公开(公告)号：US07411234B2

公开(公告)日：2008-08-12

申请号：US10747307

申请日：2003-12-30

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687

Abstract: A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.

Abstract translation: 公开了CMOS图像传感器和制造方法。 晶体管的栅极形成在单位像素的有源区中，并且通过将杂质离子注入半导体衬底来限定用于光电二极管的扩散区。 作为抵抗离子注入的掩模层的光致抗蚀剂的图案以这样的方式形成在半导体衬底上，使得它们具有隔离层的边界部分，以便不使所定义的光电二极管的边界与 隔离层。 通过在光电二极管的扩散区域与隔离层之间的边界部分处的杂质的离子注入的损害被防止，这降低了COMS图像传感器的暗电流。

公开(公告)号：US07354789B2

公开(公告)日：2008-04-08

申请号：US10982643

申请日：2004-11-04

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

Abstract: CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.

Abstract translation: CMOS图像传感器及其制造方法，CMOS图像传感器包括具有限定在其中的有源区和器件隔离区的第二导电型半导体衬底，其中有源区具有限定在其中的光电二极管区和晶体管区， 在器件隔离区域的半导体衬底中的隔离膜，在光电二极管区域的半导体衬底中的第一导电类型杂质区域，与器件隔离膜间隔一定距离的第一导电类型杂质区域和第二导电类型第一杂质 在第一导电型杂质区域和器件隔离膜之间的半导体衬底中的区域，从而减少在光电二极管区域和场区域之间的界面处的产生暗电流。

公开(公告)号：US07241671B2

公开(公告)日：2007-07-10

申请号：US11319067

申请日：2005-12-28

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/38 ,  H01L21/76

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

Abstract: A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and an ion implantation prevention layer formed in the vicinity of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.

Abstract translation: CMOS图像传感器包括具有有源区和器件隔离区的第一导电类型半导体衬底，形成在半导体衬底的器件隔离区中的器件隔离膜，形成在半导体的有源区中的第二导电型扩散区 衬底和形成在器件隔离膜附近的离子注入防止层，包括器件隔离膜和第二导电类型扩散区之间的边界部分。

公开(公告)号：US07056647B2

公开(公告)日：2006-06-06

申请号：US10749648

申请日：2003-12-30

Applicant: Sung Mun Jung ,  Chang Hun Han

Inventor： Sung Mun Jung ,  Chang Hun Han

IPC: G03C5/00

CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11531

Abstract: A flash memory device having a reduced source resistance and a fabrication method thereof are disclosed. An example flash memory includes a cell region including a gate, a source line, a drain contact, and a cell trench area for device isolation on a silicon substrate. The example flash memory also includes a peripheral region positioned around the cell region and including a subsidiary circuit and a peripheral trench area for device isolation on the silicon substrate, wherein the cell trench area of the cell region is shallower than the peripheral trench area of the peripheral region.

Abstract translation: 公开了一种具有降低的源极电阻的闪存器件及其制造方法。 示例性闪存包括包括栅极，源极线，漏极接触和用于硅衬底上的器件隔离的沟道区域的单元区域。 示例性闪存还包括围绕单元区域定位的外围区域，并且包括用于在硅衬底上进行器件隔离的辅助电路和外围沟槽区域，其中，单元区域的单元沟槽区域比所述栅极区域的外围沟槽区域浅 周边地区。

公开(公告)号：US06916701B2

公开(公告)日：2005-07-12

申请号：US10235773

申请日：2002-09-05

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8246 ,  H01L23/52 ,  H01L27/088 ,  H01L27/10 ,  H01L27/105 ,  H01L27/112 ,  H01L21/8239

CPC classification number: H01L27/11266 ,  H01L27/105 ,  H01L27/11293

Abstract: Disclosed is a method for fabricating a silicide layer of a flat cell memory device. The disclosed method comprises the steps of: providing a silicon substrate whereon a flat cell array region and a peripheral circuit region are defined; forming a word line and a bit diffusion layer on the flat cell array region of the substrate and a word line and source/drain junction on the peripheral circuit region; forming a gap fill insulating layer to fill up the gap between the word lines; removing the gap fill insulating layer on the peripheral circuit region; forming an insulating layer on the whole substrate; dry etching the insulating layer to expose a surface of word line, and a surface of the substrate of the peripheral circuit region, thereby forming a spacer on a side wall of the word line of the peripheral circuit region; and forming a silicide layer on the upper part of the word line of the flat cell array region and, at the same time, forming a salicide layer on the upper part of the word line and the surface of the substrate of the peripheral circuit region.

Abstract translation: 公开了一种制造扁平单元存储器件的硅化物层的方法。 所公开的方法包括以下步骤：提供限定扁平单元阵列区域和外围电路区域的硅衬底; 在基板的平坦单元阵列区域上形成字线和位扩散层，并在外围电路区域上形成字线和源极/漏极结; 形成间隙填充绝缘层以填满字线之间的间隙; 去除外围电路区域上的间隙填充绝缘层; 在整个基板上形成绝缘层; 干蚀刻绝缘层以露出字线的表面和外围电路区域的基板的表面，由此在外围电路区域的字线的侧壁上形成间隔物; 在平坦单元阵列区域的字线的上部形成硅化物层，同时在字线的上部和外围电路区域的基板的表面上形成自对准硅化物层。

公开(公告)号：US07880205B2

公开(公告)日：2011-02-01

申请号：US12234991

申请日：2008-09-22

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/108 ,  H01L29/04 ,  H01L31/062 ,  H01L31/113 ,  H01L31/036

CPC classification number: H01L27/14643 ,  H01L27/14636

Abstract: Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.

