公开(公告)号：US20130034029A1

公开(公告)日：2013-02-07

申请号：US13565766

申请日：2012-08-02

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H04J3/00

CPC classification number: H04L1/1861 ,  H04L2001/0096

Abstract: A method for reporting Hybrid Automatic Repeat Request Acknowledgement (HARQ-ACK) is provided. The method is applicable to a time-division duplex (TDD) wireless communication system and includes the following steps: receiving downlink information from a base station with multiple serving cells, calculating a report number of each serving cell, which is a number of subframes of the corresponding serving cell whose acknowledgements have to be reported, and providing report information to the base station in an uplink subframe of a serving cell specified by the base station. The multiple serving cells use multiple uplink-downlink configurations. The report number of at least one of the serving cells is determined according to a downlink association set of the uplink subframe of the serving cell specified by the base station. The report information includes the acknowledgements that have to be reported by each of the serving cells.

Abstract translation: 提供了一种用于报告混合自动重传请求确认（HARQ-ACK）的方法。 该方法适用于时分双工（TDD）无线通信系统，包括以下步骤：从具有多个服务小区的基站接收下行链路信息，计算每个服务小区的报告号码，其为多个子帧 必须报告其确认的相应服务小区，并且在由基站指定的服务小区的上行链路子帧中向基站提供报告信息。 多个服务小区使用多个上行链路 - 下行链路配置。 根据由基站指定的服务小区的上行链路子帧的下行链路关联集来确定至少一个服务小区的报告号码。 报告信息包括必须由每个服务小区报告的确认。

公开(公告)号：US20110312150A1

公开(公告)日：2011-12-22

申请号：US13219568

申请日：2011-08-26

Applicant: Chien-Min Lee ,  Ming-Jeng Huang ,  Jen-Chi Chuang ,  Jia-Yo Lin ,  Min-Chih Wang

Inventor： Chien-Min Lee ,  Ming-Jeng Huang ,  Jen-Chi Chuang ,  Jia-Yo Lin ,  Min-Chih Wang

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.

Abstract translation: 提供一种相变存储器件，包括：衬底，设置在衬底上的第一电介质层，设置在第一电介质层中的第一电极，形成在第一电介质层上的第二电介质层，覆盖第一电极;加热电极 设置在所述第二电介质层中，与所述第一电极接触，设置在所述第二电介质层上方的与所述加热电极接触的相变材料层和设置在所述相变材料层上的第二电极。 在一个实施例中，加热电极包括接触第一电极的第一部分和与相变材料层接触的第二部分，加热电极的第二部分包括金属硅化物，加热电极的第一部分不包括金属硅化物。

公开(公告)号：US07626191B2

公开(公告)日：2009-12-01

申请号：US11435276

申请日：2006-05-17

Applicant: Te-Sheng Chao ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

Inventor： Te-Sheng Chao ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

IPC: H01L29/02

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract translation: 提供了具有间隔电极的横向相变存储器及其制造方法。 存储器通过以较低的电阻率连接导电电极和具有较高电阻率的间隔电极而形成，并且填充间隔电极之间的相变材料。 因此，可以减少相变材料与间隔电极接触的面积和相变材料的体积; 从而降低了相变存储器的编程电流和功耗。

公开(公告)号：US20090194759A1

公开(公告)日：2009-08-06

申请号：US12189087

申请日：2008-08-08

Applicant: Tsung-Shune Chin ,  Chin-Fu Kao ,  Ming-Jinn Tsai ,  Chien-Min Lee

Inventor： Tsung-Shune Chin ,  Chin-Fu Kao ,  Ming-Jinn Tsai ,  Chien-Min Lee

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

Abstract: A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5

Abstract translation: 公开了一种相变存储器件，包括衬底，衬底上的相变层，电连接相变层的第一侧的第一电极，电连接相变层的第二侧的第二电极，其中， 相变层主要由镓（Ga），锑（Sb）和碲（Te）和不可避免的杂质构成，其组成范围为GaxTeySbz，5

公开(公告)号：US07538043B2

公开(公告)日：2009-05-26

申请号：US11615909

申请日：2006-12-22

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H01L21/31

CPC classification number: H01L45/1675 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.

Abstract translation: 一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是 披露

公开(公告)号：US20090078926A1

公开(公告)日：2009-03-26

申请号：US12328745

申请日：2008-12-04

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H01L45/00

CPC classification number: H01L45/1675 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.

Abstract translation: 一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是 披露

公开(公告)号：US20080296554A1

公开(公告)日：2008-12-04

申请号：US11965557

申请日：2007-12-27

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/1691

Abstract: Phase change memory devices and fabrication methods thereof. A phase change memory device includes an array of phase change memory cells. Each phase change memory cell includes a selecting transistor disposed on a substrate. An upright electrode structure is electrically connected to the selecting transistor. An upright phase change memory layer is stacked on the upright electrode structure with a contact area therebetween, wherein the contact area serves as the location where phase transition takes place.

Abstract translation: 相变存储器件及其制造方法。 相变存储器件包括相变存储器单元的阵列。 每个相变存储单元包括设置在基板上的选择晶体管。 直立电极结构电连接到选择晶体管。 直立相变存储层层叠在直立电极结构上，其间具有接触区域，其中接触区域用作发生相变的位置。

公开(公告)号：US20080164504A1

公开(公告)日：2008-07-10

申请号：US11857396

申请日：2007-09-18

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih-Wei Chen ,  Ming-Jinn Tsai

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih-Wei Chen ,  Ming-Jinn Tsai

IPC: H01L47/00 ,  H01L21/76

CPC classification number: H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Abstract translation: 提供了相变存储器件。 相变存储器件包括衬底。 电极层位于基板上。 相变存储器结构在电极层上并电连接到电极层，其中相变存储器结构包括在电极层上的杯形加热电极。 绝缘层沿着覆盖杯状加热电极的一部分的第一方向位于杯状加热电极上。 电极结构沿着覆盖绝缘层和杯状加热电极的一部分的第二方向位于杯状加热电极上。 一对双间隔物位于电极结构的一对侧壁上，覆盖杯状加热电极的一部分，其中双间隔物包括相变材料间隔物和在相变材料间隔物的侧壁上的绝缘材料间隔物 。

公开(公告)号：US20070295949A1

公开(公告)日：2007-12-27

申请号：US11615909

申请日：2006-12-22

Applicant: Chien-Min Lee

Inventor： Chien-Min Lee

IPC: H01L47/00

CPC classification number: H01L45/1675 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.

Abstract translation: 一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是 披露

公开(公告)号：US20070291533A1

公开(公告)日：2007-12-20

申请号：US11758559

申请日：2007-06-05

Applicant: Yen Chuo ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Te-Sheng Chao ,  Yi-Chan Chen ,  Wei-Su Chen

Inventor： Yen Chuo ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Te-Sheng Chao ,  Yi-Chan Chen ,  Wei-Su Chen

IPC: G11C11/00

CPC classification number: H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691

Abstract: The invention provides a phase change memory device comprising a stacked structure disposed on a substrate. The stacked structure comprises a first electrode, a second electrode overlying the first electrode and an insulating layer interposed between the first and the second electrodes. A memory spacer is formed on part of the sidewall of the stacked structure to contact the first electrode, the insulating layer and the second electrode.

Abstract translation: 本发明提供一种相变存储器件，其包括设置在衬底上的层叠结构。 层叠结构包括第一电极，覆盖第一电极的第二电极和插在第一和第二电极之间的绝缘层。 在层叠结构的侧壁的一部分上形成有与第一电极，绝缘层和第二电极接触的记忆间隔物。