mixing potassium hydroxide, deionized water, dimethyl sulfoxide, and para-aramid nanofibers in a container, and stirring to obtain a para-aramid nanofiber coating solution; and (3) applying the para-aramid nanofiber coating solution to a first side of the meta-aramid paper, washing with deionized water, and drying; applying the para-aramid nanofiber coating solution to a second side of the meta-aramid paper, washing with deionized water, and drying; and hot pressing to obtain the aramid paper coated with aramid nanofibers.

公开(公告)号：US20120028924A1

公开(公告)日：2012-02-02

申请号：US13196189

申请日：2011-08-02

Applicant: Brian AQUILA ,  Victor KAMHI ,  Bo PENG ,  Timothy PONTZ ,  Jamal Carlos SAEH ,  Kumar THAKUR ,  Bin YANG

Inventor： Brian AQUILA ,  Victor KAMHI ,  Bo PENG ,  Timothy PONTZ ,  Jamal Carlos SAEH ,  Kumar THAKUR ,  Bin YANG

IPC: A61K31/506 ,  A61K31/675 ,  A61P35/00 ,  C07D405/14 ,  C07D413/14 ,  A61K31/5377 ,  C07D401/14 ,  C07F9/6584

CPC classification number: C07D401/14 ,  C07F9/65685

Abstract: The present invention relates to compounds of Formula (I) and/or Formula (Ia): and to their salts, pharmaceutical compositions, methods of use, and methods for their preparation. These compounds inhibit ALK kinase activity, and thus may be used for the treatment of cancer.

Abstract translation: 本发明涉及式（I）和/或式（Ia）化合物及其盐，药物组合物，使用方法及其制备方法。 这些化合物抑制ALK激酶活性，因此可用于治疗癌症。