公开(公告)号：US20080279062A1

公开(公告)日：2008-11-13

申请号：US11930223

申请日：2007-10-31

申请人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

发明人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G11B5/00

CPC分类号： G11B9/02

摘要： Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

摘要翻译： 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括：电场读/写头，包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极，其中所述方法包括：向所述写入电极施加控制电压，其中所述控制 电压小于导致记录介质的极化的阈值电压，并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

公开(公告)号：US07319224B2

公开(公告)日：2008-01-15

申请号：US11219732

申请日：2005-09-07

申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G21K7/00

CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

摘要： Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

摘要翻译： 提供具有电阻尖端的半导体探针和制造半导体探针的方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂，并且蚀刻所述掩模层，使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

公开(公告)号：US20090034120A1

公开(公告)日：2009-02-05

申请号：US12038878

申请日：2008-02-28

申请人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  G11B9/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

公开(公告)号：US20060092817A1

公开(公告)日：2006-05-04

申请号：US11261612

申请日：2005-10-31

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park ,  Kyoung-Iock Baeck

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park ,  Kyoung-Iock Baeck

IPC分类号： G11B9/00

CPC分类号： B82Y10/00 ,  G11B9/02 ,  G11B9/1409 ,  G11B9/1472

摘要： Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

摘要翻译： 本发明提供一种铁电记录介质，其特征在于，具备由极化反转铁电材料形成的铁电体记录层和覆盖所述强电介质层的各向异性导电层，并且能够基于外部能量而变为导体或非导体。

公开(公告)号：US20060091437A1

公开(公告)日：2006-05-04

申请号：US11240570

申请日：2005-10-03

申请人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

发明人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

IPC分类号： H01L29/94

CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B9/02 ,  G11C11/22

摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

摘要翻译： 提供了具有探针阵列的电阻式存储器件及其制造方法。 电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。 制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

公开(公告)号：US20060057757A1

公开(公告)日：2006-03-16

申请号：US11212605

申请日：2005-08-29

申请人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/38

CPC分类号： G01Q70/10 ,  G01Q70/16

摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

摘要翻译： 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

公开(公告)号：US07933190B2

公开(公告)日：2011-04-26

申请号：US11930223

申请日：2007-10-31

申请人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

发明人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G11B7/00

CPC分类号： G11B9/02

摘要： Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

摘要翻译： 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括：电场读/写头，包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极，其中所述方法包括：向所述写入电极施加控制电压，其中所述控制 电压小于导致记录介质的极化的阈值电压，并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

公开(公告)号：US07808025B2

公开(公告)日：2010-10-05

申请号：US11957511

申请日：2007-12-17

申请人： Hyoung-soo Ko ,  Chul-min Park ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dae-young Jeon

发明人： Hyoung-soo Ko ,  Chul-min Park ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dae-young Jeon

IPC分类号： G11B9/00 ,  G11B5/37

CPC分类号： G11B9/02 ,  G11B5/6082 ,  H01L29/78

摘要： An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)≧0.2.

摘要翻译： 提供电场读/写头，其制造方法和包括电场读/写头的信息存储装置。 电场读/写头包括：形成在基板中的电阻区域，包括面向记录介质的端面; 源极和漏极，分别形成在衬底中并设置在电阻区域的两侧; 以及在电阻区域上依次形成的绝缘层和写入电极，其中电阻区域的长度（1）与宽度（w）比（1 / w）满足（1 / w）≥0.2。

公开(公告)号：US07759954B2

公开(公告)日：2010-07-20

申请号：US11861417

申请日：2007-09-26

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G01R31/02

CPC分类号： G01Q60/30 ,  G01Q80/00 ,  H01C13/00 ,  Y10T29/49082

摘要： Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

摘要翻译： 提供了具有电阻尖端的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质，其中掺杂高的第一和第二半导体电极区 第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层，与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

公开(公告)号：US07759153B2

公开(公告)日：2010-07-20

申请号：US11872065

申请日：2007-10-15

申请人： Chul-min Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/331 ,  H01L21/8222

CPC分类号： G01Q60/30

摘要： A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

摘要翻译： 一种制造具有电场屏蔽的电场传感器的方法。 该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头，以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域 其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模，使形成在电阻区域上的电介质层通过金属层曝光。