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    Methods for making WC-containing bodies
    11.
    发明授权
    Methods for making WC-containing bodies 失效
    制作含WC体的方法

    公开(公告)号：US5612264A

    公开(公告)日：1997-03-18

    申请号：US555944

    申请日：1995-11-13

    申请人： Robert T. Nilsson ,  Richard T. Fox ,  Stephen D. Dunmead

    发明人： Robert T. Nilsson ,  Richard T. Fox ,  Stephen D. Dunmead

    IPC分类号： C04B35/56

    CPC分类号： C04B35/6455 ,  C04B35/5607 ,  C04B35/5611 ,  C04B35/5622 ,  C04B35/5626 ,  C04B35/58007 ,  C04B35/645

    摘要： A method of forming a low level carbon high-density tungsten carbide-containing material includes sintering a preform which contains tungsten carbide powder and has a composition such that the resulting sintered material has at most 6.05 weight percent tungsten-bound carbon based on the total weight of tungsten and tungsten-bound carbon. This low level of carbon may be achieved by, prior to the sintering step, oxidizing the tungsten carbide powder sufficiently to achieve the desired substoichiometric carbon level in the sintered product or by adding a carbon-lowering material selected from the group consisting of tungsten, ditungsten carbide, and tungsten oxide. Optionally, other materials can be present in the preform such as carbon-getter metals and compounds thereof. The carbon-getter metals are those metals of which the carbides thereof are more thermodynamically stable than monotungsten carbide.

    摘要翻译： 形成低碳碳高密度碳化钨的材料的方法包括烧结含有碳化钨粉末的预成型体，并且具有使得所得烧结材料基于总重量具有至多6.05重量％的钨结合碳的组成 的钨和钨结合的碳。 这种低水平的碳可以通过在烧结步骤之前充分氧化碳化钨粉末以达到烧结产品中所需的亚化学计量碳水平，或通过添加选自钨，二钨的碳的降低材料 碳化物和氧化钨。 任选地，其它材料可以存在于预成型体中，例如碳吸收剂金属及其化合物。 碳吸收剂金属是其碳化物比单碳化钨更具有热力学稳定性的金属。

    Home bathing unit
    16.
    发明授权
    Home bathing unit 失效
    家庭洗浴单元

    公开(公告)号：US4546506A

    公开(公告)日：1985-10-15

    申请号：US653558

    申请日：1984-09-24

    申请人： Raymond T. Houle ,  Frederick A. Kilbourn ,  James E. De Kraker ,  Robert T. Nilsson

    发明人： Raymond T. Houle ,  Frederick A. Kilbourn ,  James E. De Kraker ,  Robert T. Nilsson

    IPC分类号： A61H33/00 ,  A47K3/00 ,  E04H1/12 ,  A47K3/02

    CPC分类号： A47K3/006

    摘要： A bathing unit is particularly designed for home use, and includes a bathtub with an access opening in one side for easy ingress and egress, and a vertically sliding door to close the access opening. The bathing unit has a unique, combination door guide and grab bar arrangement, an adjustable control console, and a power door lock, all of which permit the bather to readily operate the door by himself, and to adjust the water temperature, flow and whirlpool from a seated position within the bathtub. The bather can receive total bathing and whirlpool therapy in private, without the need for an assistant. The combination door guide and grab bar arrangement includes a pair of support rods located on either side of the access opening, which function both as a track on which the door smoothly and easily glides, and also as vertical grab bars, which greatly facilitate entering and exiting the bathtub, and do not interfer with the operation of the door. The adjustable control console allows a seated bather to move the bathing controls to a convenient location within easy reach. The power door lock securely closes the door to a fully closed and sealed position without significant manual effort, and includes a remote actuator located on the control console to further facilitate the use of the bathing unit without an attendant, or other assistance.

    摘要翻译： 洗浴单元特别设计用于家庭使用，并且包括具有一侧的入口开口用于容易进出的浴缸和用于关闭进入开口的垂直滑动门。 洗澡单元具有独特的组合门引导和抓斗布置，可调控制台和电动门锁，所有这些都允许沐浴者自己轻松操作门，并调节水温，流量和漩涡 从浴缸内的就座位置。 沐浴者可以私人接受全面的沐浴和漩涡疗法，无需助手。 组合门引导和抓斗布置包括位于进入开口两侧的一对支撑杆，其作用在门平滑且容易地滑动的轨道上，并且还用作垂直抓杆，这极大地方便了进入和 离开浴缸，不要干扰门的操作。 可调节的控制台允许一个坐着的沐浴者将洗澡控制器移动到方便的位置，方便到达。 电动门锁牢固地将门关闭到完全关闭和密封的位置，而不需要大量的手动操作，并且包括位于控制台上的远程致动器，以进一步方便使用洗浴单元而无需服务员或其他帮助。

    CHALCOGENIDE-BASED MATERIALS AND METHODS OF MAKING SUCH MATERIALS UNDER VACUUM USING POST-CHALCOGENIZATION TECHNIQUES
    17.
    发明申请
    CHALCOGENIDE-BASED MATERIALS AND METHODS OF MAKING SUCH MATERIALS UNDER VACUUM USING POST-CHALCOGENIZATION TECHNIQUES 审中-公开
    基于氯化铝的材料和使用后处理技术在真空下制造这种材料的方法

