公开(公告)号：US12058933B2

公开(公告)日：2024-08-06

申请号：US18206898

申请日：2023-06-07

Applicant: CORNING INCORPORATED ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H01L51/50 ,  H10K71/12 ,  H10K71/20 ,  H10K85/60

CPC classification number: H10K85/6572 ,  H10K71/12 ,  H10K71/231 ,  H10K85/654 ,  H10K85/655 ,  H10K85/6574 ,  H10K85/6576

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

公开(公告)号：US20230337535A1

公开(公告)日：2023-10-19

申请号：US18206898

申请日：2023-06-07

Applicant: CORNING INCORPORATED ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H10K85/60 ,  H10K71/12 ,  H10K71/20

CPC classification number: H10K85/6572 ,  H10K71/12 ,  H10K71/231 ,  H10K85/654 ,  H10K85/655 ,  H10K85/6574 ,  H10K85/6576

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

公开(公告)号：US11737361B2

公开(公告)日：2023-08-22

申请号：US17873240

申请日：2022-07-26

Applicant: Corning Incorporated ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/0072 ,  H01L51/0003 ,  H01L51/0017 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0074

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

公开(公告)号：US11342649B2

公开(公告)日：2022-05-24

申请号：US17001909

申请日：2020-08-25

Applicant: CORNING INCORPORATED

Inventor： Michael Edward Badding ,  Ming-Jun Li ,  Karan Mehrotra ,  Cheng-Gang Zhuang

IPC: H01P3/16 ,  G02B6/10 ,  H01P11/00

Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 μm to 500 μm and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 μm to 200 μm thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.

公开(公告)号：US11329228B2

公开(公告)日：2022-05-10

申请号：US16471446

申请日：2017-12-19

Applicant: CORNING INCORPORATED

Inventor： Robert George Manley ,  Karan Mehrotra ,  Barry James Paddock ,  Rajesh Vaddi ,  Nikolay Zhelev Zhelev ,  Bin Zhu

IPC: H01L51/00 ,  G03F7/20 ,  H01L51/05 ,  G03F7/40

Abstract: A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material.

公开(公告)号：US20210094865A1

公开(公告)日：2021-04-01

申请号：US17038961

申请日：2020-09-30

Applicant: CORNING INCORPORATED

Inventor： Mark Francis Krol ,  Karan Mehrotra

IPC: C03B33/02 ,  B32B17/06 ,  C03C3/091

Abstract: A method for forming a glass stack, comprising: obtaining a glass sheet; selecting a plurality of portions of the glass sheet having a matching glass characteristic, wherein the glass characteristic is at least one of warp, bow, total thickness variation (TTV), and wedge; cutting a plurality of glass wafers from the selected portions of the glass sheet, and stacking the plurality of glass wafers to form a glass stack.

公开(公告)号：US20210063637A1

公开(公告)日：2021-03-04

申请号：US17001909

申请日：2020-08-25

Applicant: CORNING INCORPORATED

Inventor： Michael Edward Badding ,  Ming-Jun Li ,  Karan Mehrotra ,  Cheng-Gang Zhuang

IPC: G02B6/10

Abstract: The THz waveguides disclosed herein are used to transmit signals having a THz frequency in the range from 0.1 THz to 10 THz and include an alumina core surrounded by an optional cladding. The core may have a diameter (D1) in the range from 10 μm to 500 μm and may be comprised of a ceramic ribbon having a dielectric constant (Dk). The optional cladding may have a dielectric constant (Dk) less than the core. The THz waveguides can be formed using a continuous firing process and nano-perforation technology that enables access to a wide form factor range. In one example, rectangular waveguides, or ribbons, may be fabricated in the 10 μm to 200 μm thick range at widths in the range from sub-millimeters to several meters and lengths in the range from millimeters to several hundred meters.

公开(公告)号：US20200220084A1

公开(公告)日：2020-07-09

申请号：US16695371

申请日：2019-11-26

Applicant: Corning Incorporated ,  NATIONAL CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H01L51/00

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

公开(公告)号：US11437587B2

公开(公告)日：2022-09-06

申请号：US16695371

申请日：2019-11-26

Applicant: Corning Incorporated ,  NATIONAL CHIAO TUNG UNIVERSITY

Inventor： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC: H01L51/50 ,  H01L51/00

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

公开(公告)号：US11283023B2

公开(公告)日：2022-03-22

申请号：US16620050

申请日：2018-06-01

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Yang Li ,  James Robert Matthews ,  Karan Mehrotra ,  Weijun Niu ,  Arthur Lawrence Wallace

IPC: H01L51/00 ,  C08G61/12 ,  H01L51/05

Abstract: Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.