Abstract translation: 公开了一种图像传感器。 图像传感器包括：包括单位像素的半导体衬底;在半导体衬底上形成有金属互连的层间绝缘层;对应于单位像素形成在层间绝缘层上的多个底部电极，多个底部电极包括底部电极 具有至少两种不同尺寸的光电二极管，形成在包括底部电极的层间电介质层上的光电二极管，以及与单位像素相对应的在光电二极管上形成的滤色器。

公开(公告)号：US07838917B2

公开(公告)日：2010-11-23

申请号：US12379111

申请日：2009-02-12

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

Abstract translation: 一种CMOS图像传感器及其制造方法，其中CMOS图像传感器在光电二极管和隔离层之间的边界区域具有最小化的暗电流。 本发明包括在衬底的器件隔离区域中形成的第一导电型掺杂区域，围绕隔离区域的第一导电型掺杂区域和形成在隔离层和第一导电型之间的介电层 掺杂区域，其中所述第一导电型掺杂区域和所述介电层位于所述隔离层和第二导电型扩散区域之间。

公开(公告)号：US07572663B2

公开(公告)日：2009-08-11

申请号：US11615096

申请日：2006-12-22

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643

Abstract: A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area, and LDD region; selectively removing the interlayer dielectric layer such that the interlayer dielectric layer remains on the photodiode area; performing a first heat treatment process; sequentially forming a first insulating layer and a second insulating layer on the semiconductor substrate, where the etching selectivity of the first insulating layer is different from the etching selectivity of the second insulating layer; selectively etching the second insulating layer to form spacers on sidewalls of the gate electrode; selectively removing the first insulating layer to expose a source/drain area and forming a high-density N-type diffusion area in the exposed source/drain area; performing a second heat treatment process; and forming a metal silicide layer the high-density N-type diffusion area.

Abstract translation: 提供了一种用于制造CMOS图像传感器的方法。 该方法可以包括在包括栅电极，光电二极管区域和LDD区域的半导体衬底上形成层间电介质层; 选择性地去除所述层间电介质层，使得所述层间电介质层保留在所述光电二极管区域上; 执行第一热处理过程; 在所述半导体衬底上依次形成第一绝缘层和第二绝缘层，其中所述第一绝缘层的蚀刻选择性不同于所述第二绝缘层的蚀刻选择性; 选择性地蚀刻第二绝缘层以在栅电极的侧壁上形成间隔物; 选择性地去除第一绝缘层以暴露源极/漏极区域并在暴露的源极/漏极区域中形成高密度N型扩散区域; 执行第二热处理过程; 以及形成高密度N型扩散区域的金属硅化物层。

公开(公告)号：US07560674B2

公开(公告)日：2009-07-14

申请号：US11486489

申请日：2006-07-13

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/00

CPC classification number: H01L27/14645 ,  H01L27/14601 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14689

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The present CMOS image sensor comprises: first, second, and third photo diodes and a plurality of transistors spaced at a predetermined distance in a semiconductor substrate; a diffusion blocking layer on substantially an entire surface of the substrate, including an opening therein exposing at least one of the photo diodes; an interlevel dielectric layer over the entire surface of the substrate, covering the diffusion blocking layer; first, second and third color filter layers over the interlevel dielectric layer, respectively corresponding to the first, second and third photo diodes, and a plurality of microlenses over the color filter layers, corresponding to each color filter layer.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 本CMOS图像传感器包括：第一，第二和第三光电二极管和在半导体衬底中以预定距离隔开的多个晶体管; 在基底的整个表面上的扩散阻挡层，包括其中暴露至少一个光电二极管的开口; 在衬底的整个表面上的层间电介质层，覆盖扩散阻挡层; 分别对应于第一，第二和第三光电二极管的层间电介质层上的第一，第二和第三滤色器层以及对应于每个滤色器层的滤色器层上的多个微透镜。

公开(公告)号：US07541630B2

公开(公告)日：2009-06-02

申请号：US11613224

申请日：2006-12-20

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/113 ,  H01L21/00

CPC classification number: H01L27/14687 ,  H01L27/14621

Abstract: A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a color filter layer comprising a first color filter, a second color filter, and a third color filter formed on the interlayer dielectric layer, wherein a portion of the first color filter and a portion of the second color filter are formed on one of the plurality of color filter isolation layers, and wherein a portion of the second color filter and a portion of the third color filter are formed on another of the plurality of color filter isolation layers; and microlenses formed on the color filter layer.

Abstract translation: 提供CMOS图像传感器及其制造方法。 在一个实施例中，CMOS图像传感器包括：形成在包括多个光电二极管和晶体管的半导体衬底上的层间介质层; 形成在所述层间绝缘层上的多个滤色器隔离层; 滤色器层，包括形成在所述层间电介质层上的第一滤色器，第二滤色器和第三滤色器，其中所述第一滤色器的一部分和所述第二滤色器的一部分形成在所述多个 的滤色器隔离层，并且其中所述第二滤色器的一部分和所述第三滤色器的一部分形成在所述多个滤色器隔离层中的另一个上; 和形成在滤色器层上的微透镜。