公开(公告)号：US20220209149A1

公开(公告)日：2022-06-30

申请号：US17608291

申请日：2020-05-07

Applicant: Corning Incorporated ,  UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Inventor： Mingqian He ,  Jin Jang ,  Xiuling Li ,  Robert George Manley ,  Karan Mehrotra ,  Nikolay Zhelev Zhelev

IPC: H01L51/05 ,  H01L51/00

Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

公开(公告)号：US20210135114A1

公开(公告)日：2021-05-06

申请号：US16471446

申请日：2017-12-19

Applicant: CORNING INCORPORATED

Inventor： Robert George Manley ,  Karan Mehrotra ,  Barry James Paddock ,  Rajesh Vaddi ,  Nikolay Zhelev Zhelev ,  Bin Zhu

IPC: H01L51/00 ,  H01L51/05 ,  G03F7/20

Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material

公开(公告)号：US20210135109A1

公开(公告)日：2021-05-06

申请号：US16635690

申请日：2018-07-30

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Yang Li ,  Karan Mehrotra ,  Hongxiang Wang

IPC: H01L51/00 ,  C08G61/12 ,  C09D127/20

Abstract: The present disclosure describes a method of crosslinking fluoroelastomers, or more precisely thermally-crosslinkable fluorine-containing polymers, and to devices such as OTFTs (organic thin film transistors) incorporating such polymers. In some embodiments, a method comprises mixing: a solvent, a thermally crosslinkable fluorine-containing polymer, and one or more organic bases to form a mixed solution. The mixed solution is deposited over a substrate to form a first layer. The first layer is then crosslinked by thermal treatment to form a crosslinked first layer. The polymer is selected from: homopolymers of vinylidene fluoride; and copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. The one or more organic bases each have a pKa of 10 to 14.

公开(公告)号：US20190306430A1

公开(公告)日：2019-10-03

申请号：US16443148

申请日：2019-06-17

Applicant: CORNING INCORPORATED

Inventor： Joseph Marshall Kunick ,  Karan Mehrotra ,  Mark J Soulliere ,  Paul Michael Then

IPC: H04N5/232 ,  G02B7/09 ,  H04N5/225 ,  G02B7/08 ,  G02B27/64 ,  G02B3/14

Abstract: A camera module includes an image sensor, a lens assembly, and a mechanical actuator. The lens assembly is positioned to focus an image on the image sensor and includes a variable focus lens. The mechanical actuator causes relative translation between the lens assembly and the image sensor in each of an X-direction parallel to a first lateral axis and a Y-direction parallel to a second lateral axis. The first lateral axis is substantially perpendicular to an optical axis of the lens assembly, and the second lateral axis substantially perpendicular to each of the optical axis and the first lateral axis. The lens assembly is fixed relative to the image sensor in each of a first rotational direction about the first lateral axis and a second rotational direction about the second lateral axis.

公开(公告)号：US20180169826A1

公开(公告)日：2018-06-21

申请号：US15846778

申请日：2017-12-19

Applicant: Corning Incorporated

Inventor： Jonas Bankaitis ,  Karan Mehrotra

IPC: B24B37/04

CPC classification number: B24B37/042

Abstract: A method of manufacturing a sheet of fused silica includes polishing a sheet of fused silica having a thickness of less than 500 μm and a major face surface area of at least 6π square inches. The polishing is performed by removing less than 100 micrometers depth of material of a major surface of the sheet, such as by bonding the sheet to a substrate, polishing a first major side of the sheet, debonding the sheet from the substrate, flipping the sheet, bonding the flipped sheet to the substrate or a new substrate, and polishing a second major side of the sheet. Prior to polishing, the sheet has a peak-to-valley waviness of at least 1 micrometer, but after polishing has peak-to-valley waviness less than 500 nanometers.

公开(公告)号：US20230337535A1

公开(公告)日：2023-10-19

申请号：US18206898

申请日：2023-06-07

Applicant: CORNING INCORPORATED ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H10K85/60 ,  H10K71/12 ,  H10K71/20

CPC classification number: H10K85/6572 ,  H10K71/12 ,  H10K71/231 ,  H10K85/654 ,  H10K85/655 ,  H10K85/6574 ,  H10K85/6576

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

公开(公告)号：US11737361B2

公开(公告)日：2023-08-22

申请号：US17873240

申请日：2022-07-26

Applicant: Corning Incorporated ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/0072 ,  H01L51/0003 ,  H01L51/0017 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0074

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

公开(公告)号：US20220255208A1

公开(公告)日：2022-08-11

申请号：US17727111

申请日：2022-04-22

Applicant: CORNING INCORPORATED

Inventor： Michael Edward Badding ,  Ming-Jun Li ,  Karan Mehrotra ,  Cheng-Gang Zhuang

IPC: H01P3/16 ,  G02B6/10 ,  H01P11/00

Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 μm to 500 μm and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 μm to 200 μm thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.

公开(公告)号：US20200217816A1

公开(公告)日：2020-07-09

申请号：US16703124

申请日：2019-12-04

Applicant: Corning Incorporated ,  Spring Foundation of National Chiao Tung University

Inventor： Mingqian He ,  Yang Li ,  Hung-Chuan Liu ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: G01N27/414 ,  G01N27/12 ,  H01L51/00

Abstract: Described herein are ultrasensitive gas sensors based on a vertical-channel organic semiconductor (OSC) diode, along with methods for making such devices, and uses thereof. The organic sensing layer comprises a fused thiophene-based organic polymer that connects top and bottom electrodes to deliver a vertical current flow. The nano-porous top-electrode structure enables the contact between ambient gas molecules and the vertical organic channel. The device has high sensitivity, is easy to process, and has a long shelf life.

公开(公告)号：US20200212304A1

公开(公告)日：2020-07-02

申请号：US16620050

申请日：2018-06-01

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Yang Li ,  James Robert Matthews ,  Karan Mehrotra ,  Weijun Niu ,  Arthur Lawrence Wallace

IPC: H01L51/00 ,  C08G61/12

Abstract: Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.