LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF CORRECTING A MASK
    11.
    发明申请
    LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF CORRECTING A MASK 有权
    平面设备,设备制造方法及校正方法

    公开(公告)号:US20120257184A1

    公开(公告)日:2012-10-11

    申请号:US13438491

    申请日:2012-04-03

    IPC分类号: G03B27/54

    摘要: A lithographic apparatus includes a mask correction system configured to controllably and locally alter a property of a mask, for example transmissivity, transmissivity to a particular polarization state, birefringence and/or geometry. The mask correction system, in an embodiment, directs a beam of radiation onto a spot of the mask, the mask being scanned relative to the mask correction system. The mask correction system may include an arrangement to irradiate multiple spots on the mask substantially simultaneously.

    摘要翻译: 光刻设备包括掩模校正系统,其被配置为可控地和局部地改变掩模的性质,例如透射率,对特定偏振状态的透射率,双折射和/或几何形状。 在一个实施例中,掩模校正系统将辐射束引导到掩模的光斑上,掩模相对于掩模校正系统被扫描。 掩模校正系统可以包括基本上同时照射掩模上的多个点的装置。

    LITHOGRAPHIC PROJECTION APPARATUS AND DEVICE MANUFACTURING METHOD

    公开(公告)号:US20130057841A1

    公开(公告)日:2013-03-07

    申请号:US13544656

    申请日:2012-07-09

    IPC分类号: G03B27/54

    摘要: A lithographic projection apparatus is disclosed where at least part of a space between a projection system of the apparatus and a substrate is filled with a liquid by a liquid supply system. The projection system is separated into two separate physical parts. With substantially no direct connection between the two parts of the projection system, vibrations induced in a first of the two parts by coupling of forces through the liquid filling the space when the substrate moves relative to the liquid supply system affects substantially only the first part of the projection system and not the other second part.

    Lithographic Apparatus and Device Manufacturing Method
    14.
    发明申请
    Lithographic Apparatus and Device Manufacturing Method 有权
    光刻设备和器件制造方法

    公开(公告)号:US20090263734A1

    公开(公告)日:2009-10-22

    申请号:US12493592

    申请日:2009-06-29

    IPC分类号: G03F7/20 G21G5/00

    CPC分类号: G03F7/70341

    摘要: In optical maskless lithography, scanning of a single substrate is typically much slower than in conventional lithography. Solutions are described for the adoption of immersion lithography techniques into optical maskless lithography and in particular provides one or more solutions to reduce the amount of time which the immersion liquid is in contact with any given part of the top surface of the substrate during imaging.

    摘要翻译: 在无光掩模光刻中,单个衬底的扫描通常比常规光刻中慢得多。 描述了将浸没式光刻技术应用于无光掩模光刻中的解决方案,并且特别地提供了一种或多种解决方案,以减少在成像期间浸没液体与衬底的顶表面的任何给定部分接触的时间量。