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    Ferroelectric recording medium and writing method for the same
    2.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07889628B2

    公开(公告)日：2011-02-15

    申请号：US12128788

    申请日：2008-05-29

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B7/00

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head
    4.
    发明授权
    Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head 失效
    电场读/写头，其制造方法以及包括电场读/写头的信息存储装置

    公开(公告)号：US08107354B2

    公开(公告)日：2012-01-31

    申请号：US12038878

    申请日：2008-02-28

    申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

    发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

    IPC分类号： G11B5/187 ,  G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

    摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

    Semiconductor probe having wedge shape resistive tip and method of fabricating the same
    5.
    发明授权
    Semiconductor probe having wedge shape resistive tip and method of fabricating the same 有权
    具有楔形电阻尖端的半导体探针及其制造方法

    公开(公告)号：US07994499B2

    公开(公告)日：2011-08-09

    申请号：US11750404

    申请日：2007-05-18

    申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park

    发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park

    IPC分类号： H01L21/00

    CPC分类号： G01Q60/30 ,  G01Q60/40

    摘要： A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.

    摘要翻译： 提供具有楔形电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，具有掺杂有与第一杂质具有相反极性的低浓度第二杂质的电阻区域，并且具有掺杂高浓度的第一和第二半导体电极区域 的第二杂质在电阻尖端的两个侧面上。 探针还包括在其边缘部分具有电阻尖端的悬臂，并且电阻尖端的端部具有楔形。

    Resistive memory device having array of probes and method of manufacturing the resistive memory device
    6.
    发明授权
    Resistive memory device having array of probes and method of manufacturing the resistive memory device 失效
    具有探针阵列的电阻式存储器件和制造该阻性存储器件的方法

    公开(公告)号：US07687838B2

    公开(公告)日：2010-03-30

    申请号：US11240570

    申请日：2005-10-03

    申请人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

    发明人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

    IPC分类号： H01L21/66 ,  H01L21/00 ,  G11B9/00 ,  G11B3/00 ,  G11B11/00

    CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B9/02 ,  G11C11/22

    摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

    摘要翻译： 提供了具有探针阵列的电阻式存储器件及其制造方法。 电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。 制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

    Ferroelectric recording medium and writing method for the same
    7.
    发明申请
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US20060175644A1

    公开(公告)日：2006-08-10

    申请号：US11348485

    申请日：2006-02-07

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： H01L29/94

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Ferroelectric recording medium and writing method for the same
    8.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07820311B2

    公开(公告)日：2010-10-26

    申请号：US11348485

    申请日：2006-02-07

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B5/64

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。