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公开(公告)号:US11342649B2
公开(公告)日:2022-05-24
申请号:US17001909
申请日:2020-08-25
Applicant: CORNING INCORPORATED
Inventor: Michael Edward Badding , Ming-Jun Li , Karan Mehrotra , Cheng-Gang Zhuang
Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 μm to 500 μm and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 μm to 200 μm thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.
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公开(公告)号:US11329228B2
公开(公告)日:2022-05-10
申请号:US16471446
申请日:2017-12-19
Applicant: CORNING INCORPORATED
Inventor: Robert George Manley , Karan Mehrotra , Barry James Paddock , Rajesh Vaddi , Nikolay Zhelev Zhelev , Bin Zhu
Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.
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公开(公告)号:US20210094865A1
公开(公告)日:2021-04-01
申请号:US17038961
申请日:2020-09-30
Applicant: CORNING INCORPORATED
Inventor: Mark Francis Krol , Karan Mehrotra
Abstract: A method for forming a glass stack, comprising: obtaining a glass sheet; selecting a plurality of portions of the glass sheet having a matching glass characteristic, wherein the glass characteristic is at least one of warp, bow, total thickness variation (TTV), and wedge; cutting a plurality of glass wafers from the selected portions of the glass sheet, and stacking the plurality of glass wafers to form a glass stack.
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公开(公告)号:US20210063637A1
公开(公告)日:2021-03-04
申请号:US17001909
申请日:2020-08-25
Applicant: CORNING INCORPORATED
Inventor: Michael Edward Badding , Ming-Jun Li , Karan Mehrotra , Cheng-Gang Zhuang
IPC: G02B6/10
Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 μm to 500 μm and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 μm to 200 μm thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.
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5.
公开(公告)号:US20200220084A1
公开(公告)日:2020-07-09
申请号:US16695371
申请日:2019-11-26
Applicant: Corning Incorporated , NATIONAL CHIAO TUNG UNIVERSITY
Inventor: Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
IPC: H01L51/00
Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.
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公开(公告)号:US12058933B2
公开(公告)日:2024-08-06
申请号:US18206898
申请日:2023-06-07
Inventor: Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
CPC classification number: H10K85/6572 , H10K71/12 , H10K71/231 , H10K85/654 , H10K85/655 , H10K85/6574 , H10K85/6576
Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.
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公开(公告)号:US11437587B2
公开(公告)日:2022-09-06
申请号:US16695371
申请日:2019-11-26
Applicant: Corning Incorporated , NATIONAL CHIAO TUNG UNIVERSITY
Inventor: Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.
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公开(公告)号:US11283023B2
公开(公告)日:2022-03-22
申请号:US16620050
申请日:2018-06-01
Applicant: Corning Incorporated
Inventor: Mingqian He , Yang Li , James Robert Matthews , Karan Mehrotra , Weijun Niu , Arthur Lawrence Wallace
Abstract: Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.
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公开(公告)号:US20200148580A1
公开(公告)日:2020-05-14
申请号:US16662500
申请日:2019-10-24
Applicant: Corning Incorporated
Abstract: A glass article, having SiO2 from about 61 wt. % to about 62 wt. %; Al2O3 from about 18 wt. % to about 18.4 wt. %; B2O3 from about 7.1 wt. % to about 8.3 wt. %; MgO from about 1.9 wt. % to about 2.2 wt. %; CaO from about 6.5 wt. % to about 6.9 wt. %; SrO from about 2.5 wt. % to about 3.6 wt. %; BaO from about 0.6 wt. % to about 1.0 wt. %; and SnO2 from about 0.1 wt. % to about 0.2 wt. %, a refractive index of about 1.515 to about 1.517 at an optical wavelength of about 589 nm; a VD of about 57 to about 67; less than or equal to about 5 μm total thickness variation over a component diameter of about 200 mm, less than or equal to about 20 μm warp over a component diameter of about 200 mm, and wedge less than or equal to about 0.1 arcmin.
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10.
公开(公告)号:US12232338B2
公开(公告)日:2025-02-18
申请号:US17608291
申请日:2020-05-07
Inventor: Mingqian He , Jin Jang , Xiuling Li , Robert George Manley , Karan Mehrotra , Nikolay Zhelev Zhelev
Abstract: A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.
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