    公开(公告)号：US20110284134A1

    公开(公告)日：2011-11-24

    申请号：US13105977

    申请日：2011-05-12

    申请人： Beth M. Nichols ,  Robert T. Nilsson ,  Marc G. Langlois ,  Rentian Xiong

    发明人： Beth M. Nichols ,  Robert T. Nilsson ,  Marc G. Langlois ,  Rentian Xiong

    IPC分类号： C23C8/62

    CPC分类号： C23C14/24 ,  C23C14/0623 ,  C23C14/34 ,  C23C14/5806 ,  C23C14/5866

    摘要： The present invention provides strategies for making high quality CIGS photoabsorbing compositions from sputtered precursor film(s). The precursors are converted into CIGS photoabsorbing material via a chalcogenizing treatment (also referred to as “post-chalcogenization,” including, e.g., “post-selenization” when Se is used and/or “post-sulfurization” when S is used) using techniques that allow the post-chalcogenizing treatment to occur under atypically low pressure conditions. Consequently, the strategies of the invention are readily incorporated into batch processes or continuous processes such as roll-to-roll process occurring under vacuum. The present invention is useful at lab, pilot plant, and industrial scales.

    摘要翻译： 本发明提供了从溅射前体膜制备高品质CIGS光吸收组合物的策略。 通过硫化物处理（也称为“后硫属化”）将前体转化为CIGS光吸收材料，其中包括例如当使用Se时使用Se和/或“后硫化”时使用“硒化后”），使用 允许后硫族化处理在非典型低压条件下发生的技术。 因此，本发明的策略很容易地并入分批过程或连续过程中，例如在真空下发生卷对卷过程。 本发明在实验室，试验工厂和工业规模上有用。

    CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS
    18.
    发明申请
    CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS 有权
    基于氯化铝的材料和改进的制造这种材料的方法

    公开(公告)号：US20110226336A1

    公开(公告)日：2011-09-22

    申请号：US13047190

    申请日：2011-03-14

    申请人： Jennifer E. Gerbi ,  Marc G. Langlois ,  Robert T. Nilsson

    发明人： Jennifer E. Gerbi ,  Marc G. Langlois ,  Robert T. Nilsson

    IPC分类号： H01L31/0264 ,  C23C14/34 ,  C23C14/06 ,  G02F1/361

    CPC分类号： H01L31/0749 ,  C23C14/0623 ,  C23C14/3464 ,  C23C14/5866 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02631

    摘要： The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.

    摘要翻译： 本发明提供了从含有亚化学计量量的硫族元素的前体膜制备高品质CIGS光吸收材料的策略。 通过与前体的一种或多种其它组分的共溅射将硫族化合物并入到CIGS前体膜中。 当前体的全部或一部分具有其它结构的情况下，还可以进行任选的退火以将前体转化为更理想的黄铜矿结晶形式。 所得前体通常相对于硫属元素是亚化学计量的并且具有非常差的电子特性。 通过硫属化处理将这些前体转化成CMS光吸收材料发生显着降低的界面空隙含量。 所得到的CIGS材料在所得到的光伏器件中显示出对其它层的优异粘合性。 Ga迁移也显着降低，并且所得膜在膜的顶部或底部具有优化的Ga分布，其改善了使用该膜制备的光电装置的质量。

    Chalcogenide-based materials and improved methods of making such materials
    19.
    发明授权
    Chalcogenide-based materials and improved methods of making such materials 有权
    基于硫族化物的材料和制备这种材料的改进方法

    公开(公告)号：US08993882B2

    公开(公告)日：2015-03-31

    申请号：US13047190

    申请日：2011-03-14

    申请人： Jennifer E. Gerbi ,  Marc G. Langlois ,  Robert T. Nilsson

    发明人： Jennifer E. Gerbi ,  Marc G. Langlois ,  Robert T. Nilsson

    IPC分类号： H01L31/0264 ,  H01L21/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/58

    CPC分类号： H01L31/0749 ,  C23C14/0623 ,  C23C14/3464 ,  C23C14/5866 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02631

    摘要： The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.

    摘要翻译： 本发明提供了从含有亚化学计量量的硫族元素的前体膜制备高品质CIGS光吸收材料的策略。 通过与前体的一种或多种其它组分的共溅射将硫族化合物并入到CIGS前体膜中。 当前体的全部或一部分具有其它结构的情况下，还可以进行任选的退火以将前体转化为更理想的黄铜矿结晶形式。 所得前体通常相对于硫属元素是亚化学计量的并且具有非常差的电子特性。 通过硫属化处理将这些前体转化成CMS光吸收材料发生显着降低的界面空隙含量。 所得到的CIGS材料在所得到的光伏器件中显示出对其它层的优异粘合性。 Ga迁移也显着降低，并且所得膜在膜的顶部或底部具有优化的Ga分布，其改善了使用该膜制备的光电装置的质量。